SEMICONDUCTOR
N-HFA30PA40C
FRED
Ultrafast Soft Recovery Diode, 2 x 15 A
RoHS
RoHS
N
ell
High Power Products
FEATURES
Ultrafast recovery
Ultrasoft recovery
Very low I RRM
Very low Q rr
Specified at operating conditions
Designed and qualified for industrial level
TO-247 AB
BENEFITS
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
common
cathode
2
DESCRIPTION
HFA30PA40C is a state of the art center tap ultrafast
recovery diode.
Employing the latest in epitaxial
construction and advanced processing techniques
it features a superb combination of characteristics
which result in performance which is unsurpassed by
any rectifier previously available. With basic ratings
of 400V and 15 A per leg continuous current, the
HFA30PA40C is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition
to ultrafast recovery time, the FRED product line
features extremely low values of peak recovery
current (I RRM ) and does not exhibit any tendency to
“snap-off” during the t b portion of recovery. The FRED
features combine to offer designers a rectifier with
lower noise and significantly lower switching losses
in both the diode and the switching transistor.
These FRED advantages can help to significantly
reduce snubbing, component count and heatsink
sizes. The FRED HFA30PA40C is ideally suited for
applications in power conversion systems (such as
inverters), motor drives, and many other similar
applications where high speed, high efficiency is
needed.
1
Anode
1
2
Common
cathode
3
Anode
2
PRODUCT SUMMARY
V
R
V
F
at
15A
at
25
°C
400
V
1.3
V
2
x
15
A
19
ns
150
°C
80
nC
160
A/µs
4.0
A
I
F(AV)
t
rr
(typical)
T
J
(maximum)
Q
rr
(typical)
dl
(rec)M
/dt (typical)
l
RRM
(typical)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
per leg
per device
SYMBOL
TEST CONDITIONS
VALUES
400
15
Tc
= 100
ºC
30
150
60
Tc
= 25
ºC
Tc
= 100
ºC
75
70
- 55
to
+ 150
ºC
W
A
UNITS
V
R
I
F
V
l
FSM
l
FRM
P
D
T
J
, T
Stg
Page 1 of 5
SEMICONDUCTOR
N-HFA30PA40C
(T
J
= 25 ºC unless otherwise specified)
TEST CONDITIONS
MIN.
TYP.
RoHS
RoHS
N
ell
High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
MAX.
UNITS
Cathode to anode
breakdown voltage
V
BR
I
R
= 100
µA
I
F
= 15
A
400
-
-
-
-
-
-
-
-
1.3
1.6
1.2
-
-
25
12
-
1.5
-
-
50
500
50
-
µA
pF
nH
V
Maximum forward voltage
V
FM
I
F
= 30
A
I
F
= 15
A, T
J
= 125
ºC
Maximum reverse
leakage current
Junction capacitance
Series inductance
I
RM
C
T
L
S
V
R
= V
R
rated
T
J
= 125°C,
V
R
= V
R
rated
V
R
= 200V
Measured lead to lead
5
mm from package body
DYNAMIC RECOVERY CHARACTERISTICS PERLEG
PARAMETER
SYMBOL
(T
J
= 25 ºC unless otherwise specified)
MIN.
TYP.
MAX.
UNITS
TEST CONDITIONS
t
rr
Reverse recovery time
t
rr1
t
rr2
Peak recovery current
I
RRM1
I
RRM2
Reverse recovery charge
Q
rr1
Q
rr2
I
F
= 0.5A, I
R
= 1.0A, I
RR
= 250mA (RG#1 CKT)
I
F
= 1.0
A, dI
F
/dt = -100 A/µs, V
R
=30 V, T
J
= 25°C
T
J
= 25
ºC
T
J
= 125
ºC
T
J
= 25
ºC
T
J
= 125
ºC
T
J
= 25
ºC
T
J
= 125
ºC
I
F
= 15A
dI
F
/dt = -200 A/µs
V
R
= 266 V
-
-
-
-
-
-
-
-
28
19
35
95
3
6
60
300
35
-
ns
60
120
6.0
10
180
600
nC
A
THERMAL
-
MECHANICAL SPECIFICATIONS PER LEG
PARAMETER
Lead temperature
Junction to case,
single leg conduction
Junction to case,
both legs conducting
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
Case style TO-247AB
(JEDEC)
SYMBOL
T
lead
TEST CONDITIONS
0.063''
from case
(1.6
mm) for
10
s
MIN.
-
-
R
thJC
-
R
thJA
R
thCS
Typical socket mount
Mounting surface, flat, smooth and greased
-
-
-
-
6.0
(5.0)
-
-
0.25
6.0
0.21
-
TYP.
-
-
MAX.
300
UNITS
°C
1.40
0.70
K/W
40
-
-
-
12
(10)
g
oz.
kgf
.
cm
(lbf .
in)
HFA30PA40C
Page 2 of 5
SEMICONDUCTOR
N-HFA30PA40C
RoHS
RoHS
N
ell
High Power Products
Fig.1 Maximum effective transient thermal impedance, junction-to-case vs. pulse duration
1.40
Thermal impedance(°C/W), Z
θJC
1.20
1.00
0.80
0.9
0.7
0.5
0.60
Note:
PDM
t
1
t
2
0.40
0.20
0
10
-5
0.3
0.1
0.05
10
-4
SINGLE PULSE
10
-3
10
-2
Duty Factor D =t 1 /t 2
Peak T
J
= P
DM
xZ
θ
JC
+T
C
10
-1
1.0
Rectangular pulse duration (seconds)
Fig.2 Forward current vs. forward voltage
60
50
Fig.3 Reverse recovery time vs. current rate of change
120
T
J
=125°C
T
R
=266V
Reverse recovery time, t
rr
(ns)
100
80
30A
15A
Forward current, I
F
40
(A)
7.5A
60
40
20
0
30
20
10
0
0
0.5
1
1.5
2
2.5
T
J
=125°C
T
J
=150°C
T
J
=150°C
T
J
=-55°C
T
J
=25°C
0
200
400
600
800
1000
1200
Anode-to-cathode voltage (V), V
F
Current rate of change(A/μs), -di
F
/dt
Fig.4 Reverse recovery charge vs. current rate of change
800
Fig 5. Reverse recovery current vs. current rate of change
Reverse recovery current, I
RRM
25
T
J
=125°C
T
R
=266V
Reverse recovery charge, Q
rr
700
600
500
(nC)
T
J
=125°C
T
R
=266V
30A
30A
20
400
300
7.5A
200
100
0
0
(A)
15A
15
15A
10
7.5A
5
200
400
600
800
1000
1200
0
0
200
400
600
800
1000
1200
Current rate of change (A/μs), -di
F
/dt
Current rate of change (A/μs), -di
F
/dt
Page 3 of 5
SEMICONDUCTOR
N-HFA30PA40C
RoHS
RoHS
N
ell
High Power Products
Fig6. Dynamic parameters vs. junction temperature
1.4
Qrr
Fig.7 Maximum average forward current vs. case temperature
40
35
30
Duty cycle = 0.5
T
J
=175°C
(Normalized to 1000A/µs)
Dynamic parameters, K f
1.2
trr
1.0
0.8
0.6
0.4
0.2
0.0
0
Qrr
I
RRM
trr
l F(AV) (A)
75
25
20
15
10
5
0
25
25
50
100
125
150
50
75
100
125
150
175
Junction temperature (°C),T
J
Case temperature (°C)
Fig.8 Junction capacitance vs. reverse voltage
200
Fig.9 Reverse recovery parameter test circuit
Junction capacitance, C J
V
R
= 200
V
150
0.01
Ω
(pF)
L
= 70
µH
100
D
G
D.U.T.
dIF
/dt
adjust
50
IRFP250
S
0
1
10
reverse voltage (V), V
R
100
200
Fig.10 Reverse recovery waveform and definitions
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5
I
RRM
dI
(rec)M
/dt
(5)
0.75
I
RRM
(1)
dI
F
/dt
(1)
dI
F
/dt -
rate of change of current
through zero crossing
(2)
I
RRM
-
peak reverse recovery current
(3)
t
rr
-
reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through
0.75
I
RRM
and
0.50
I
RRM
extrapolated to zero current.
(4)
Q
rr
-
area under curve defined by t
rr
and I
RRM
Qrr
=
t
rrx
l
RRM
2
(5)
dI
(rec)M
/dt -
peak rate of change of
current during t
b
portion of t
rr
Page 4 of 5
SEMICONDUCTOR
N-HFA30PA40C
RoHS
RoHS
N
ell
High Power Products
ORDERING INFORMATION TABLE
Device code
N
1
1
2
3
4
5
6
-
-
-
-
-
-
-
HFA
2
30
3
PA
4
40
5
C
6
Nell Semiconductors product
FRED family
Current rating
(30 = 30
A, 15A x 2)
Package outline
(PA =
TO-247,
3
pins)
Voltage rating
(40 = 400
V)
Configuration
(
C
=
Center tap common cathode)
Page 5 of 5
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