SEMICONDUCTOR
RoHS
N-HFA16TB120
RoHS
Nell High Power Products
FEATURES
FRED
Ultrafast Soft Recovery Diode, 16 A
Available
RoHS*
COMPLIANT
Ultrafast recovery
Ultrasoft recovery
Very low I
RRM
Very low Q
rr
Specified at operating conditions
Lead
(Pb)-free
Designed and qualified for industrial level
BENEFITS
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
cathode
2
DESCRIPTION
HFA16TB120 is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction
and advanced processing techniques it features
a superb combination of characteristics which result
in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 1200V
and 16 A continuous current, the HFA16TB120 is
especially well suited for use as the companion
diode for IGBTs and MOSFETs. In addition to ultrafast
recovery time, the FRED product line features
extremely low values of peak recovery current (I RRM )
and does not exhibit any tendency to “snap-off” during
the t b portion of recovery. The FRED features combine
to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode
and the switching transistor. These FRED advantages
can help to significantly reduce snubbing, component
count and heatsink sizes. The FRED HFA16TB120
is ideally suited for applications in power supplies and
conversion systems (such as inverters), motor drives,
and many other similar applications where high speed,
high efficiency is needed.
h
1
Cathode
3
Anode
TO-220AC
PRODUCT SUMMARY
V
R
V
F
at
16A
at
25
ºC
I
F(AV)
t
rr
(typical)
T
J
(maximum)
Q
rr
(typical)
dI
(rec)M
/dt (typical)
at
125
ºC
I
RRM
(typical)
1200
V
3.0
V
16
A
30
ns
150
ºC
260
nC
76
A/µS
5.8
A
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
SYMBOL
V
R
I
F
I
FSM
I
FRM
P
D
T
J
, T
Stg
TEST CONDITIONS
VALUES
1200
UNITS
V
Tc
= 100
ºC
16
190
64
A
Tc
= 25
ºC
Tc
= 100
ºC
Maximum power dissipation
151
60
- 55
to
+ 150
W
°C
Operating junction and storage temperature range
www.nellsemi.com
Page 1 of 6
SEMICONDUCTOR
RoHS
N-HFA16TB120
RoHS
Nell High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
(T
J
= 25 ºC unless otherwise specified)
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Cathode to anode
breakdown voltage
V
BR
I
R
= 100
µA
I
F
= 16
A
1200
-
-
-
-
-
-
-
-
2.5
3.0
2.3
0.75
375
27
8.0
-
3.0
3.5
2.8
20
2000
40
-
µA
pF
nH
V
Maximum forward voltage
V
FM
I
F
= 32
A
I
F
= 16
A, T
J
= 125
ºC
Maximum reverse
leakage current
Junction capacitance
Series inductance
I
RM
C
T
L
S
V
R
= V
R
rated
T
J
= 125°C,
V
R
= V
R
rated
V
R
= 200V
Measured lead to lead
5
mm from package body
DYNAMIC RECOVERY CHARACTERISTICS PERLEG
PARAMETER
SYMBOL
(T
J
= 25 ºC unless otherwise specified)
MIN.
TYP.
MAX.
UNITS
TEST CONDITIONS
t
rr
Reverse recovery time
t
rr1
t
rr2
Peak recovery current
I
RRM1
I
RRM2
Reverse recovery charge
Peak rate of fall of recovery
current during t
b
I
F
= 0.5A, I
R
= 1.0A, I
RR
= 250mA (RG#1 CKT)
I
F
= 1.0
A, dI
F
/dt = -200 A/µs, V
R
=30 V, T
J
= 25°C
T
J
= 25
ºC
T
J
= 125
ºC
T
J
= 25
ºC
T
J
= 125
ºC
T
J
= 25
ºC
T
J
= 125
ºC
T
J
= 25
ºC
T
J
= 125
ºC
I
F
= 16A
dI
F
/dt = -200 A/µs
V
R
= 200 V
-
-
-
-
-
-
-
-
-
-
28
30
90
164
5.8
8.3
260
680
120
76
35
-
ns
135
245
10
15
675
1838
-
-
A/µs
nC
A
Q
rr1
Q
rr2
dl
(rec)M
/dt1
dl
(rec)M
/dt2
THERMAL
-
MECHANICAL SPECIFICATIONS
PARAMETER
Lead temperature
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
Case style TO-220AC
SYMBOL
T
lead
R
thJC
R
thJA
R
thCS
TEST CONDITIONS
0.063"
from case
(1.6
mm) for
10
s
MIN.
-
-
TYP.
-
-
-
0.50
2.0
0.07
-
MAX.
300
0.83
80
-
-
-
12
(10)
UNITS
ºC
Typical socket mount
Mounting surface, flat, smooth and greased
-
-
-
-
6.0
(5.0)
K/W
g
oz.
kgf
.
cm
(lbf .
in)
HFA16TB120
www.nellsemi.com
Page 2 of 6
SEMICONDUCTOR
RoHS
N-HFA16TB120
RoHS
Nell High Power Products
Fig.9 Reverse Recovery Parameter Test Circuit
V
R
= 200
V
0.01
Ω
L
= 70
µH
D.U.T.
dIF
/dt
adjust
D
G
IRFP250
S
Fig.10 Reverse Recovery Waveform and Definitions
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5
I
RRM
dI
(rec)M
/dt
(5)
0.75
I
RRM
(1)
dI
F
/dt
(1)
dIF
/dt -
rate of change of current
through zero crossing
(2)
I
RRM
-
peak reverse recovery current
(3)
trr
-
reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through
0.75
I
RRM
and
0.50
I
RRM
extrapolated to zero current.
(4)
Q
rr
-
area under curve defined by trr
and IRRM
t rrx I RRM
Qrr
=
2
(5)
dI
(rec)M
/
dt
-
peak rate of change of
current during tb portion of t
rr
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Page 5 of 6
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