SEMICONDUCTOR
NKD250/NKJ250/NKC250 Series
Standard Diodes, 250 A
(
MAGN-A-PAK Power Modules)
RoHS
RoHS
N
ell Semiconductors
22.5
35
23.5
2.8x0.8+0.1
38+1
3-M8 SCREWS
80
92
115+3
All dimensions in millimeters
25+1
4-Ø6.5
MAGN A-PAK
52+1
•
High surge capability
•
High voltage ratings up to
2000
V
• 3000
V
RMS
isolating voltage with non-toxic substrate
•
Industrial standard package
•
Compliant to RoHS
APPLICATIONS
•
Rectifying bridge for large motor drives
•
Rectifying bridge for large UPS
•
Rectifying power
supplier
•
Frequency converters
-
+
+
25+1
•
UL approved file E320098
•
High current capability
47+1
~
+
-
PRODUCT SUMMARY
I
F(AV)
Type
250
A
Modules
-
Diode, High Voltage
+
-
-
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
CHARACTERISTICS
VALUES
250
T
C
100
392
T
C
50
Hz
I
FSM
60
Hz
50
Hz
60
Hz
I
2
√t
V
RRM
T
Stg
,
T
J
Range
Range
100
11000
A
11600
605
552
6050
800
to
2000
- 40
to
150
UNITS
A
°C
A
°C
I
F(RMS)
I
2
t
kA
2
S
kA
2
√t
V
°C
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Page 1 of 4
37+1
NKD
NKJ
NKC
39+1
60+3
FEATURES
53+1
SEMICONDUCTOR
NKD250/NKJ250/NKC250 Series
RoHS
RoHS
N
ell Semiconductors
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
08
12
16
20
V
RRM
,
MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
800
1200
1600
2000
V
RSM
,
MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
900
1300
20
1700
2100
I
RRM
MAXIMUM
AT T
J
MAXIMUM
mA
NKD250
NKJ250
NKC250
FORWARD CONDUCTION
PARAMETER
Maximum average forward current
at case temperature
Maximum RMS forward current
Maximum peak, one-cycle forward,
non-repetitive surge current
SYMBOL
I
F(AV)
I
F(RMS)
I
FSM
TEST CONDITIONS
180°
conduction, half sine wave
180°
conduction, half sine wave at T
C
= 100 °C
t
= 10
ms
t
= 8.3
ms
t
= 10
ms
Maximum I
2
t for fusing
I
2
t
t
= 8.3
ms
t
= 10
ms
t
= 8.3
ms
Maximum I
2
√t
for fusing
Maximum forward voltage drop
I
2
√t
V
FM
100 %
V
RRM
reapplied
No voltage
reapplied
Sinusoidal half wave,
initial T
J
=
T
J
maximum
VALUES
250
100
392
11.0
11.6
605
552
424
390
6050
1.40
kA
2
√t
V
kA
2
s
UNITS
A
°C
A
kA
t = 0.1ms to 10 ms, no voltage reapplied
I
pk
= 1000
A, T
J
= 25 °C
BLOCKING
PARAMETER
RMS insulation voltage
Maximum peak reverse and
off-state leakage current
SYMBOL
V
INS
I
RRM J
t
=1
s
T
J
=
T maximum, rated V
RRM
applied
T
J
= 25 °C
TEST CONDITIONS
VALUES
3000
20
20
UNITS
V
mA
µA
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating and storage
temperature range
Maximum thermal resistance,
junction to ca se per junction
Maximum thermal resistance,
case to heatsink
Mounting torque
± 10 %
Approximate weight
Case style
See dimensions
-
link at the end of datasheet
MAP to heatsink, M6
busbar to MAP, M8
SYMBOL
T
J
,
T
Stg
R
thJC
R
thC-hs
A mounting compound is recommended and the torque
should be rechecked after a period of
3
hours to allow
for the spread of the compound.
DC operation
TEST CONDITIONS
VALUES
- 40
to
150
0.14
K/W
0.044
4
12
900
g
UNITS
°C
Nm
MAGN-A-PAK
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Page 2 of 4
SEMICONDUCTOR
NKD250/NKJ250/NKC250 Series
RoHS
RoHS
N
ell Semiconductors
ORDERING INFORMATION TABLE
Device code
NKD 250
1
1
2
3
-
-
-
2
/
16
3
Module type: NKD.NKJ and NKC for (Diode + Diode) module
Current rating: I
F(AV)
Voltage code x
100 =
V
RRM
Fig.1 On-state current vs. voltage characteristic
Fig.2 Transient thermal impedance(junction-case)
On-state peak voltage (V)
3
Transient thermal impedance (°C/W)
3.5
0.15
0.12
T
J
= 150°C
2.5
0.09
2
0.06
1.5
0.03
1
0.5
100
1000
10000
0
0.001
00.1
0.1
1
10
On-state current (A)
Fig.3 Power consumption vs. average current
Time (s)
Fig.4 Case temperature vs. on-state average current
160
500
Maximum power consumption (W)
140
400
0
180
0
180
Case temperature (°C)
Conduction Angle
300
60°
30°
90°120°
180°
Conduction Angle
120
100
200
30°
80
60°
90° 120°
180°
100
60
0
0
50
100
150
200
250
300
40
0
50
100
150
200
250
300
On-state average current (A)
On-state average current (A)
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Page 3 of 4
SEMICONDUCTOR
NKD250/NKJ250/NKC250 Series
RoHS
RoHS
N
ell Semiconductors
Fig.5 On-state surge current vs. cycles
12
650
Fig.6 I
2
t Characteristic
On-state surge current (KA)
10
550
I
2
t ( 10³A²S )
1
100
8
450
6
350
4
250
2
10
150
1
10
Cycles @50Hz
Time (ms)
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Page 4 of 4
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