SEMICONDUCTOR
NKT200A/NKH200A Series
Thyristor
/
Diode and Thyristor
/
Thyristor, 200A
(
New INT
-
A
-
PAK Power Modules
)
RoHS
RoHS
N
ell
High Power Products
24
23
23
2.8x0.8+0.1
34+2
-
New INT
-
A
-
PAK
12+1
-
2−Ø6.5
15+1
3-M6 SCREWS
FEATURES
•
High voltage
•
Electrically isolated by DBC ceramic
(
AI
2
O
3
)
• 3500
V
RMS
isolating voltage
36+2
-
80+1
94+1
•
High surge capability
•
Glass passivated chips
•
Modules uses high voltage power thyristor
/
diodes in two
basic configurations
•
Simple mounting
•
UL approved file E320098
•
Compliant to RoHS
•
Designed and qualified for multiple level
29+1
-
All dimensions in millimeters
NKT
+
~
-
~
NKH
+
-
APPLICATIONS
•
DC motor control and drives
•
Battery charges
•
Welders
•
Power converters
•
Lighting control
•
Heat and temperature control
~
+
-
0.8
9
7+0.5
•
Industrial standard package
K2 G2
K1 G1
~
+
-
K1G1
PRODUCT SUMMARY
I
T(AV)
200 A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
t
I
2
√
V
DRM
/ V
RRM
T
J
Range
Range
CHARACTERISTICS
85 ° C
85 ° C
50 Hz
60 Hz
50 Hz
60 Hz
VALUES
200
314
7200
7560
259
236
2592
400 to 1600
-40 to 125
kA
2
s
kA
2
√s
V
° C
A
UNITS
A
www.nellsemi.com
Page 1 of 4
SEMICONDUCTOR
NKT200A/NKH200A Series
RoHS
RoHS
N
ell
High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
04
NKT200
NKH200
08
12
14
16
V
RRM
/V
DRM
,
MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
400
800
1200
1400
1600
V
RSM
/V
DSM
,
MAXIMUM NON
-
REPETITIVE
PEAK REVERSE VOLTAGE
V
500
900
1300
1500
1700
30
I
RRM
/I
DRM
AT
125 °
C
mA
FORWARD CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle, on-state
non-repetitive surge current
SYMBOL
I
T(AV)
l
T(RMS)
I
TSM
TEST CONDITIONS
180° conduction, half sine wave ,50Hz
180° conduction, half sine wave ,50Hz ,T
C
= 85
°
C
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
√
for fusing
t
Maximum on-state voltage drop
Maximum forward voltage drop
Maximum holding current
Maximum latching current
2
t
I
√
VALUES
200
85
314
7200
UNITS
A
°C
A
No voltage
reapplied
7560
Sine half wave,
initial T
J
=
T
J
maximum
259
236
181
165
2592
1.7
V
1.4
40~150
mA
400
kA
2
√s
kA
2
s
100%V
RRM
reapplied
t = 0.1 ms to 10 ms, no voltage reapplied
I
TM
= 480A , T
J
= 25 ° C, 180° conduction
I
FM
= 480A, T
J
= 25 ° C, 180° conduction
Anode supply = 12 V initial I
T
= 30 A, T
J
= 25 ° C
Anode supply = 12 V resistive load = 1
Gate pulse: 10 V, 100 s, T
J
= 25 ° C
V
TM
V
FM
I
H
I
L
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
RMS isolation Voltage
Critical rate of rise of
off-state voltage
SYMBOL
I
RRM
,
I
DRM
V
ISO
dV/dt
T
J
= 125 ° C
50 Hz, circuit to base,
all terminals shorted
T
J
= T
J
maximum,
exponential to 67 % rated V
DRM
TEST CONDITIONS
VALUES
30
2500 (1min)
3500 (1s)
500
UNITS
mA
V
V/ s
www.nellsemi.com
Page 2 of 4
SEMICONDUCTOR
NKT200A/NKH200A Series
RoHS
RoHS
N
ell
High Power Products
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative
gate voltage
Maximum required DC
gate voltage to trigger
Maximum required DC
gate current to trigger
Maximum gate voltage
that will not trigger
Maximum gate current
that will not trigger
Maximum rate of rise of
turned-on current
SYMBOL
P
GM
P
G(AV)
I
GM
- V
GT
V
GT
T
J
= 25 ° C
I
GT
V
GD
T
J
= T
J
maximum, 66.7% V
DRM
applied
I
GD
dI/dt
T
J
= 25ºC
,I
GM
= 1.5A ,t
r
≤
0.5 µs
10
150
mA
A/ s
Anode supply = 12 V,
resistive load; R
a
= 1
30~150
mA
V
t
p
≤
5 ms, T
J
= T
J
maximum
TEST CONDITIONS
t
p
≤
5 ms, T
J
= T
J
maximum
f = 50 Hz, T
J
= T
J
maximum
VALUES
10
3
3
10
V
0.7~1.8
UNITS
W
A
0.25
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum storage
temperature range
Maximum thermal resistance,
junction to ca se per junction
Maximum thermal resistance,
case to heatsink per module
SYMBOL
T
J
T
Stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth , flat and greased
A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
Lubricated threads.
TEST CONDITIONS
VALUES
- 40 to 125
°C
- 40 to 150
0.14
° C/W
0.025
UNITS
Mounting
torque ± 10 %
IAP to heatsink , M6
busbar to IAP , M6
4 to 6
N.m
Approximate weight
220
7.05
g
oz.
Case style
New INT-A-PAK
ORDERING INFORMATION TABLE
Device code
NKT
1
200
2
/
16
3
A
4
1
2
3
4
-
-
-
-
Module type: NKT for (Thyristor + Thyristor) module
NKH for (Thyristor + Diode) module
Current rating
:
I
T
(
AV
)
Voltage code x
100 =
V
RRM
Assembly type,”A” for soldering type
Page 3 of 4
www.nellsemi.com
SEMICONDUCTOR
NKT200A/NKH200A Series
RoHS
RoHS
N
ell
High Power Products
Fig.1 On-state current vs. voltage characteristic
4
3.5
Fig.2 Transient thermal impedance(junction-case)
0.15
Transient thermal impedance (° C/W)
On-state peak voltage (V)
T
J
= 125
°
C
3
2.5
2
1.5
1
0.5
100
0.12
0.09
0.06
0.03
0
0.001
0.01
0.1
Time (s)
1
10
1000
10000
On-state current (A)
Fig.3 Power consumption vs. average current
600
Fig.4 Case temperature vs. on-state average current
140
Maximum power consumption (W)
180°
ase temperature (° C)
500
0
180
90°
60°
120°
120
0
180
400
300
200
100
0
0
100
Conduction Angle
Conduction Angle
30°
80
60
40
20
0
30°
60°
90°
120°
180°
50
100
150
200
250
300
0
100
200
300
400
On-state average current (A)
On-state average current (A)
Fig.5 On-state surge current vs cycles
8
2
10
1
5
Fig.6 I t characteristics
2
On-state surge current (KA)
7
6
Peak Forward Gate Voltage (10V)
Pe
Po ak
Av
we Ga
r ( te
Po era
10
we ge
w)
r( G
3w at
e
)
5
4
3
2
10
0
5
125
°
C 25
°
C
-30°C
2
Maximum Gate Voltage that will not trigger any unit
2
10
1
2
5
10
2
2
5
10
3
2
5
1
1
10
Cycles @50Hz
100
Time (ms)
www.nellsemi.com
Page 4 of 4
Peak Gate Current (3A)
1000A S
2
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