NLX2G66
Dual Bilateral Analog
Switch / Digital Multiplexer
The NLX2G66 is a dual single pole, single throw (SPST) analog
switch / digital multiplexer. This single supply voltage IC is designed
with a sub−micron CMOS technology to provide low propagation
delays (t
pd
) and ON resistance (R
ON
), while maintaining low power
dissipation. This bi−lateral switch can be used with either analog or
digital signals that may vary across the full power supply range from
V
CC
to GND.
Features
8
1
www.onsemi.com
MARKING
DIAGRAMS
UDFN8
MU SUFFIX
CASE 517BZ
XXM
G
•
•
•
•
•
•
•
•
Wide V
CC
Operating Range: 1.65 V to 5.5 V
OVT up to +5.5 V for Control Pin
R
ON
: Typically 5.5
W
at V
CC
= 4.5 V and I
S
= 32 mA
Rail−to−Rail Input/Output
High On−Off Output Voltage Ratio
High Degree of Linearity
Ultra−Small Pb−Free, Halide−Free, RoHS−Compliant Packages
ESD Performance: > 5000 V HBM, > 400 V MM
1
8
1
XX
M
G
UDFN8
MU SUFFIX
CASE 517CA
1
XXM
G
= Specific Device Code
= Date Code
= Pb−Free Package
WLCSP8
FC SUFFIX
CASE 567MR
XXXX
AYWW
Typical Applications
8
1
•
Cell Phones, PDAs, MP3 and other Portable Media Players
1A
1C
1B
A
= Assembly Location
Y
= Year
WW = Work Week
PIN ASSIGNMENTS
2A
2C
2B
1A
1
2
3
4
8
7
6
5
V
CC
1C
2B
2A
GND
2C
1B
1A
D1D2
C1C2
B1 B2
A1 A2
WLCSP8
(Bottom View)
2A
2B
1C
V
CC
1B
2C
GND
Figure 1. Analog Symbol
PIN ASSIGNMENTS
UDFN8
1
2
3
4
5
6
7
8
WLCSP8
A1
B1
C1
D1
D2
C2
B2
A2
Description
1A
1B
2C
GND
2A
2B
1C
V
CC
UDFN8
(Top View)
FUNCTION TABLE
Control Input (C)
L
H
Switch
OFF
ON
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
This document contains information on some products that are still under development.
ON Semiconductor reserves the right to change or discontinue these products without
notice.
©
Semiconductor Components Industries, LLC, 2016
1
May, 2016 − Rev. 5
Publication Order Number:
NLX2G66/D
NLX2G66
Table 1. MAXIMUM RATINGS
Symbol
V
CC
V
S
V
I
I
OK
I
IK
I
I/O
I
L
T
s
V
ESD
Positive DC Supply Voltage
Switch Input / Output Voltage
Digital Control Input Voltage
I/O port diode current
Control input diode current
Continuous DC Current Through Analog Switch
Latch−up Current, (Above V
CC
and below GND at 125°C)
Storage Temperature
ESD Withstand Voltage:
Human Body Model (HBM)
Machine Model (MM)
(Pins 1A, 1B, 2A and 2B)
(Pins 1C and 2C)
Rating
Value
−0.5 to +7.0
−0.5 to + V
CC
+ 0.5
−0.5 to +7.0
±50
−50
±100
±100
−65 to +150
≥
5000
> 400
Unit
V
V
V
mA
mA
mA
mA
°C
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
Table 2. RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
S
V
I
T
A
t
r
, t
f
Positive DC Supply Voltage
Switch Input / Output Voltage
Digital Control Input Voltage
Operating Temperature Range
Input Transition Rise or Fall Time
(ON/OFF Control Input)
V
CC
= < 3.0 V
V
CC
=
≥
3.0 V
(Pins 1A, 2A, 1B and 2B)
(Pins 1C and 2C)
Parameter
Min
1.65
GND
GND
−55
0
0
Max
5.5
V
CC
5.5
+125
20
10
Unit
V
V
V
°C
ns/V
Table 3. ELECTRICAL CHARACTERISTICS
Guaranteed Limit
255C
Symbol
V
IH
Parameter
High−Level Input Voltage, Control
Input
Condition
V
CC
1.65 to
1.95
2.3 to
5.5
V
IL
Low−Level Input Voltage, Control
Input
1.65 to
1.95
2.3 to
5.5
I
I
I
S(ON)
I
S(OFF)
Input Leakage Current, Control Input
−555 to 1255C
Min
V
CC
x
0.65
V
CC
x
0.7
V
CC
x
0.35
V
CC
x
0.30
V
Max
Unit
V
Min
Max
V
I
= V
CC
or GND
V
IS
= V
CC
or GND,
V
I
= V
IH
, V
OS
= Open
V
IS
= V
CC
and V
OS
=
GND, or V
IS
= GND and
V
OS
= V
CC
GND, V
I
= V
IL
,
V
I
= V
CC
or GND
V
I
= V
CC
– 0.6
5.5
5.5
5.5
±0.1
±0.1
±0.1
±1
±1
±1
mA
mA
mA
ON−State Switch Leakage Current
OFF−State Switch
Leakage Current
Quiescent Supply Current
Supply Current Change
Control Input Capacitance
Switch OFF Input / Output Capacitance
Switch ON Input / Output Capacitance
I
CC
ΔI
CC
C
I
C
I/O(Off)
C
I/O(On)
5.5
5.5
5
1.0
10
500
3.0
6.0
13
mA
mA
pF
pF
pF
See Figure 3
See Figure 4
5
5
www.onsemi.com
2
NLX2G66
Table 4. SWITCHING CHARACTERISTICS
Guaranteed Limit
−555 to 1255C
Symbol
t
PLH
, t
PHL
Parameter
Propagation Delay,
A to B, B to A
Condition
C
L
= 30 pF, R
L
= 1 kΩ
V
CC
1.8
2.5
C
L
= 50 pF, R
L
= 500
Ω
3.3
5.0
t
EN
(t
PZL
, t
PZH
)
Enable Time,
C to Analog Output (A or B)
C
L
= 50 pF, R
L
= 500
Ω
See Figure 6
1.8
2.5
3.3
5.0
t
DIS
(t
PLZl
, t
PHZ
)
Disable Time,
C to Analog Output (A or B)
C
L
= 50 pF, R
L
= 500
Ω
See Figure 6
1.8
2.5
3.3
5.0
Min
Max
6.5
3.3
2.5
2.2
10
6.5
5.5
4.9
9.0
7.2
6.5
6.0
ns
ns
Unit
ns
Table 5. ANALOG SWITCH CHARACTERISTICS
255C
Symbol
R
ON
Parameter
On−Resistance
Conditions
V
IS
= V
CC
or GND,
V
I
= V
IH
, See Figure 2
I
S
= 4 ma
I
S
= 8 ma
I
S
= 24 ma
I
S
= 32 ma
R
ON(peak)
Peak On−Resistance
V
IS
= GND to V
CC
; V
I
= V
IH
,
See Figure 2
I
S
= 4 ma
I
S
= 8 ma
I
S
= 24 ma
I
S
= 32 ma
DR
ON
On−Resistance
Mismatch between
Switches
V
IS
= GND to V
CC
; V
I
= V
IH
,
See Figure 2
I
S
= 4 ma
I
S
= 8 ma
I
S
= 24 ma
I
S
= 32 ma
BW
Bandwidth (f
−3dB
)
R
L
= 50
W,
C
L
= 5 pF,
f
IN
= Sine Wave
See Figure 8
V
CC
1.65
2.3
3.0
4.5
1.65
2.3
3.0
4.5
1.65
2.3
3.0
4.5
1.65
2.3
3.0
4.5
Typ
12
9
7.5
5.5
74.5
20
11.5
7.5
−555 to 1255C
Min
Max
30
20
15
13
220
75
25
17
8.0
5.0
3.0
2.0
> 270
> 270
> 270
> 270
MHz
W
W
Unit
W
www.onsemi.com
3
NLX2G66
Table 5. ANALOG SWITCH CHARACTERISTICS
(continued)
255C
Symbol
ISO
Off
Parameter
Off−Channel
Feedthrough
Isolation
Conditions
R
L
= 600
Ω,
C
L
= 50 pF,
f
IN
= 1 MHz Sine Wave
See Figure 9
V
CC
1.65
2.3
3.0
4.5
R
L
= 50
Ω,
C
L
= 5 pF,
f
IN
= 1 MHz Sine Wave
See Figure 9
1.65
2.3
3.0
4.5
XTalk
Crosstalk
Between Switches
R
L
= 600
Ω,
C
L
= 50 pF,
f
IN
= 1 MHz Sine Wave
See Figure 10
1.65
2.3
3.0
4.5
R
L
= 50
Ω,
C
L
= 5 pF,
f
IN
= 1 MHz Sine Wave
See Figure 10
1.65
2.3
3.0
4.5
Feedthrough Noise,
Control to Switch
R
L
= 600
Ω,
C
L
= 50 pF,
f
IN
= 1 MHz Square Wave, t
r
= t
f
= 2 ns,
See Figure 11
1.65
2.3
3.0
4.5
THD
Total Harmonic
Distortion
C
L
= 50 pF, R
L
= 50
Ω,
f
IN
= 600 Hz to 20 KHz Sine Wave,
See Figure 12
2.3
3.0
4.5
Typ
−70
−70
−70
−70
−60
−60
−60
−60
−100
−100
−100
−100
−90
−90
−90
−90
10
10
10
15
0.025
0.015
0.01
%
mV
pp
dB
Unit
dB
Table 6. POWER DISSIPATION CHARACTERISTICS
255C
Symbol
C
PD
Parameter
Power Dissipation
Capacitance
Conditions
f = 10 MHz
V
CC
1.65
2.3
3.0
4.5
Typ
8.0
8.9
9.6
10.9
Unit
pF
www.onsemi.com
4
NLX2G66
Table 7. DEVICE ORDERING INFORMATION
Device Order Number
NLX2G66DMUTAG
NLX2G66DMUTCG
NLX2G66MU3TCG
(In Development)
NLX2G66FCTAG
Package
UDFN8−0.5P, 1.95 mm x 1.0 mm
(Pb−Free)
UDFN8−0.5P, 1.95 mm x 1.0 mm
(Pb−Free)
UDFN8−0.35P, 1.45 mm x 1.0 mm
(Pb−Free)
WLCSP8, 1.888 mm x 0.888 mm
(Pb−Free)
Shipping
†
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
