VS-MURB1620CTPbF, VS-MURB1620CT-1PbF
Vishay High Power Products
Ultrafast Rectifier, 2 x 8 A FRED Pt
®
FEATURES
VS-MURB1620CTPbF
VS-MURB1620CT-1PbF
• Ultrafast recovery time
• Low forward voltage drop
• Low leakage current
• 175 °C operating junction temperature
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Halogen-free according to IEC 61249-2-21
definition
• Compliant to RoHS directive 2002/95/EC
• AEC-Q101 qualified
Base
common
cathode
2
Base
common
cathode
2
1
2
3
Anode
2
1
2
3
Anode
2
Anode Common
1 cathode
Anode Common
1 cathode
DESCRIPTION/APPLICATIONS
MUR.. series are the state of the art ultrafast recovery
rectifiers specifically designed with optimized performance
of forward voltage drop and ultrafast recovery time.
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
These devices are intended for use in the output rectification
stage of SMPS, UPS, dc-to-dc converters as well as
freewheeling diode in low voltage inverters and chopper
motor drives.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
D
2
PAK
TO-262
PRODUCT SUMMARY
t
rr
I
F(AV)
V
R
25 ns
2x8A
200 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
per leg
total device
SYMBOL
V
RRM
I
F(AV)
I
FSM
I
FM
T
J
, T
Stg
Rated V
R
, square wave, 20 kHz, T
C
= 150 °C
Rated V
R
, T
C
= 150 °C
TEST CONDITIONS
MAX.
200
8.0
16
100
16
- 65 to 175
°C
A
UNITS
V
Non-repetitive peak surge current per leg
Peak repetitive forward current per leg
Operating junction and storage temperatures
ELECTRICAL SPECIFICATIONS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
V
BR
,
V
R
V
F
I
R
C
T
L
S
I
R
= 100 μA
I
F
= 8 A
I
F
= 8 A, T
J
= 150 °C
V
R
= V
R
rated
T
J
= 150 °C, V
R
= V
R
rated
V
R
= 200 V
Measured lead to lead 5 mm from package body
TEST CONDITIONS
MIN.
200
-
-
-
-
-
-
TYP.
-
-
-
-
-
25
8.0
MAX.
-
0.975
0.895
5
250
-
-
μA
pF
nH
V
UNITS
Reverse leakage current
Junction capacitance
Series inductance
Document Number: 94519
Revision: 11-Mar-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
1
VS-MURB1620CTPbF, VS-MURB1620CT-1PbF
Vishay High Power Products
Ultrafast Rectifier,
2 x 8 A FRED Pt
®
DYNAMIC RECOVERY CHARACTERISTICS
(T
J
= 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 1.0 A, dI
F
/dt = 50 A/μs, V
R
= 30 V
Reverse recovery time
t
rr
I
F
= 0.5 A, I
R
= 1.0 A, I
REC
= 0.25 A
T
J
= 25 °C
T
J
= 125 °C
Peak recovery current
I
RRM
Q
rr
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
I
F
= 8 A
dI
F
/dt = 200 A/μs
V
R
= 160 V
MIN.
-
-
-
-
-
-
-
-
TYP.
-
-
20
34
1.7
4.2
23
75
MAX.
35
25
-
-
-
-
-
-
A
ns
UNITS
Reverse recovery charge
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and
storage temperature range
Thermal resistance,
junction to case per leg
Thermal resistance,
junction to ambient per leg
Thermal resistance,
case to heatsink
Weight
Mounting torque
Marking device
Case style D
2
PAK
Case style TO-262
SYMBOL
T
J
, T
Stg
R
thJC
R
thJA
R
thCS
Mounting surface, flat, smooth and
greased
TEST CONDITIONS
MIN.
- 65
-
-
-
-
-
6.0
(5.0)
TYP.
-
-
-
0.5
2.0
0.07
-
MAX.
175
3.0
50
-
-
-
12
(10)
g
oz.
kgf · cm
(lbf · in)
°C/W
UNITS
°C
MURB1620CT
MURB1620CT-1
www.vishay.com
2
For technical questions, contact:
diodestech@vishay.com
Document Number: 94519
Revision: 11-Mar-10
VS-MURB1620CTPbF, VS-MURB1620CT-1PbF
Ultrafast Rectifier,
2 x 8 A FRED Pt
®
I
F
- Instantaneous Forward Current (A)
100
100
Vishay High Power Products
I
R
- Reverse Current (μA)
T
J
= 175 °C
10
T
J
= 150 °C
1
T
J
= 125 °C
T
J
= 100 °C
0.1
10
T
J
= 175 °C
T
J
= 150 °C
T
J
= 25 °C
1
0.01
T
J
= 25 °C
0.001
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
94519_02
50
100
150
200
250
94519_01
V
F
- Forward Voltage Drop (V)
V
R
- Reverse Voltage (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Fig. 1 - Typical Forward Voltage Drop Characteristics
1000
C
T
- Junction Capacitance (pF)
100
T
J
= 25 °C
10
1
94519_03
10
100
1000
V
R
- Reverse Voltage (V)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
Z
thJC
- Thermal Impedance (°C/W)
10
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
P
DM
t
1
t
2
0.1
Single
pulse
(thermal resistance)
Notes:
1. Duty factor D = t
1
/t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.01
0.1
1
0.01
0.00001
0.0001
0.001
94519_04
t
1
- Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance Z
thJC
Characteristics
Document Number: 94519
Revision: 11-Mar-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
3
VS-MURB1620CTPbF, VS-MURB1620CT-1PbF
Vishay High Power Products
180
Ultrafast Rectifier,
2 x 8 A FRED Pt
®
60
V
R
= 160 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 30 A
I
F
= 15 A
I
F
= 8 A
Allowable Case Temperature (°C)
170
DC
50
150
Square
wave (D = 0.50)
Rated V
R
applied
See
note (1)
130
0
3
6
9
12
t
rr
(ns)
160
40
30
140
20
10
100
94519_07
1000
94519_05
I
F(AV)
- Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
10
dI
F
/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dI
F
/dt
200
V
R
= 160 V
T
J
= 125 °C
T
J
= 25 °C
I
F
= 30 A
I
F
= 15 A
I
F
= 8 A
Average Power Loss (W)
8
160
RMS limit
D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50
DC
0
3
6
9
12
4
Q
rr
(nC)
6
120
80
2
40
0
94519_06
0
100
94519_08
1000
I
F(AV)
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
dI
F
/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dI
F
/dt
Note
(1)
Formula used: T = T - (Pd + Pd
C
J
REV
) x R
thJC
;
Pd = Forward power loss = I
F(AV)
x V
FM
at (I
F(AV)
/D) (see fig. 6);
Pd
REV
= Inverse power loss = V
R1
x I
R
(1 - D); I
R
at V
R1
= Rated V
R
www.vishay.com
4
For technical questions, contact:
diodestech@vishay.com
Document Number: 94519
Revision: 11-Mar-10
VS-MURB1620CTPbF, VS-MURB1620CT-1PbF
Ultrafast Rectifier,
2 x 8 A FRED Pt
®
V
R
= 200 V
Vishay High Power Products
0.01
Ω
L = 70 μH
D.U.T.
dI
F
/dt
adjust
D
G
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
I
F
0
t
rr
t
a
t
b
Q
rr
(2)
(4)
I
RRM
0.5 I
RRM
dI
(rec)M
/dt
(5)
0.75 I
RRM
(1)
dI
F
/dt
(1) dI
F
/dt - rate of change of current
through zero crossing
(2) I
RRM
- peak reverse recovery current
(3) t
rr
- reverse recovery time measured
from zero crossing point of negative
going I
F
to point where a line passing
through 0.75 I
RRM
and 0.50 I
RRM
extrapolated to zero current.
(4)
Q
rr
- area under curve defined by t
rr
and I
RRM
Q
rr
=
t
rr
x I
RRM
2
(5) dI
(rec)M
/dt - peak rate of change of
current during t
b
portion of t
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 94519
Revision: 11-Mar-10
For technical questions, contact:
diodestech@vishay.com
www.vishay.com
5
ARM技术
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
