SEMICONDUCTOR
N-HFA60PA40C
FRED
Ultrafast Soft Recovery Diode, 2 x 30 A
RoHS
RoHS
N
ell
High Power Products
FEATURES
Ultrafast recovery
Ultrasoft recovery
Very low I RRM
Very low Q rr
Specified at operating conditions
Designed and qualified for industrial level
TO-247 AB
BENEFITS
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
common
cathode
2
DESCRIPTION
HFA60PA40C is a state of the art center tap ultrafast
recovery diode.
Employing the latest in epitaxial
construction and advanced processing techniques
it features a superb combination of characteristics
which result in performance which is unsurpassed by
any rectifier previously available. With basic ratings
of 400V and 30 A per leg continuous current, the
HFA60PA40C is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition
to ultrafast recovery time, the FRED product line
features extremely low values of peak recovery
current (I RRM ) and does not exhibit any tendency to
“snap-off” during the t b portion of recovery. The FRED
features combine to offer designers a rectifier with
lower noise and significantly lower switching losses
in both the diode and the switching transistor.
These FRED advantages can help to significantly
reduce snubbing, component count and heatsink
sizes. The FRED HFA60PA40C is ideally suited for
applications in power conversion systems (such as
inverters), motor drives, and many other similar
applications where high speed, high efficiency is
needed.
1
Anode
1
2
Common
cathode
3
Anode
2
PRODUCT SUMMARY
V
R
V
F
at 30A at 25
°
C
400 V
1.3 V
2 x 30 A
22 ns
150
°C
49 nC
3.0 A
I
F(AV)
t
rr
(typical)
T
J
(maximum)
Q
rr
(typical)
l
RRM
(typical)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Operating junction and storage temperature range
per leg
per device
SYMBOL
TEST CONDITIONS
VALUES
400
30
Tc = 100
ºC
60
320
- 55 to + 150
ºC
A
UNITS
V
R
I
F
V
l
FSM
T
J
, T
Stg
www.nellsemi.com
Page 1 of 5
SEMICONDUCTOR
N-HFA60PA40C
(T
J
= 25 ºC unless otherwise specified
)
TEST CONDITIONS
MIN.
TYP.
RoHS
RoHS
N
ell
High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
MAX.
UNITS
Cathode to anode
breakdown voltage
V
BR
I
R
= 100 µA
I
F
= 30 A
400
-
-
-
-
-
-
-
-
1.3
1.6
1.2
-
-
60
12
-
1.5
-
-
100
500
-
-
µA
pF
nH
V
Maximum forward voltage
V
FM
I
F
= 60 A
I
F
= 30 A, T
J
= 125 ºC
Maximum reverse
leakage current
Junction capacitance
Series inductance
I
RM
C
T
L
S
V
R
= V
R
rated
T
J
= 125° C, V
R
= V
R
rated
V
R
= 200 V
Measured lead to lead 5 mm from package body
DYNAMIC RECOVERY CHARACTERISTICS PERLEG
PARAMETER
SYMBOL
(T
J
= 25 ºC unless otherwise specified
)
MIN.
TYP.
MAX.
UNITS
TEST CONDITIONS
t
rr
Reverse recovery time
t
rr1
t
rr2
Peak recovery current
I
RRM1
I
RRM2
Reverse recovery charge
Q
rr1
Q
rr2
I
F
= 0.5A, I
R
= 1.0A, I
RR
= 250mA (RG#1 CKT)
I
F
= 1.0 A, dI
F
/dt = -100 A/µs, V
R
=30 V, T
J
= 25
°
C
T
J
= 25 ºC
T
J
= 125 ºC
T
J
= 25 ºC
T
J
= 125 ºC
T
J
= 25 ºC
T
J
= 125 ºC
I
F
= 30A
dI
F
/dt = -200 A/µs
V
R
= 266 V
-
-
-
-
-
-
-
-
28
22
32
95
3
7
49
360
35
-
ns
50
-
-
A
-
-
-
nC
THERMAL
-
MECHANICAL SPECIFICATIONS PER LEG
PARAMETER
Lead temperature
Junction to case,
single leg conduction
Junction to case,
both legs conducting
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
Case style TO-247AB (JEDEC)
SYMBOL
T
lead
TEST CONDITIONS
0.063'' from case (1.6 mm) for 10 s
MIN
.
-
-
R
thJC
-
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth and greased
-
-
-
-
6.0
(5.0)
-
-
0.25
6.0
0.21
-
TYP
.
-
-
MAX
.
300
UNITS
°C
0.67
0.34
K/W
40
-
-
-
12
(10)
g
oz.
kgf . cm
(lbf . in)
HFA60PA40C
www.nellsemi.com
Page 2 of 5
SEMICONDUCTOR
N-HFA60PA40C
RoHS
RoHS
N
ell
High Power Products
Fig.1 Maximum effective transient thermal impedance, junction-to-case vs. pulse duration
0.70
Thermal impedance(°C/W), Z
θJC
0.60
0.50
0.40
0.9
0.7
0.5
0.30
0.20
0.10
0
10
-5
0.3
Note
:
PDM
t1
t2
0.1
0.05
10
-4
SINGLE PULSE
10
-3
10
-2
Duty Factor D =
1
/
t 2
Peak TJ = PDM x ZθJC
+ TC
t
10
-1
1.0
Rectangular pulse duration (seconds)
Fig.2 Forward current vs. forward voltage
120
100
Fig.3 Reverse recovery time vs. current rate of change
100
Reverse recovery time, t
rr
(ns)
60A
80
30A
60
T
J
=125°C
V
R
=266V
Forward current, I
F
80
15A
(A)
60
T
J
=125°C
40
40
T
J
=150°C
T
J
=25°C
20
T
J
=-55°C
20
0
0
0.5
1
1.5
2
2.5
0
0
200
400
600
800
1000
1200
Anode-to-cathode voltage (V), V
F
Current rate of change(A/ s ), -di
F
/dt
Fig.4 Reverse recovery charge vs. current rate of change
1000
Fig 5. Reverse recovery current vs. current rate of change
Reverse recovery current, I
RRM
30
25
20
Reverse recovery charge, Q
rr
T
J
=125°C
V
= 266
V
R
T
J
=125°C
V
= 266
V
R
60A
800
60A
600
30A
(nC)
(A)
15
30A
10
15A
5
0
400
15A
200
0
0
200
400
600
800
1000
1200
Current rate of change (A/ s), -di
F
/dt
0
200
400
600
800
1000
1200
Current rate of change (A/ s), -di
F
/dt
www.nellsemi.com
Page 3 of 5
SEMICONDUCTOR
N-HFA60PA40C
RoHS
RoHS
N
ell
High Power Products
Fig6. Dynamic parameters vs. junction temperature
1.4
Fig.7 Maximum average forward current vs. case temperature
90
(Normalized to 1000A/ µ s)
Dynamic parameters, K f
1.2
t
rr
1.0
0.8
0.6
0.4
0.2
0.0
0
Q
rr
I
RRM
t
rr
Q
rr
80
70
60
Duty cycle
= 0.5
T
J
=175°C
l F(AV) (A)
50
40
30
20
10
0
25
50
75
100
125
150
25
50
75
100
125
150
175
Junction temperature ( ° C),T
J
Case temperature ( ° C)
Fig.8 Junction capacitance vs. reverse voltage
350
Junction capacitance, C J
300
250
(pF)
200
150
100
50
0
1
10
reverse voltage (V), V
R
100
200
www.nellsemi.com
Page 4 of 5
SEMICONDUCTOR
N-HFA60PA40C
RoHS
RoHS
N
ell
High Power Products
ORDERING INFORMATION TABLE
Device code
N
1
1
2
3
4
5
6
-
-
-
-
-
-
-
HFA
2
60
3
PA
4
40
5
C
6
Nell Semiconductors product
FRED family
Current rating ( 60 = 30 A, 30A x 2)
Package outline (PA = TO-247, 3 pins)
Voltage rating (40 = 400 V)
Configuration (C = Center tap common cathode)
www.nellsemi.com
Page 5 of 5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
