NTD4963N
Power MOSFET
Features
30 V, 44 A, Single N−Channel, DPAK/IPAK
•
•
•
•
•
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Three Package Variations for Design Flexibility
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
http://onsemi.com
V
(BR)DSS
30 V
R
DS(ON)
MAX
9.6 mW @ 10 V
16 mW @ 4.5 V
D
I
D
MAX
44 A
Applications
•
CPU Power Delivery
•
DC−DC Converters
•
Recommended for High Side (Control)
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise stated)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current R
qJA
(Note 1)
Power Dissipation
R
qJA
(Note 1)
Continuous Drain
Current R
qJA
(Note 2)
Power Dissipation
R
qJA
(Note 2)
Continuous Drain
Current R
qJC
(Note 1)
Power Dissipation
R
qJC
(Note 1)
Pulsed Drain
Current
t
p
=10ms
Steady
State
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
A
= 25°C
T
A
= 85°C
T
A
= 25°C
T
C
= 25°C
T
C
= 85°C
T
C
= 25°C
T
A
= 25°C
T
A
= 25°C
P
D
I
DM
I
DmaxPkg
T
J
,
T
STG
I
S
dV/dt
EAS
P
D
I
D
P
D
ID
Symbol
V
DSS
V
GS
I
D
Value
30
±20
10.0
7.2
1.64
8.1
5.8
1.1
44
32
35.7
132
35
−55
to
+175
30
6.0
33.8
W
A
A
°C
A
V/ns
mJ
4
Drain
AYWW
49
63NG
W
A
W
A
1 2
Unit
V
V
A
4
G
S
N−CHANNEL MOSFET
4
4
3
1
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
3
CASE 369AC
CASE 369D
3 IPAK
IPAK
(Straight Lead) (Straight Lead
DPAK)
2 3
1
2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
AYWW
49
63NG
4
Drain
Current Limited by Package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse Drain−to−Source Avalanche
Energy (T
J
= 25°C, V
DD
= 50 V, V
GS
= 10 V,
I
L
= 26 A
pk
, L = 0.1 mH, R
G
= 25
W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
2
1 2 3
1 Drain 3
Gate Drain Source
Gate Source
1 2 3
Gate Drain Source
A
Y
WW
4963N
G
= Assembly Location
= Year
= Work Week
= Device Code
= Pb−Free Package
T
L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
©
Semiconductor Components Industries, LLC, 2013
October, 2013
−
Rev. 3
1
Publication Order Number:
NTD4963N/D
AYWW
49
63NG
NTD4963N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−TAB (Drain)
Junction−to−Ambient – Steady State (Note 3)
Junction−to−Ambient – Steady State (Note 4)
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.
Symbol
R
qJC
R
qJC−TAB
R
qJA
R
qJA
Value
4.1
3.5
77
118
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain Current
V
(BR)DSS
V
(BR)DSS
/
T
J
I
DSS
I
GSS
V
GS(TH)
V
GS(TH)
/T
J
R
DS(on)
V
GS
= 10 V
V
GS
= 4.5 V
Forward Transconductance
g
FS
C
ISS
C
OSS
C
RSS
Q
G(TOT)
Q
G(TH)
Q
GS
Q
GD
Q
G(TOT)
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 4.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
V
GS
= 10 V, V
DS
= 15 V, I
D
= 30 A
V
GS
= 4.5 V, V
DS
= 15 V, I
D
= 30 A
V
GS
= 0 V, f = 1.0 MHz, V
DS
= 12 V
I
D
= 30 A
I
D
= 15 A
I
D
= 30 A
I
D
= 15 A
V
DS
= 1.5 V, I
D
= 30 A
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
12
20
14
3
ns
1035
220
115
8.1
1.2
3.5
3.5
16.2
nC
nC
pF
V
GS
= 0 V,
V
DS
= 24 V
T
J
= 25°C
T
J
= 125°C
V
GS
= 0 V, I
D
= 250
mA
30
25
1.0
10
±100
V
mV/°C
mA
nA
Symbol
Test Condition
Min
Typ
Max
Unit
Gate−to−Source Leakage Current
ON CHARACTERISTICS
(Note 5)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
Drain−to−Source On Resistance
V
DS
= 0 V, V
GS
=
±20
V
V
GS
= V
DS
, I
D
= 250
mA
1.45
5
8.2
8.2
13.6
13.6
40
2.5
V
mV/°C
9.6
mW
16
S
5. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
6. Switching characteristics are independent of operating junction temperatures.
7. Assume terminal length of 110 mils.
http://onsemi.com
2
NTD4963N
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise specified)
Parameter
SWITCHING CHARACTERISTICS
(Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
V
SD
t
RR
t
a
t
b
Q
RR
L
S
L
D
L
D
L
G
R
G
T
A
= 25°C
V
GS
= 0 V, dIS/dt = 100 A/ms,
I
S
= 30 A
V
GS
= 0 V,
I
S
= 30 A
T
J
= 25°C
T
J
= 125°C
0.96
0.83
17
9
8
6
nC
ns
1.2
V
t
d(ON)
t
r
t
d(OFF)
t
f
V
GS
= 11.5 V, V
DS
= 15 V,
I
D
= 15 A, R
G
= 3.0
W
7.0
17
20
2
ns
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
PACKAGE PARASITIC VALUES
Source Inductance (Note 7)
Drain Inductance, DPAK
Drain Inductance, IPAK (Note 7)
Gate Inductance (Note 7)
Gate Resistance
2.49
0.0164
1.88
3.46
1.0
nH
W
5. Pulse Test: pulse width
v
300
ms,
duty cycle
v
2%.
6. Switching characteristics are independent of operating junction temperatures.
7. Assume terminal length of 110 mils.
ORDERING INFORMATION
Device
NTD4963NT4G
NTD4963N−1G
NTD4963N−35G
Package
DPAK
(Pb−Free, Halide−Free)
IPAK
(Pb−Free, Halide−Free)
IPAK Trimmed Lead
(Pb−Free, Halide−Free)
Shipping
†
2500 / Tape & Reel
75 Units / Rail
75 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
3
NTD4963N
TYPICAL PERFORMANCE CURVES
60
50
40
30
20
10
0
60
V
GS
= 4.4 V
I
D
, DRAIN CURRENT (A)
4.2 V
4.0 V
3.8 V
3.6 V
3.4 V
3.2 V
2.8 V
0
1
2
3
4
5
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
50
40
30
20
10
0
T
J
= 25°C
V
DS
= 10 V
4.6 V thru 10 V
T
J
= 25°C
I
D
, DRAIN CURRENT (A)
T
J
= 125°C
1
1.5
2
2.5
3
T
J
=
−55°C
3.5
4
4.5
5
5.5
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
2E−02
1.9E−02
1.8E−02
1.7E−02
1.6E−02
1.5E−02
1.4E−02
1.3E−02
1.2E−02
1.1E−02
1.0E−02
9E−03
8E−03
7E−03
6E−03
5E−03
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
20E−03
Figure 2. Transfer Characteristics
I
D
= 30 A
T
J
= 25°C
T
J
= 25°C
V
GS
= 4.5 V
15E−03
10E−03
V
GS
= 10 V
5E−03
3
4
5
6
7
8
9
10
0E+00
10
15
20
25
30
35
40
45
50
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
1.8
1.6
1.4
1.2
1.0
0.8
0.6
−50
I
D
= 30 A
V
GS
= 10 V
10,000
1,000
I
DSS
, LEAKAGE (nA)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
V
GS
= 0 V
T
J
= 150°C
T
J
= 125°C
100
10
T
J
= 25°C
1
0.1
−25
0
25
50
75
100
125
150
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
4
NTD4963N
TYPICAL PERFORMANCE CURVES
1200
1000
C, CAPACITANCE (pF)
800
600
400
200
0
C
rss
0
5
10
15
20
25
30
10
9
8
7
6
5
4
3
2
1
0
0
2
I
D
= 30 A
T
J
= 25°C
V
DD
= 15 V
V
GS
= 30 A
10
4
6
12
14
8
Q
G
, TOTAL GATE CHARGE (nC)
16
18
Q
gs
Q
gd
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
C
iss
V
GS
= 0 V
T
J
= 25°C
Q
T
C
oss
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
1000
IS, SOURCE CURRENT (A)
V
DD
= 15 V
I
D
= 15 A
V
GS
= 11.5 V
t, TIME (ns)
100
t
d(off)
t
r
10
30
Figure 8. Gate−to−Source and Drain−to−Source
Voltage vs. Total Charge
V
GS
= 0 V
25
T
J
= 25°C
20
15
10
5
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
t
d(on)
t
f
1
1
10
R
G
, GATE RESISTANCE (W)
100
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
V
GS
= 30 V
Single Pulse
T
C
= 25°C
E
AS
, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
1000
I D, DRAIN CURRENT (A)
100
10
1
0.1
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
35
Figure 10. Diode Forward Voltage vs. Current
I
D
= 26 A
30
25
20
15
10
5
0
25
50
75
150
100
125
T
J
, STARTING JUNCTION TEMPERATURE (°C)
10
ms
100
ms
1 ms
10 ms
dc
100
0.01
10
1
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
