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MUR1100

产品描述1 A, SILICON, SIGNAL DIODE, DO-41
产品类别半导体    分立半导体   
文件大小120KB,共2页
制造商FRONTIER
官网地址http://www.frontierusa.com/
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MUR1100概述

1 A, SILICON, SIGNAL DIODE, DO-41

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Frontier Electronics Corp.
667 E. COCHRAN STREET, SIMI VALLEY, CA 93065
TEL: (805) 522-9998
FAX: (805) 522-9989
E-mail:
frontiersales@frontierusa.com
Web:
http://www.frontierusa.com
1A ULTRA FAST EFFICIENT RECTIFIER
MUR105 THRU MUR1100
FEATURES
LOW POWER LOSS, HIGH EFFICIENCY
LOW LEAKAGE
LOW FORWARD VOLTAGE DROP
HIGH CURRENT CAPABILITY
HIGH SPEED SWITCHING
HIGH RELIABILITY
HIGH CURRENT SURGE
GLASS PASSIVATED CHIP JUNCTION
MECHANICAL DATA
CASE: MOLDED PLASTIC, DO41, DIMENSIONS IN INCHES
AND (MILLIMETERS)
EPOXY: UL 94V-0 RATE FLAME RETARDANT
LEAD: MIL-STD-202E METHOD 208C GUARANTEED
MOUNTING POSITION: ANY
WEIGHT: 0.34 GRAMS
1.0(25.4)
MIN
.034(0.9)
.028(0.7)
.205(5.2)
.166(4.2)
.107(2.7)
.080(2.0)
1.0(25.4)
MIN
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATINGS AT 25°C AMBIENT TEMPERATURE UNLESS OTHERWISE SPECIFIED
SINGLE PHASE, HALF WAVE, 60 HZ, RESISTIVE OR INDUCTIVE LOAD. FOR CAPACITIVE LOAD, DERATE CURRENT BY 20%
MUR MUR MUR MUR MUR MUR MUR MUR
UNITS
RATINGS
SYMBOL
105
110
115
120
140
160
180
1100
MAXIMUM RECURRENT PEAK REVERSE VOLTAGE
V
RRM
50
100
150
200
400
600
800
1000
V
MAXIMUM RMS VOLTAGE
V
RMS
35
70
105
140
280
480
560
700
V
MAXIMUM DC BLOCKING VOLTAGE
V
DC
50
100
150
200
400
600
800
1000
V
MAXIMUM AVERAGE FORWARD RECTIFIED CURRENT
I
O
1.0
A
0.375” (9.5mm) LEAD LENGTH AT TA=55°C
PEAK FORWARD SURGE CURRENT, 8.3ms SINGLE HALF
I
FSM
35
A
SINE-WAVE SUPERIMPOSED ON RATED LOAD
TYPICAL JUNCTION CAPACITANCE (NOTE 1)
C
J
70
PF
TYPICAL THERMAL RESISTANCE (NOTE 2)
STORAGE TEMPERATURE RANGE
OPERATING TEMPERATURE RANGE
R
θja
T
STG
T
OP
50
- 55 TO + 150
- 55 TO + 150
℃/W
ELECTRICAL CHARACTERISTICS (A
T
T
A
=25°C UNLESS OTHERWISE NOTED)
MUR
CHARACTERISTICS
SYMBOL
105
MAXIMUM FORWARD VOLTAGE AT I
O
DC
V
F
MAXIMUM REVERSE CURRENT AT 25℃
MAXIMUM REVERSE CURRENT AT 100℃
I
R
I
R
MUR MUR
110
115
0.875
2
MUR
120
MUR MUR
140
160
1.25
5
50
MUR MUR
UNITS
180
1100
1.75
V
μA
μA
MAXIMUM REVERSE RECOVERY TIME (NOTE 3)
T
RR
NOTE:
1. MEASURED AT 1 MHZ AND APPLIED REVERSE VOLTAGE 0F 4.0 VOLTS
3. REVERSE RECOVERY TEST CONDITIONS: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
25
50
75
nS
2. BOTH LEADS ATTACHED TO HEAT SINK 20×20×1t(mm) COPPER PLATE AT LEAD LENGTH 5mm
MUR105 THRU MUR1100
Page: 1

MUR1100相似产品对比

MUR1100 MUR105 MUR110 MUR115 MUR120 MUR140 MUR160 MUR180
描述 1 A, SILICON, SIGNAL DIODE, DO-41 SILICON, RECTIFIER DIODE, DO-41 SILICON, SIGNAL DIODE, DO-41 SILICON, RECTIFIER DIODE, DO-41 1 A, 200 V, SILICON, SIGNAL DIODE, DO-41 SILICON, RECTIFIER DIODE, DO-41 1 A, 600 V, SILICON, SIGNAL DIODE, DO-41 1 A, SILICON, SIGNAL DIODE, DO-41

 
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