SEMICONDUCTOR
RoHS
NKD160S/NKJ160S/NKC160S Series
RoHS
N
ell High Power Products
Standard Recovery Diodes, 160 A
(INT-A-PAK
Power Modules)
16.5
23
23
17.5
2-Ø6.5
80
93
FEATURES
•
High voltage
•
Electrically isolated by DBC ceramic
(AI
2
O
3
)
• 3000
V
RMS
isolating voltage
•
High surge capability
•
Glass passivated chips
•
Modules uses high voltage power
diodes
in four
basic configurations
•
Simple mounting
•
UL approved file E320098
•
Compliant to RoHS
•
Designed and qualified for multiple level
7.5
3-M5 SCREWS
•
Industrial standard package
All dimensions in millimeters
APPLICATIONS
•
DC motor control and drives
•
Battery charges
•
Welders
•
Power converters
~
+
-
NKD
NKJ
NKC
-
+
+
PRODUCT SUMMARY
I
F(AV)
Type
160
A
Modules
-
Diode, High Voltage
+
-
-
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
F(AV)
I
F(RMS)
I
FSM
I
2
t
I
2
√
t
V
RRM
T
J
Range
50
Hz
60
Hz
50
Hz
60
Hz
CHARACTERISTICS
VALUE
160
T
C
100
251
6000
6300
180
163
1800
400
to 1600
-40 to 150
kA
2
s
kA
2
√s
V
°C
A
UNITS
A
°C
www.nellsemi.com
Page 1 of 3
21
30.5
26
SEMICONDUCTOR
RoHS
NKD160S/NKJ160S/NKC160S Series
RoHS
N
ell High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
04
NKD160..S
NKJ160..S
NKC160..S
08
12
14
16
V
RRM
,
MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
400
800
1200
1400
1600
V
RSM
,
MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
500
900
1300
1500
1700
8
I
RRM
AT
150 °C
mA
FORWARD CONDUCTION
PARAMETER
Maximum average on-state current
at case temperature
Maximum RMS on-state current
Maximum peak, one-cycle, on-state
non-repetitive surge current
SYMBOL
I
F(AV)
I
F(RMS)
I
FSM
TEST CONDITIONS
180°
conduction, half sine wave
180°
conduction, half sine wave ,50Hz ,T
C
= 100°C
t
= 10
ms
t
= 8.3
ms
t
= 10
ms
Maximum I
2
t for fusing
I
2
t
t
= 8.3
ms
t
= 10
ms
t
= 8.3
ms
Maximum I
2
√
for fusing
t
Maximum forward voltage drop
2
t
I
√
VALUE
160
100
251
6000
UNITS
A
°C
A
No voltage
reapplied
6300
Sine half wave,
initial T
J
=
T
J
maximum
180
163
126
114
1800
1.4
kA
2
√s
V
kA
2
s
100%V
RRM
reapplied
t
= 0.1
ms to
10
ms, no voltage reapplied
I
FM
= 300A ,
T
J
= 25 °C, 180°
conduction
V
FM
BLOCKING
PARAMETER
Maximum peak reverse and
off-state leakage current
SYMBOL
I
RRM
T
J
= 150 °C
50
Hz, circuit to base
,all
terminals shorted
,t = 1s
RMS isolation Voltage
V
ISO
t
= 60s
2500
TEST CONDITIONS
VALUES
8
3000
V
UNITS
mA
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction operating
temperature range
Maximum thermal resistance,
junction to ca se per junction
Maximum thermal resistance,
case to heatsink per module
Mounting
torque
± 10 %
IAP to heatsink, M6
busbar to IAP, M5
SYMBOL
T
Stg
, T
J
R
thJC
R
thCS
DC operation
Mounting surface, smooth
,
flat and greased
A mounting compound is recommended and the
torque should be rechecked after a period of
3
hours to allow for the spread of the compound.
Lubricated threads.
TEST CONDITIONS
VALUES
- 40
to
150
0.21
°C/W
0.054
UNITS
°C
4
to
6
N.m
140
Approximate weight
4.9
Case style
New INT-A-PAK
g
oz.
www.nellsemi.com
Page 2 of 3
SEMICONDUCTOR
RoHS
NKD160S/NKJ160S/NKC160S Series
RoHS
N
ell High Power Products
Fig1. Power dissipation
Fig2.Forward Current Derating Curve
250
A
DC
rec.120
rec.30
rec.60
sin.180
DC
300
w
200
sin.180
rec.120
rec.60
150
150
100
rec.30
50
P
vtct
0
0 Io
120
A 240
Io
0
0 Tc
50
100
°C
150
Fig3.Transient thermal impedance
0.3
°C/W
Fig4.Max Non-Repetitive Forward Surge Current
8000
50HZ
A
Zth(j-c)
0.15
4000
0
0.001
0.01
0.1
1
10
S 100
0
1
10
cycles 100
Fig5.Forward Characteristics
400
A
300
200
typ.
max.
100
25 °C
IF
0
0
VF 0.5
1.0
1.5
125 °C
V 2.0
www.nellsemi.com
Page 3 of 3
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
