NCV8876
Automotive Grade
Start-Stop Non-Synchronous
Boost Controller
The NCV8876 is a Non-Synchronous Boost controller designed to
supply a minimum output voltage during Start-Stop vehicle operation
battery voltage sags. The controller drives an external N-channel
MOSFET. The device uses peak current mode control with internal
slope compensation. The IC incorporates an internal regulator that
supplies charge to the gate driver.
Protection features include, cycle-by-cycle current limiting,
protection and thermal shutdown.
Additional features include low quiescent current sleep mode
operation. The NCV8876 is enabled when the supply voltage drops
below 7.3 V, with boost operation initiated when the supply voltage is
below 6.8 V.
Features
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MARKING
DIAGRAM
8
8
1
SOIC−8
D SUFFIX
CASE 751
1
8876xx = Specific Device Code
xx = 00, 01
A
= Assembly Location
L
= Wafer Lot
Y
= Year
W
= Work Week
G
= Pb−Free Package
8876xx
ALYW
G
•
•
•
•
•
•
•
•
•
•
•
Automatic Enable Below 7.3 V (Factory Programmable)
Boost Mode Operation at 6.8 V
$2%
Output Accuracy Over Temperature Range
Peak Current Mode Control with Internal Slope Compensation
Externally Adjustable Frequency Operation
Wide Input Voltage Range of 2 V to 40 V, 45 V Load Dump
Low Quiescent Current in Sleep Mode (<11
mA
Typical)
Cycle−by−Cycle Current Limit Protection
Hiccup−Mode Overcurrent Protection (OCP)
Thermal Shutdown (TSD)
This is a Pb−Free Device
PIN CONNECTIONS
STATUS 1
ISNS 2
GND 3
GDRV 4
(Top View)
8 ROSC
7 VC
6 VOUT
5 VDRV
Typical Applications
•
Applications Requiring Regulated Voltage through Cranking and
Start−Stop Operation
ORDERING INFORMATION
Device
NCV887600D1R2G
NCV887601D1R2G
Package
SOIC−8
(Pb−Free)
SOIC−8
(Pb−Free)
Shipping
†
2500 / Tape &
Reel
2500 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2013
June, 2013
−
Rev. 1
1
Publication Order Number:
NCV8876/D
NCV8876
V
g
TEMP
FAULT
LOGIC
ROSC
R
OSC
CLK
8
OSC
PWM
SC
DRIVE
LOGIC
4
2
CL
+
C
g
VDRV
5
C
DRV
VDRV
GDRV
ISNS
GND
R
SNS
L
D
Q
C
o
V
o
CSA
3
VC
R
C
7
SCP
C
decoupling
Gm
WAKEUP
V
REF
6
1
VOUT
STATUS
V
micro
C
C
STATUS
Battery In
Figure 1. Typical Application
7.7 V
7.3 V
6.8 V
VOUT
Sleep Threshold
Wakeup Threshold
Regulation
(Internal signal)
COMP
GDRV
Wakeup Delay
Comp Delay
Wakeup
Internal Clamp
Voltage
Figure 2. Functional Waveforms
PACKAGE PIN DESCRIPTIONS
Pin No.
1
Pin
Symbol
STATUS
Function
This is an open−drain diagnostic. IC status operation flag indicator. This output is a logic low when IC VOUT is
below 7.2 V and device is active. A pull−up resistor of around 80 kW should be connected between STATUS
and a microcontroller reference. This output is a logic high when the IC is disabled or in UVLO. Ground is left
unused.
Current sense input. Connect this pin to the source of the external N−MOSFET, through a current−sense res-
istor to ground to sense the switching current for regulation and current limiting.
Ground reference.
Gate driver output. Connect to gate of the external N−MOSFET. A series resistance can be added from GDRV
to the gate to tailor EMC performance.
Driving voltage. Internally−regulated supply for driving the external N−MOSFET, sourced from VOUT. Bypass
with a 1.0
mF
ceramic capacitor to ground.
Monitors output voltage and provides IC input voltage.
Output of the voltage error transconductance amplifier. An external compensator network from VC to GND is
used to stabilize the converter.
Use a resistor to ground to set the frequency.
2
3
4
5
6
7
8
ISNS
GND
GDRV
VDRV
VOUT
VC
ROSC
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2
NCV8876
ABSOLUTE MAXIMUM RATINGS
(Voltages are with respect to GND, unless otherwise indicated)
Rating
Dc Supply Voltage (VOUT)
Peak Transient Voltage (Load Dump on VOUT)
Dc Supply Voltage (VDRV, GDRV)
Dc Voltage (VC, ISNS, ROSC)
Dc Voltage (STATUS)
Dc Voltage Stress (VOUT
−
VDRV)
Operating Junction Temperature
Storage Temperature Range
Peak Reflow Soldering Temperature: Pb−Free, 60 to 150 seconds at 217°C
Value
−0.3
to 40
45
12
−0.3
to 3.6
−0.3
to 6
−0.7
to 40
−40
to 150
−65
to 150
265 peak
Unit
V
V
V
V
V
V
°C
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
PACKAGE CAPABILITIES
Characteristic
ESD Capability (All Pins)
Moisture Sensitivity Level
Package Thermal Resistance
1. 1 in
2
, 1 oz copper area used for heatsinking.
Junction−to−Ambient, R
qJA
(Note 1)
Human Body Model
Machine Model
Value
≥2.0
≥200
1
100
°C/W
Unit
kV
V
TYPICAL VALUES
Part No.
NCV887600
NCV887601
D
max
83%
83%
f
S
170 kHz
170 kHz
S
a
34 mV/ms
53 mV/ms
V
cl
400 mV
200 mV
I
src
800 mA
800 mA
I
sink
600 mA
600 mA
VOUT
6.8 V
6.8 V
SCE
N
N
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3
NCV8876
ELECTRICAL CHARACTERISTICS
(−40°C < T
J
< 150°C, 4.25 V < V
IN
< 40 V, unless otherwise specified) Min/Max values are
guaranteed by test, design or statistical correlation.
Characteristic
GENERAL
Quiescent Current, Sleep Mode
Quiescent Current, No switching
OSCILLATOR
Switching Frequency
R
OSC
Voltage
Default Switching
F
SW
V
ROSC
F
SW
ROSC = Open (NCV887600, NCV887601)
ROSC = 100 kW
ROSC = 20 kW
ROSC = 10 kW
Operating Range
NCV887600
NCV887601
153
153
−
153
180
283
409
90
ROSC = OPEN
NCV887600
NCV887601
81
30
46
−
−
1.0
170
200
315
455
115
83
34
53
501
501
−
187
220
347
501
140
85
38
60
kHz
V
kHz
I
q,sleep
I
q,off
V
OUT
= 13.2 V, T
J
= 25°C
Into V
OUT
pin, 6.8 V < V
OUT
< 7.2 V,
No switching
−
−
12
2.2
14
4.0
mA
mA
Symbol
Conditions
Min
Typ
Max
Unit
Minimum Pulse Width
Maximum Duty Cycle
Slope Compensating Ramp
STATUS FLAG
STATUS Wake Up Delay
STATUS Pull−down Capability
CURRENT SENSE AMPLIFIER
Low−Frequency Gain
Bandwidth
ISNS Input Bias Current
Current Limit Threshold Voltage
Current Limit,
Response Time
Overcurrent Protection,
Threshold Voltage
Overcurrent Protection,
Response Time
t
on,min
D
max
S
a
ns
%
mV/
ms
V
OUT
< 7.2 V
Sinking 1.0 mA
−
−
9.3
−
14.0
400
ms
mV
A
csa
BW
csa
I
sns,bias
V
cl
t
cl
%V
ocp
t
ocp
Input−to−output gain at dc, ISNS
≤
1 V
Gain of A
csa
−
3 dB
Out of ISNS pin
Voltage on ISNS pin
NCV887600
NCV887601
0.9
2.5
−
360
180
−
125
−
1.0
−
30
400
200
80
150
80
1.1
−
50
440
220
125
175
125
V/V
MHz
mA
mV
ns
%
ns
CL tripped until GDRV falling edge,
V
ISNS
= V
cl
+ 40 mV
Percent of V
cl
From overcurrent event, Until switching
stops, V
ISNS
= V
OCP
+ 40 mV
VOLTAGE ERROR OPERATIONAL TRANSCONDUCTANCE AMPLIFIER
Transconductance
VEA Output Resistance
VEA Maximum Output Voltage
VEA Sourcing Current
VEA Sinking Current
VEA Clamp Voltage
VC Delay
GATE DRIVER
Sourcing Current
Sinking Current
Driving Voltage Dropout
Driving Voltage Source Current
I
src
I
sink
V
drv,do
I
drv
V
DRV
≥
6 V,
V
DRV
−
V
GDRV
= 2 V
V
GDRV
≥
2 V
V
OUT
−
V
DRV
, Iv
DRV
= 25 mA
V
OUT
−
V
DRV
= 1 V
NCV887600
NCV887601
NCV887600
NCV887601
550
550
500
500
−
35
800
800
600
600
0.3
45
−
−
−
−
0.6
−
mA
mA
V
mA
g
m,vea
R
o,vea
V
c,max
I
src,vea
I
snk,vea
V
c,clamp
VEA output current, Vc = 2.0 V
VEA output current, Vc = 1.5 V
V
OUT
< 7.2 V
V
OUT
< 7.2 V
V
OUT
=
±100
mV
0.8
2.0
2.5
80
80
−
−
1.2
−
−
100
100
1.1
53
1.6
−
−
−
−
−
60
mS
MΩ
V
mA
mA
V
ms
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4
NCV8876
ELECTRICAL CHARACTERISTICS
(−40°C < T
J
< 150°C, 4.25 V < V
IN
< 40 V, unless otherwise specified) Min/Max values are
guaranteed by test, design or statistical correlation.
Characteristic
GATE DRIVER
Backdrive Diode Voltage Drop
Driving Voltage
UVLO
Undervoltage Lock−out,
Threshold Voltage
Undervoltage Lock−out,
Hysteresis
THERMAL SHUTDOWN
Thermal Shutdown Threshold
Thermal Shutdown Hysteresis
Thermal Shutdown Delay
VOLTAGE REGULATION
Voltage Regulation
Threshold IC Enable
Threshold IC Disable
Threshold IC Enable – Voltage
Regulation
Threshold IC Disable – Threshold
IC Enable
VOUT
,reg
VOUT descending
VOUT ascending
NCV887600
NCV887601
NCV887600
NCV887601
NCV887600
NCV887601
NCV887600
NCV887601
NCV887600
NCV887601
6.66
6.66
7.1
7.1
7.5
7.5
0.32
0.32
−
−
6.8
6.8
7.3
7.3
7.7
7.7
0.5
0.5
0.4
0.4
6.94
6.94
7.5
7.5
7.9
7.9
−
−
−
−
V
V
V
V
V
T
sd
T
sd,hys
t
sd,dly
T
J
rising
T
J
falling
From T
J
> T
sd
to stop switching
160
10
−
170
15
−
180
20
100
°C
°C
ns
V
uvlo
V
uvlo,hys
VOUT falling
VOUT rising
3.4
300
3.59
440
3.8
550
V
mV
V
d,bd
V
DRV
V
DRV
– V
OUT
, I
d,bd
= 5 mA
I
VDRV
= 0.1
−
25 mA
NCV887600
NCV887601
−
5.8
5.8
−
6.0
6.0
0.7
6.2
6.2
V
V
Symbol
Conditions
Min
Typ
Max
Unit
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