SEMICONDUCTOR
RoHS
NKT250/NKH250 Series
RoHS
N
ell
High Power Products
Thyristor/Diode and Thyristor/Thyristor, 250A
(
MAGN-A-PAK Power Modules)
40
35
23.5
2.8x0.8±0.1
38±1
3- M8 SCREWS
MAGN A-PAK
FEATURES
•
High voltage
•
Electrically isolated by DBC ceramic
(AI
2
O
3
)
• 3500
V
RMS
isolating voltage
•
Industrial standard package
•
High surge capability
52±1
47±1
115+3
25±1
80
92
4-
6.3
25±1
•
Modules uses high voltage power thyristor/diodes in two
basic configurations
•
Simple mounting
•
UL approved file E320098
•
Compliant to RoHS
•
Designed and qualified for multiple level
All dimensions in millimeters
APPLICATIONS
•
DC motor control and drives
•
Battery charges
•
Welders
•
Power converters
•
Lighting control
•
Heat and temperature control
•
Ups
~
+
K2
G2
~
+
-
G1
K1
NKT
-
G1
K1
NKH
PRODUCT SUMMARY
I
T(AV)
250
A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
T(AV)
I
T(RMS)
I
TSM
I
2
t
I
2
√
t
V
DRM/
V
RRM
T
J
Range
Range
CHARACTERISTICS
85 °C
85 °C
50
Hz
60
Hz
50
Hz
60
Hz
VALUES
250
393
8500
8925
361
329
3612
400
to 1600
-40 to 125
kA
2
s
kA
2
√s
V
°C
A
UNITS
A
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Page 1 of 4
8
37±1
39±1
60±3
•
Glass passivated chips
53±1
SEMICONDUCTOR
RoHS
NKT250/NKH250 Series
RoHS
N
ell
High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
04
NKT250
NKH250
08
10
12
14
16
V
RRM
/V
DRM
,
MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
400
800
1000
1200
1400
1600
V
RSM
/V
DSM
,
MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
500
900
1100
1300
1500
1700
30
I
RRM
/I
DRM
AT
125 °C
mA
FORWARD CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle, on-state
non-repetitive surge current
SYMBOL
I
T(AV)
l
T(RMS)
I
TSM
TEST CONDITIONS
180°
conduction, half sine wave ,50Hz
180°
conduction, half sine wave ,50Hz ,T
C
= 85°C
t
= 10
ms
t
= 8.3
ms
t
= 10
ms
Maximum I
2
t for fusing
I
2
t
t
= 8.3
ms
t
= 10
ms
t
= 8.3
ms
Maximum I
2
√
for fusing
t
Maximum on-state voltage drop
Maximum forward voltage drop
Maximum holding current
Maximum latching current
2
t
I
√
VALUES
250
85
393
8500
UNITS
A
°C
A
No voltage
reapplied
8925
Sine half wave,
initial T
J
=
T
J
maximum
361
329
253
230
3612
1.7
V
1.4
200
mA
400
kA
2
√s
kA
2
s
100%V
RRM
reapplied
t
= 0.1
ms to
10
ms, no voltage reapplied
I
TM
= 750A ,
T
J
= 25 °C, 180°
conduction
I
FM
= 750A ,
T
J
= 25 °C, 180°
conduction
Anode supply
= 12
V initial I
T
= 1
A, T
J
= 25 °C
Anode supply
= 12
V resistive load
= 1
Ω
Gate pulse:
10
V,
100 μs,
T
J
= 25 °C
V
TM
V
FM
I
H
I
L
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
RMS isolation Voltage
Critical rate of rise of
off-state voltage
SYMBOL
I
RRM
,
I
DRM
V
ISO
dV/dt
T
J
= 125 °C
50
Hz, circuit to base,
all terminals shorted, 25
ºC
,1s
T
J
=
T
J
maximum,
exponential to
67 %
rated V
DRM
TEST CONDITIONS
VALUES
30
3500
500
UNITS
mA
V
V/μs
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Page 2 of 4
SEMICONDUCTOR
RoHS
NKT250/NKH250 Series
RoHS
N
ell
High Power Products
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative
gate voltage
Maximum required DC
gate voltage to trigger
Maximum required DC
gate current to trigger
Maximum gate voltage
that will not trigger
Maximum gate current
that will not trigger
Maximum rate of rise of
turned-on current
SYMBOL
P
GM
P
G(AV)
I
GM
-
V
GT
V
GT
T
J
= 25 °C
I
GT
V
GD
T
J
=
T
J
maximum, 67% V
DRM
applied
I
GD
dI/dt
T
J
= 25ºC
,I
GM
= 1.5A ,t
r
≤
0.5 µs
10
200
mA
A/μs
Anode supply
= 12
V,
resistive load; R
a
= 1
Ω
200
mA
V
t
p
≤
5
ms, T
J
=
T
J
maximum
TEST CONDITIONS
t
p
≤
5
ms, T
J
=
T
J
maximum
f
= 50
Hz, T
J
=
T
J
maximum
VALUES
10
3
3
10
V
2
UNITS
W
A
0.25
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
junction operating and storage
temperature range
Maximum thermal resistance,
junction to case per junction
Typical thermal resistance,
case to heatsink per module
SYMBOL
T
J
, T
stg
R
thJC
R
thCS
DC operation
Mounting surface, smooth
,
flat and greased
A mounting compound is recommended and the
torque should be rechecked after a period of
about
3
hours to allow for the
spread of the compound.
TEST CONDITIONS
VALUES
- 40
to
125
0.12
°C/W
0.02
4
N.m
12
900
31.7
Case style
MAGN-A-PAK
g
oz.
UNITS
°C
Mounting
torque
± 10 %
IAP to heatsink, M6
busbar to IAP, M8
Approximate weight
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Page 3 of 4
SEMICONDUCTOR
RoHS
NKT250/NKH250 Series
RoHS
N
ell
High Power Products
Fig.1 On-state current vs. voltage characteristics
4
Fig.2 Transient thermal impedance(junction-case)
0.14
Transient thermal impedance (°C/W)
3.5
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0.001
On-state peak voltage (V)
T
J
= 125°C
3
2.5
2
1.5
1
0.5
100
1000
10000
0.01
0.1
Time (s)
1
10
On-state current (A)
Fig.3 Power consumption vs. average current
500
Fig.4 Case temperature vs. on-state average current
140
Maximum power consumption (W)
400
90°
60°
30°
Case temperature (°C)
180°
120°
120
100
80
60
40
20
30°
60°
90°
120° 180°
300
200
100
0
0
50
100
150
200
250
300
0
100
200
300
400
500
On-state average current (A)
On-state average current (A)
Fig.5 On-state surge current vs cycles
9
400
Fig.6 I t characteristics
2
On-state surge current (KA)
8
7
6
5
4
3
2
1
10
100
350
300
250
200
150
100
1
10
A S (1000A S)
2
2
Cycles @50Hz
Time (ms)
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Page 4 of 4
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