SEMICONDUCTOR
N-30EPU12 Series
FRED
Ultrafast Soft Recovery Diode, 30 A
RoHS
RoHS
Nell High Power Products
FEATURES
Ultrafast recovery
175°C operating junction temperature
Designed and qualified for industrial level
Compliant to RoHS
N-30EPU12
N-30APU12
-
BENEFITS
Reduced RFI and EMI
Higher frequency operation
Reduced snubbing
Reduced parts count
Cathode
to base
2
Cathode
to base
2
DESCRIPTION/APPLICATIONS
These diodes are optimized to reduce losses and EMI /
R FI in high frequency power conditioning systems.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for HF welding, power converters and other
applications where switching losses are not significant
portion of the total losses.
1
Cathode
3
Anode
1
Anode
3
Anode
TO-247AC modified
TO-247AB
PRODUCT SUMMARY
t
rr
I
F(AV)
V
R
26
ns
30
A
1200
V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Continuous forward current
Single pulse forward current
Operating junction and storage temperatures
SYMBOL
V
R
l
F(AV)
l
FSM
T
j
, T
Stg
T
C
= 100
°C
T
C
= 25
°C
TEST CONDITIONS
VALUES
1200
30
280
- 55
to
175
UNITS
V
A
°C
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
(T
J
= 25
ºC unless otherwise specified)
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Breakdown voltage,
blocking voltage
V
BR,
V
r
l
R
= 100µA
l
F
= 30A
1200
-
-
-
-
-
-
2.7
3.4
2.0
-
-
-
3.3
-
-
100
500
-
pF
µA
V
Forward voltage
V
F
l
F
= 60A
l
F
= 30A, T
J
= 125°C
Reverse leakage current
Junction capacitance
l
R
C
T
V
R
= V
R
rated
T
J
= 150°C, V
R
= V
R
rated
V
R
= 200V
-
36
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Page 1 of 6
SEMICONDUCTOR
N-30EPU12 Series
RoHS
RoHS
Nell High Power Products
DYNAMIC RECOVERY CHARACTERISTICS
PARAMETER
SYMBOL
(T
J
= 25
ºC unless otherwise specified)
MIN.
TYP.
MAX.
UNITS
TEST CONDITIONS
I
F
= 0.5A, I
R
= 1A, I
RR
=0.25A (RG#1 CKT)
Reverse recovery time
t
rr
I
F
= 1A, dI
F
/dt = -100 A/µs, V
R
=30V, T
J
=25°C
T
J
= 25°C
T
J
= 125°C
Peak recovery current
l
RRM
Q
rr
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
I
F
= 30
A
dI
F
/dt = -200
A/µs
V
R
= 800
V
-
-
-
-
-
-
-
-
55
26
320
435
4
9
545
2100
60
-
-
-
-
-
-
-
A
ns
Reverse recovery charge
nC
THERMAL
-
MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Thermal resistance,
junction to case
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
R
thJC
R
thCS
Mounting surface, flat, smooth
and greased
-
-
-
-
0.6
(5)
Case style TO-247AC modified
Case style TO-247AB
0.5
0.4
5.5
0.2
-
30EPU12
30APU12
0.8
°C/W
-
-
-
1.2
(10)
g
oz.
N⋅ m
(lbf .
in)
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Page 2 of 6
SEMICONDUCTOR
N-30EPU12 Series
RoHS
RoHS
Nell High Power Products
Fig.1 Maximum effective transient thermal impedance, junction-to-case vs. pulse duration
0.90
Thermal impedance(°C/W), Z
θJC
0.80
0.70
0.60
0.50
0.40
0.30
0.20
0.10
0
10
-5
D=0.9
0.7
0.5
Note:
P
DM
t
1
t
2
0.3
SINGLE PULSE
Duty Factor D =t
1
/t
2
Peak T
J
= P
DM
xZ
θJC
+T
C
0.1
0.05
10
-4
10
-3
10
-2
10
-1
1.0
Rectangular pulse duration (seconds)
Fig.2 Forward current vs. forward voltage
200
180
160
Fig.3 Reverse recovery time vs. current rate of change
600
500
400
30A
300
15A
200
100
0
T
J
=125°C
V
R
=800V
60A
140
120
100
80
60
40
T
J
=175°C
T
J
=125°C
T
J
=25°C
T
J
=-55°C
20
0
0
1
2
3
4
5
0
200
400
600
800
1000
1200
Anode-to-cathode voltage (V), V
F
Reverse recovery time, t
rr
(ns)
Forward current, I
F
(A)
Current rate of change(A/μs), -di
F
/dt
Fig.4 Reverse recovery charge vs. current rate of change
5000
Fig 5. Reverse recovery current vs. current rate of change
35
Reverse recovery charge, Q
rr
60A
Reverse recovery current, I
RRM
T
J
=125°C
V
R
=800V
T
J
=125°C
V
R
=800V
30
60A
25
30A
(A)
20
15
15A
10
5
0
4000
3000
(nC)
30A
2000
15A
1000
0
0
200
400
600
800
1000
1200
Current rate of change (A/μs), -di
F
/dt
0
200
400
600
800
1000
1200
Current rate of change (A/μs), -di
F
/dt
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Page 3 of 6
SEMICONDUCTOR
N-30EPU12 Series
RoHS
RoHS
Nell High Power Products
Fig6. Dynamic parameters vs. junction temperature
1.2
Qrr
Fig.7 Maximum average forward current vs. case temperature
50
Dynamic parameters, K f
(Normalized to 1000A/µs)
1.0
trr
0.8
0.6
I
RRM
trr
45
40
35
Duty cycle = 0.5
T
J
=175°C
l
F(AV)
(A)
Qrr
30
25
20
15
10
5
0.4
0.2
0.0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
175
Junction temperature (°C),T
J
Case temperature (°C)
Fig.8 Junction capacitance vs. reverse voltage
200
180
Junction capacitance, C
J
160
140
120
(pF)
100
80
60
40
20
0
1
10
reverse voltage (V), V
R
100
200
Ordering Information Tabel
Device code
N
1
1
2
3
4
5
6
-
-
-
-
-
-
Nell
-
30
2
E
3
P
4
U
5
12
Current rating
Single Diode
TO-247
(30 = 30A)
E = 2 pins
A = 3 pins
Ultrafast Recovery
Voltage Rating
(12 = 1200
V)
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Page 4 of 6
SEMICONDUCTOR
N-30EPU12 Series
RoHS
RoHS
Nell High Power Products
Fig.9 Reverse recovery parameter test circuit
Fig.10 Reverse recovery waveform and definitions
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Page 5 of 6
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