NTAG213/215/216
NFC Forum Type 2 Tag compliant IC with 144/504/888 bytes
user memory
Rev. 3.0 — 24 July 2013
265330
Product data sheet
COMPANY PUBLIC
1. General description
NTAG213, NTAG215 and NTAG216 have been developed by NXP Semiconductors as
standard NFC tag ICs to be used in mass market applications such as retail, gaming and
consumer electronics, in combination with NFC devices or NFC compliant Proximity
Coupling Devices. NTAG213, NTAG215 and NTAG216 (from now on, generally called
NTAG21x) are designed to fully comply to NFC Forum Type 2 Tag (Ref.
2)
and
ISO/IEC14443 Type A (Ref.
1)
specifications.
Target applications include Out-of-Home and print media smart advertisement, SoLoMo
applications, product authentication, NFC shelf labels, mobile companion tags.
Target use cases include Out-of-Home smart advertisement, product authentication,
mobile companion tags, Bluetooth or Wi-Fi pairing, electronic shelf labels and business
cards. NTAG21x memory can also be segmented to implement multiple applications at
the same time.
Thanks to the high input capacitance, NTAG21x tag ICs are particularly tailored for
applications requiring small footprints, without compromise on performance. Small NFC
tags can be more easily embedded into e.g. product labels or electronic devices.
The mechanical and electrical specifications of NTAG21x are tailored to meet the
requirements of inlay and tag manufacturers.
1.1 Contactless energy and data transfer
Communication to NTAG21x can be established only when the IC is connected to an
antenna. Form and specification of the coil is out of scope of this document.
When NTAG21x is positioned in the RF field, the high speed RF communication interface
allows the transmission of the data with a baud rate of 106 kbit/s.
NXP Semiconductors
NTAG213/215/216
NFC Forum T2T compliant IC with 144/504/888 bytes user memory
NTAG IC
ENERGY
NFC
ENABLED DEVICE
NFC TAG
DATA
001aao403
Fig 1.
Contactless system
1.2 Simple deployment and user convenience
NTAG21x offers specific features designed to improve integration and user convenience:
•
The fast read capability allows to scan the complete NDEF message with only one
FAST_READ command, thus reducing the overhead in high throughput production
environments
•
The improved RF performance allows for more flexibility in the choice of shape,
dimension and materials
•
The option for 75
m
IC thickness enables the manufacturing of ultrathin tags, for a
more convenient integration in e.g. magazines or gaming cards.
1.3 Security
•
•
•
•
•
Manufacturer programmed 7-byte UID for each device
Pre-programmed Capability container with one time programmable bits
Field programmable read-only locking function
ECC based originality signature
32-bit password protection to prevent unauthorized memory operations
1.4 NFC Forum Tag 2 Type compliance
NTAG21x IC provides full compliance to the NFC Forum Tag 2 Type technical
specification (see
Ref. 2)
and enables NDEF data structure configurations (see
Ref. 3).
1.5 Anticollision
An intelligent anticollision function allows to operate more than one tag in the field
simultaneously. The anticollision algorithm selects each tag individually and ensures that
the execution of a transaction with a selected tag is performed correctly without
interference from another tag in the field.
NTAG213_215_216
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.0 — 24 July 2013
265330
2 of 58
NXP Semiconductors
NTAG213/215/216
NFC Forum T2T compliant IC with 144/504/888 bytes user memory
2. Features and benefits
Contactless transmission of data and supply energy
Operating frequency of 13.56 MHz
Data transfer of 106 kbit/s
Data integrity of 16-bit CRC, parity, bit coding, bit counting
Operating distance up to 100 mm (depending on various parameters as e.g. field
strength and antenna geometry)
7-byte serial number (cascade level 2 according to ISO/IEC 14443-3)
UID ASCII mirror for automatic serialization of NDEF messages
Automatic NFC counter triggered at read command
NFC counter ASCII mirror for automatic adding the NFC counter value to the NDEF
message
ECC based originality signature
Fast read command
True anticollision
50 pF input capacitance
2.1 EEPROM
180, 540 or 924 bytes organized in 45, 135 or 231 pages with 4 bytes per page
144, 504 or 888 bytes freely available user Read/Write area (36, 126 or 222 pages)
4 bytes initialized capability container with one time programmable access bits
Field programmable read-only locking function per page for the first 16 pages
Field programmable read-only locking function above the first 16 pages per double
page for NTAG213 or per 16 pages for NTAG215 and NTAG216
Configurable password protection with optional limit of unsuccessful attempts
Anti-tearing support for capability container (CC) and lock bits
ECC supported originality check
Data retention time of 10 years
Write endurance 100.000 cycles
3. Applications
NTAG213_215_216
Smart advertisement
Goods and device authentication
Call request
SMS
Call to action
Voucher and coupons
Bluetooth or Wi-Fi pairing
Connection handover
Product authentication
Mobile companion tags
Electronic shelf labels
Business cards
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.0 — 24 July 2013
265330
3 of 58
NXP Semiconductors
NTAG213/215/216
NFC Forum T2T compliant IC with 144/504/888 bytes user memory
4. Quick reference data
Table 1.
Symbol
C
i
f
i
t
ret
N
endu(W)
[1]
Quick reference data
Parameter
input capacitance
input frequency
retention time
write endurance
T
amb
= 22
C
T
amb
= 22
C
Conditions
[1]
Min
-
-
10
100000
Typ
50.0
13.56
-
-
Max
-
-
-
-
Unit
pF
MHz
years
cycles
EEPROM characteristics
LCR meter, T
amb
= 22
C,
f
i
= 13.56 MHz, 2 V RMS.
5. Ordering information
Table 2.
Ordering information
Package
Name
NT2H1311G0DUF
FFC Bump
Description
8 inch wafer, 75
m
thickness, on film frame carrier, electronic fail die
marking according to SECS-II format), Au bumps,
144 bytes user memory, 50 pF input capacitance
8 inch wafer, 120
m
thickness, on film frame carrier, electronic fail die
marking according to SECS-II format), Au bumps,
144 bytes user memory, 50 pF input capacitance
8 inch wafer, 75
m
thickness, on film frame carrier, electronic fail die
marking according to SECS-II format), Au bumps,
504 bytes user memory, 50 pF input capacitance
8 inch wafer, 120
m
thickness, on film frame carrier, electronic fail die
marking according to SECS-II format), Au bumps,
504 bytes user memory, 50 pF input capacitance
8 inch wafer, 75
m
thickness, on film frame carrier, electronic fail die
marking according to SECS-II format), Au bumps,
888 bytes user memory, 50 pF input capacitance
8 inch wafer, 120
m
thickness, on film frame carrier, electronic fail die
marking according to SECS-II format), Au bumps,
888 bytes user memory, 50 pF input capacitance
Version
-
Type number
NT2H1311G0DUD
FFC Bump
-
NT2H1511G0DUF
FFC Bump
-
NT2H1511G0DUD
FFC Bump
-
NT2H1611G0DUF
FFC Bump
-
NT2H1611G0DUD
FFC Bump
-
NTAG213_215_216
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.0 — 24 July 2013
265330
4 of 58
NXP Semiconductors
NTAG213/215/216
NFC Forum T2T compliant IC with 144/504/888 bytes user memory
6. Block diagram
DIGITAL CONTROL UNIT
antenna
RF-INTERFACE
ANTICOLLISION
EEPROM
INTERFACE
COMMAND
INTERPRETER
EEPROM
aaa-006979
Fig 2.
Block diagram of NTAG213/215/216
NTAG213_215_216
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved.
Product data sheet
COMPANY PUBLIC
Rev. 3.0 — 24 July 2013
265330
5 of 58
模拟电子
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
