Semiconductor
SRA2212M
PNP Silicon Transistor
Descriptions
•
Switching application
•
Interface circuit and driver circuit application
Features
•
•
•
•
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
High packing density
Ordering Information
Type NO.
SRA2212M
Marking
2212
Package Code
TO-92M
Outline Dimensions
4.0±0.1
unit :
mm
•
Equivalent Circuit
3.0±0.1
C(OUT)
0.44 REF
0.52 REF
B(IN)
14.0±0.40
R
1
R
1
= 100KΩ
Ω
E(COMMON)
1.27 Typ.
2.54
±
0.1.
1 2 3
0.7 Typ.
3.0±0.1
3.8 Min.
0.42 Typ.
PIN Connections
1. Emitter
2. Collector
3. Base
KSR-I019-000
1
SRA2212M
Absolute maximum ratings
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Junction Temperature
Storage Temperature
(Ta=25°C)
°
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
T
STG
Ratings
-50
-50
-5
-100
400
150
-55 ~ 150
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Transition Frequency
Input Resistance
(Ta=25°C)
°
Symbol
I
CBO
I
EBO
h
FE
V
CE(SAT)
f
T
*
R
1
Test Condition
V
CB
=-50V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-5V, I
C
=-1mA
I
C
=-10mA, I
B
=-0.5mA
V
CE
=-10V, I
C
=-5mA
-
Min. Typ. Max.
-
-
120
-
-
-
-
-
-
-0.1
250
100
-500
-500
-
-0.3
-
-
Unit
nA
nA
-
V
MHz
KΩ
* : Characteristic of Transistor Only
Electrical Characteristic Curves
Fig. 1 h
FE
- I
C
Fig. 2 V
CE(SAT)
- I
C
KSR-I019-000
2
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