Preliminary
Datasheet
RJE0601JPE
Silicon P Channel MOS FET Series
Power Switching
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
REJ03G1906-0200
Rev.2.00
Jun 29, 2010
Features
High endurance capability against to the short circuit.
Built-in the over temperature shut-down circuit.
Latch type shut down operation (need 0 voltage recovery).
Built-in the current limitation circuit.
Low on-resistance R
DS
: 22 m Typ, 27 m Max (V
GS
= –10 V)
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
D
G
1
2
3
Temperature
Sensing
Circuit
Gate Resistor
Current
Limitation
Circuit
Gate
Shut-down
Circuit
1. Gate
2. Drain
(Flange)
3. Source
Latch
Circuit
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
V
DSS
Gate to source voltage
V
GSS
Gate to source voltage
V
GSS
Drain current
I
D
Body-drain diode reverse drain current
I
DR
Avalanche current
I
AP Note 1
Avalanche energy
E
AR Note 2
Channel dissipation
Pch
Note 1
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Value at Tc = 25C
2. Tch = 25C, Rg
50
3. It provides by the current limitation lower bound value.
Ratings
–60
–16
2.5
–40
Note 3
–40
–15
964
50
150
–55 to +150
Unit
V
V
V
A
A
A
mJ
W
C
C
REJ03G1906-0200 Rev.2.00
Jun 29, 2010
Page 1 of 6
RJE0601JPE
Preliminary
Typical Operation Characteristics
(Ta = 25°C)
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Drain current
(Current limitation value)
Notes; 4. Pulse test
Symbol
V
IH
V
IL
I
IH1
I
IH2
I
IL
I
IH(sd)1
I
IH(sd)2
Tsd
Vop
I
D limt
Min
–3.5
—
—
—
—
—
—
—
–3.5
–40
Typ
—
—
—
—
—
–0.8
–0.35
175
—
–60
Max
—
–1.2
–100
–50
–1
—
—
—
–12
—
Unit
V
V
A
A
A
mA
mA
C
V
A
Test Conditions
Vi = –8 V, V
DS
= 0
Vi = –3.5 V, V
DS
= 0
Vi = –1.2 V, V
DS
= 0
Vi = –8 V, V
DS
= 0
Vi = –3.5 V, V
DS
= 0
Channel temperature
(dv/dt V
GS
500 V/ms)
V
GS
= –12 V, V
DS
= –10 V
Note 4
Electrical Characteristics
(Ta = 25°C)
Item
Drain current
Symbol
I
D1
I
D2
I
D3
V
(BR)DSS
V
(BR)GSS
V
(BR)GSS
I
GSS1
I
GSS2
I
GSS3
I
GSS4
I
GS(OP)1
I
GS(OP)2
I
DSS
V
GS(off)
|y
fs
|
R
DS(on)
R
DS(on)
Coss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
t
os1
Min
—
—
–40
–60
–16
2.5
—
—
—
—
—
—
—
–2.2
8.4
—
—
—
—
—
—
—
—
—
—
Typ
—
—
–60
—
—
—
—
—
—
—
–0.8
–0.35
—
—
27
26
22
860
12.6
12.5
3.7
2.2
–0.95
100
2.3
Max
–40
–10
—
—
—
—
–100
–50
–1
100
—
—
–10
–3.4
—
45
27
—
—
—
—
—
—
—
—
Unit
A
mA
A
V
V
V
A
A
A
A
mA
mA
A
V
S
m
m
pF
s
s
s
s
V
ns
ms
Test Conditions
V
GS
= –3.5 V, V
DS
= –10 V
V
GS
= –1.2 V, V
DS
= –10 V
V
GS
= –12 V, V
DS
= –10 V
Note 5
I
D
= –10 mA, V
GS
= 0
I
G
= –800
A,
V
DS
= 0
I
G
= 100
A,
V
DS
= 0
V
GS
= –8 V, V
DS
= 0
V
GS
= –3.5 V, V
DS
= 0
V
GS
= –1.2 V, V
DS
= 0
V
GS
= 2.4 V, V
DS
= 0
V
GS
= –8 V, V
DS
= 0
V
GS
= –3.5 V, V
DS
= 0
V
DS
= –60 V, V
GS
= 0
V
DS
= –10 V, I
D
= –1 mA
I
D
= –20 A, V
DS
= –10 V
Note 5
I
D
= –20 A, V
GS
= –6 V
Note 5
I
D
= –20 A, V
GS
= –10 V
Note 5
V
DS
= –10 V, V
GS
= 0, f = 1MHz
V
GS
= –10 V, I
D
= –20 A,
R
L
= 1.5
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Input current (shut down)
Zero gate voltage drain current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Output capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse
recovery time
Over load shut down
Note 6
operation time
I
F
= –40 A, V
GS
= 0
I
F
= –40 A, V
GS
= 0
di
F
/dt = 50 A/s
V
GS
= –5 V, V
DD
= –16 V
Notes: 5. Pulse test
6. Including the junction temperature rise of the over loaded condition.
REJ03G1906-0200 Rev.2.00
Jun 29, 2010
Page 2 of 6
RJE0601JPE
Preliminary
Main Characteristics
Power vs. Temperature Derating
80
−1000
Maximum Safe Operation Area
Ta = 25°C
Thermal shut down operation area
Channel Dissipation Pch (W)
Drain Current I
D
(A)
60
−100
1
m
s
40
−10
DC Operation
(Tc = 25°C)
Operation
in this area
is limited R
DS(on)
20
−1
PW = 10 ms
0
0
50
100
150
200
−0.1
−0.1
−1
−10
−100
Case Temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
−100
Pulse Test
−40
Typical Transfer Characteristics
V
DS
=
−10
V
Pulse Test
Drain Current I
D
(A)
Drain Current I
D
(A)
−10
V
−50
−8
V
−6
V
−30
−5.5
V
−5
V
−4.5
V
V
GS
=
−4
V
−20
Tc = 75°C
25°C
−25°C
−10
0
−5
−10
−0
0
−2
−4
−6
−8
−10
Drain to Source Voltage V
DS
(V)
Drain Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS(on)
(mV)
−2000
Pulse Test
Gate to Source Voltage V
GS
(V)
Static Drain to Source On State Resistance
vs. Drain Current
1000
Pulse Test
−1500
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
100
V
GS
=
−6
V
10
−10
V
−1000
−500
−5
A
I
D
=
−20
A
−10
A
0
−2
−4
−6
−8
−10
−12
1
−0.1
−1
−10
−100
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
REJ03G1906-0200 Rev.2.00
Jun 29, 2010
Page 3 of 6
RJE0601JPE
Static Drain to Source On State Resistance
vs. Temperature
Forward Transfer Admittance |y
fs
| (S)
50
Pulse Test
40
I
D
=
−20
A
−10
A
−5
A
100
Tc =
−25°C
10
25°C
1
75°C
Preliminary
Forward Transfer Admittance vs.
Drain Current
Static Drain to Source On State Resistance
R
DS(on)
(mΩ)
30
V
GS
=
−6
V
I
D
=
−20
A
−10
A,
−5
A
20
−10
V
10
−50
−25
0
25
50
75 100 125 150
0.1
−0.1
V
DS
=
−10
V
Pulse Test
−1
−10
−100
Case Temperature Tc (°C)
Drain Current I
D
(A)
Body-Drain Diode Reverse
Recovery Time
1000
Switching Characteristics
100
V
GS
=
−10
V, V
DD
=
−30
V
PW = 300
μs,
duty
≤
1 %
Reverse Recovery Time trr (ns)
Switching Time t (μs)
td(on)
10
tr
100
td(off)
10
−0.1
di / dt = 50 A /μs
V
GS
= 0, Ta = 25°C
−1
−10
−100
tf
1
−0.1
−1
−10
−100
Reverse Drain Current I
DR
(A)
Typical Capacitance vs.
Drain to Source Voltage
10000
Drain Current I
D
(A)
Reverse Drain Current vs.
Source to Drain Voltage
–40
Reverse Drain Current I
DR
(A)
V
GS
= 0
f = 1 MHz
Pulse Test
–30
–10 V
–20
–5 V
–10
V
GS
= 0 V
0
–0.5
–1.0
–1.5
Capacitance C (pF)
1000
Coss
100
−0
−10
−20
−30
−40
−50
−60
Drain to Source Voltage V
DS
(V)
Source to Drain Voltage V
SD
(V)
REJ03G1906-0200 Rev.2.00
Jun 29, 2010
Page 4 of 6
RJE0601JPE
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
Preliminary
Shutdown Case Temperature vs.
Gate to Source Voltage
Gate to Source Voltage V
GS
(V)
−12
−10
−8
−6
−4
−2
0
0.0001
Shutdown Case Temperature Tc (°C)
200
180
160
V
DD
=
−16
V
140
I
D
=
−5
A
dv/dt
V
GS
≥
500 V/ms
0
−2
−4
−6
−8
−10
120
100
0.001
0.01
0.1
Shutdown Time of Load-Short Test Pw (S)
Gate to Source Voltage V
GS
(V)
Normalized Transient Thermal Impedance
γ
s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
10
1
D=1
0.5
0.2
0.1
0.1
θch
- c(t) =
γs
(t) x
θch
- c
θch
- c = 2.5°C/W, Tc = 25°C
P
DM
0.02
0.01
o
1sh
D=
PW
T
PW
T
l se
t pu
0.01
0.00001
0.05
0.0001
0.001
0.01
0.1
1
10
Pulse Width PW (S)
Switching Time Test Circuit
Vin Monitor
D.U.T.
R
L
V
DD
= –30 V
Vout
td(on)
Vout
Monitor
Vin
10%
90%
90%
90%
Waveform
Vin
–10 V
50
Ω
10%
tr
td(off)
10%
tf
REJ03G1906-0200 Rev.2.00
Jun 29, 2010
Page 5 of 6
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