NTD4302
Power MOSFET
Features
68 A, 30 V, N−Channel DPAK
•
•
•
•
•
•
•
•
Ultra Low R
DS(on)
Higher Efficiency Extending Battery Life
Logic Level Gate Drive
Diode Exhibits High Speed, Soft Recovery
Avalanche Energy Specified
I
DSS
Specified at Elevated Temperature
DPAK Mounting Information Provided
These Devices are Pb−Free and are RoHS Compliant
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V
(BR)DSS
30 V
R
DS(on)
TYP
7.8 mW @ 10 V
N−Channel
D
I
D
MAX
68 A
Applications
•
DC−DC Converters
•
Low Voltage Motor Control
•
Power Management in Portable and Battery Powered Products:
i.e., Computers, Printers, Cellular and Cordless Telephones,
and PCMCIA Cards
Rating
Drain−to−Source Voltage
Gate−to−Source Voltage
−
Continuous
Thermal Resistance
−
Junction−to−Case
Total Power Dissipation @ T
C
= 25°C
Continuous Drain Current @ T
C
= 25°C (Note 4)
Continuous Drain Current @ T
C
= 100°C
Thermal Resistance
−
Junction−to−Ambient
(Note 2)
Total Power Dissipation @ T
A
= 25°C
Continuous Drain Current @ T
A
= 25°C
Continuous Drain Current @ T
A
= 100°C
Pulsed Drain Current (Note 3)
Thermal Resistance
−
Junction−to−Ambient
(Note 1)
Total Power Dissipation @ T
A
= 25°C
Continuous Drain Current @ T
A
= 25°C
Continuous Drain Current @ T
A
= 100°C
Pulsed Drain Current (Note 3)
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy
−
Starting T
J
= 25°C
(V
DD
= 30 Vdc, V
GS
= 10 Vdc,
Peak I
L
= 17 Apk, L = 5.0 mH, R
G
= 25
W)
Maximum Lead Temperature for Soldering
Purposes, 1/8 in from case for 10 seconds
Symbol
V
DSS
V
GS
R
qJC
P
D
I
D
I
D
R
qJA
P
D
I
D
I
D
I
DM
R
qJA
P
D
I
D
I
D
I
DM
T
J
, T
stg
E
AS
Value
30
±20
1.65
75
68
43
67
1.87
11.3
7.1
36
120
1.04
8.4
5.3
28
−55
to
150
722
G
S
MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
Unit
Vdc
Vdc
°C/W
W
A
A
°C/W
W
A
A
A
°C/W
W
A
A
A
°C
mJ
1
2
1 2
4
Drain
YWW
T
4302G
4
Drain
DPAK
CASE 369D
(Straight Lead)
STYLE 2
3
1 2 3
Gate Drain Source
Y
WW
T4302
G
= Year
= Work Week
= Device Code
= Pb−Free Package
YWW
T
4302G
4
DPAK
CASE 369C
(Surface Mount)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
3
2
1
3
Drain
Gate
Source
4
T
L
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. When surface mounted to an FR4 board using 0.5 sq. in. drain pad size.
3. Pulse Test: Pulse Width = 300
ms,
Duty Cycle = 2%.
4. Current Limited by Internal Lead Wires.
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 5 of this data sheet.
©
Semiconductor Components Industries, LLC, 2010
October, 2010
−
Rev. 8
1
Publication Order Number:
NTD4302/D
NTD4302
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 250
mA)
Positive Temperature Coefficient
Zero Gate Voltage Drain Current
(V
GS
= 0 Vdc, V
DS
= 30 Vdc, T
J
= 25°C)
(V
GS
= 0 Vdc, V
DS
= 30 Vdc, T
J
= 125°C)
Gate−Body Leakage Current (V
GS
=
±20
Vdc, V
DS
= 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
(V
DS
= V
GS
, I
D
= 250
mAdc)
Negative Temperature Coefficient
Static Drain−Source On−State Resistance
(V
GS
= 10 Vdc, I
D
= 20 Adc)
(V
GS
= 10 Vdc, I
D
= 10 Adc)
(V
GS
= 4.5 Vdc, I
D
= 5.0 Adc)
Forward Transconductance (V
DS
= 15 Vdc, I
D
= 10 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
(V
DD
= 24 Vdc, I
D
= 20 Adc,
V
GS
= 10 Vdc,
R
G
= 2.5
W)
(V
DD
= 25 Vdc, I
D
= 1.0 Adc,
V
GS
= 10 Vdc,
R
G
= 2.5
W)
(V
DD
= 25 Vdc, I
D
= 1.0 Adc,
V
GS
= 10 Vdc,
R
G
= 6.0
W)
(V
DS
= 24 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
t
d(on)
t
r
t
d(off)
t
f
Q
T
Q
gs
(Q1)
Q
gd
(Q2)
V
SD
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
2050
640
225
11
15
85
55
11
13
55
40
15
25
40
58
55
5.5
15
2400
800
310
20
25
130
90
20
20
90
75
−
−
−
−
80
−
−
Vdc
−
−
−
−
−
−
−
0.75
0.90
0.65
39
20
19
0.043
1.0
−
−
65
−
−
−
mC
ns
nC
ns
ns
ns
pF
V
GS(th)
Vdc
1.0
−
−
−
−
−
1.9
−3.8
0.0078
0.0078
0.010
20
3.0
−
0.010
0.010
0.013
−
W
V
(BR)DSS
Vdc
30
−
−
−
−
−
25
−
−
−
−
−
1.0
10
±100
mV/°C
mAdc
Symbol
Min
Typ
Max
Unit
I
DSS
I
GSS
nAdc
R
DS(on)
gFS
Mhos
SWITCHING CHARACTERISTICS
(Note 6)
(V
DS
= 24 Vdc, I
D
= 2.0 Adc,
V
GS
= 10 Vdc)
BODY−DRAIN DIODE RATINGS
(Note 5)
Diode Forward On−Voltage
(I
S
= 2.3 Adc, V
GS
= 0 Vdc)
(I
S
= 20 Adc, V
GS
= 0 Vdc)
(I
S
= 2.3 Adc, V
GS
= 0 Vdc, T
J
= 125°C)
Reverse Recovery Time
(I
S
= 2.3 Adc, V
GS
= 0 Vdc,
dI
S
/dt = 100 A/ms)
t
rr
t
a
t
b
Q
rr
Reverse Recovery Stored Charge
5. Indicates Pulse Test: Pulse Width = 300
msec
max, Duty Cycle
≤
2%.
6. Switching characteristics are independent of operating junction temperature.
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2
NTD4302
TYPICAL CHARACTERISTICS
50
I
D
, DRAIN CURRENT (AMPS)
40
30
20
10
0
V
GS
= 4 V
V
GS
= 4.4 V
V
GS
= 4.6 V
V
GS
= 5 V
V
GS
= 7 V
V
GS
= 10 V
V
GS
= 2.8 V
0
0.5
1
1.5
2
V
GS
= 3.4 V
V
GS
= 3.2 V
V
GS
= 3.0 V
2.5
3
T
J
= 25°C
V
GS
= 3.8 V
I
D
, DRAIN CURRENT (AMPS)
60
V
DS
> = 10 V
50
40
30
20
10
0
T
J
= 25°C
T
J
= 100°C
T
J
=
−55°C
2
3
4
5
6
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics
0.1
I
D
= 10 A
T
J
= 25°C
0.015
T
J
= 25°C
V
GS
= 4.5 V
0.075
0.01
0.05
0.005
V
GS
= 10 V
0.025
0
0
2
4
6
8
10
0.00E+00
0
1.00E+01
2.00E+01
3.00E+01
4.00E+01
5.00E+01
6.00E+01
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs.
Gate−To−Source Voltage
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
1.6
10000
Figure 4. On−Resistance vs. Drain Current
and Gate Voltage
I
D
= 18.5 A
V
GS
= 10 V
V
GS
= 0 V
T
J
= 150°C
1.4
1.2
1
I
DSS
, LEAKAGE (nA)
1000
100
T
J
= 100°C
0.8
0.6
−50
10
−25
0
25
50
75
100
125
150
1
5
10
15
20
25
30
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
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3
Figure 6. Drain−To−Source Leakage
Current vs. Voltage
NTD4302
TYPICAL CHARACTERISTICS
V
DS
, DRAIN−TO−SOURCE− VOLTAGE (V)
1
V
DS
= 0 V
5000
C, CAPACITANCE (pF)
C
iss
4000
3000
2000
C
rss
V
GS
= 0 V
T
J
= 25°C
V
GS
, GATE−TO−SOURCE− VOLTAGE (V)
6000
12.5
10
7.5
V
GS
5
2.5
0
I
D
= 2 A
T
J
= 25°C
0
10
20
30
40
50
Q
g
, TOTAL GATE CHARGE (nC)
Q
1
Q
2
Q
T
V
D
30
25
20
15
10
0
60
C
iss
1000
0
10
C
rss
V
GS
0 V
DS
10
C
oss
20
30
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
1000
I
S
, SOURCE CURRENT (AMPS)
V
DD
= 24 V
I
D
= 18.5 A
V
GS
= 10 V
t, TIME (ns)
25
20
15
10
5
0
0.5
V
GS
= 0 V
T
J
= 25°C
100
t
f
t
d(off)
t
r
t
d(on)
1
10
R
G
, GATE RESISTANCE (W)
100
10
0.6
0.7
0.8
0.9
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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4
NTD4302
TYPICAL CHARACTERISTICS
100
ID , DRAIN CURRENT (AMPS)
100
ms
di/dt
V
GS
= 10 V
SINGLE PULSE
T
C
= 25°C
1 ms
I
S
t
rr
t
a
10 ms
dc
t
p
I
S
10
100
0.25 I
S
t
b
TIME
10
R
DS(on)
LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1
0.1
1
V
DS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Diode Reverse Recovery Waveform
1000
Rthja(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE
DUTY CYCLE
100
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
(pk)
t
1
SINGLE PULSE
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
t, TIME (seconds)
1E+00
1E+01
1E+02
1E+03
t
2
DUTY CYCLE, D = t
1
/t
2
MOUNTED TO MINIMUM RECOMMENDED FOOTPRINT
10
1
0.1
R
qJA
(t) = r(t) R
qJA
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
A
= P
(pk)
R
qJA
(t)
Figure 13. Thermal Response
−
Various Duty Cycles
ORDERING INFORMATION
Device
NTD4302G
NTD4302−1G
NTD4302T4G
Package Type
DPAK
DPAK−3
DPAK
Package
369C
(Pb−Free)
369D
(Pb−Free)
369C
(Pb−Free)
Shipping
†
75 Units / Rail
75 Units / Rail
2500 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
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