NT5117405J
4,194,304-word X 4-bit
Dynamic RAM : Fast Page Mode with EDO
NT 511740C5J
Data Sheet
1
NANYA TECHNOLOGY CORP.
reserves the right to change products and specifications without notice.
©
NANYA TECHNOLOGY CORP
NT5117405J
4,194,304-word X 4-bit
Dynamic RAM : Fast Page Mode with EDO
TABLE OF CONTENTS
1. Description.............................................................................................3
2. Features.................................................................................................3
3. Product Family........................................................................................3
4. Pin Configuration....................................................................................4
5. Block Diagram........................................................................................5
6. Electrical Characteristics.......................................................................6
7. DC Characteristics.................................................................................7
8. AC Characteristics.................................................................................8~11
9. DRAM AC Timing Waveforms..............................................................12~18
2
NANYA TECHNOLOGY CORP.
reserves the right to change products and specifications without notice.
©
NANYA TECHNOLOGY CORP
NT5117405J
4,194,304-word X 4-bit
Dynamic RAM : Fast Page Mode with EDO
1.
DESCRIPTION
The NT511740C5J is a 4,194,304-word x 4-bit dynamic RAM fabricated in NTC’s CMOS silicon
gate technology. The NT511740C5J achieves high integration , high-speed operation , and low-
power consumption due to quadruple polysilicon double metal CMOS. The NT511740C5J is
available in a 26/24-pin plastic SOJ.
2. FEATURES
l
l
l
l
l
l
l
l
l
4,194,304-word x 4-bit configuration
Single 5V power supply,+/-10% tolerance
Input :TTL compatible , low input capacitance
Output :TTL compatible , 3-state
Refresh :2048 cycles/32 ms
Fast page mode with EDO, read modify write capability
/CAS before /RAS refresh, hidden refresh, /RAS-only refresh capability
Multi-bit test mode capability
Package options:
26/24-Pin 300 mil plastic SOJ (SOJ26/24-P300)
3. PRO D UCT FAM ILY
Access Tim e (M ax.)
Fam ily
NT511740C5J-50
NT511740C5J-60
NT511740C5J-70
t
RA C
t
A A
50ns 25ns
60 ns 30 ns
70 ns 35 ns
t
CA C
13ns
15 ns
20 ns
t
O EA
13ns
15 ns
20 ns
(M in.)
84ns
104 ns
124 ns
Operation(M ax.) Standby(M ax.)
660m W
605m W
5.5 m W
550 m W
C ycle Time
Power Dissipation
(Product:NT511740C5J-XX)
XX indicates speed rank.
3
NANYA TECHNOLOGY CORP.
reserves the right to change products and specifications without notice.
©
NANYA TECHNOLOGY CORP
NT5117405J
4,194,304-word X 4-bit
Dynamic RAM : Fast Page Mode with EDO
4. PIN CONFIGURATION (TOPVIEW)
Vcc
DQ1
DQ2
WE
RAS
NC
1
2
3
4
5
6
26
25
24
23
22
21
Vss
DQ4
DQ3
CAS
OE
A9
A10
A0
A1
A2
A3
Vcc
8
9
10
11
12
13
19
18
17
16
15
14
A8
A7
A6
A5
A4
Vss
26/24-Pin Plastic SOJ
Pin Name
A0-A10
RAS
CAS
DQ1-DQ4
OE
WE
Vcc
Vss
NC
Function
Adress input
Row Adress Strobe
Column Adress Strobe
Data Input/Data Output
Output Enable
Write Enable
Power Supply (5v)
Ground(0V)
No Connection
Note:The same power supply voltage must be provided to every Vcc pin , and the same GND voltage
level must be provided to every Vss pin.
4
NANYA TECHNOLOGY CORP.
reserves the right to change products and specifications without notice.
©
NANYA TECHNOLOGY CORP
NT5117405J
4,194,304-word X 4-bit
Dynamic RAM : Fast Page Mode with EDO
5. BLOCK DIAGRAM
RAS
CAS
Timing
Generator
Timing
Generator
11
Column
Address
Buffer
11
Column
Decoders
Write
Clock
Generator
WE
OE
4
A0-A10
Internal
Address
Counter
Output
Buffers
4
Refresh
Control Clock
Sense
Amplifiers
4
I/O
Selector
4
4
DQ1-DQ4
Input
Buffers
4
11
Row
Address
Buffer
11
Row
Decoders
Word
Drivers
Memory
Cells
V
CC
On Chip
V
BB
Generator
On Chip
IV
CC
Generator
V
SS
5
NANYA TECHNOLOGY CORP.
reserves the right to change products and specifications without notice.
©
NANYA TECHNOLOGY CORP
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