Ordering number : ENA2236
NDFPD1N150C
N-Channel Power MOSFET
1500V, 0.1A, 150
Ω
, TO-220F-3FS
Features
•
On-resistance RDS(on)=100
Ω
(typ.)
•
Input Capacitance Ciss=80pF(typ.)
•
10V drive
http://onsemi.com
Specifications
Absolute Maximum Ratings
at Ta = 25°C
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10μs, duty cycle≤1%
Conditions
TO-220F-3FS
Ratings
1500
±30
0.1
0.2
2.0
Tc=25°C
20
150
- 55 to +150
Unit
V
V
A
A
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Electrical Characteristics
at Ta
=
25°C
Ratings
Parameter
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS=0.1A, VGS=0V
VDS=200V, VGS=10V, ID=0.1A
See Fig.1
43
280
4.2
0.7
2
0.8
1.5
ns
ns
nC
nC
nC
V
VDS=30V, f=1MHz
Conditions
min
ID=10mA, VGS=0V
VDS=1200V, VGS=0V
VGS=±30V, VDS=0V
VDS=10V, ID=1mA
VDS=20V, ID=50mA
ID=50mA, VGS=10V
2
0.1
100
80
9
2.5
8
13
150
1500
1
±100
4
typ
max
V
mA
nA
V
S
Ω
pF
pF
pF
ns
ns
Unit
ORDERING INFORMATION
See detailed ordering and shipping information on page 4 of this data sheet.
Semiconductor Components Industries, LLC, 2013
November, 2013
N1313 TKIM TC-00003052 No. A2236-1/5
NDFPD1N150C
Note on usage : Since the NDFPD1N150C is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number
of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at
www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no
warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the
application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental
damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual
performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical
experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use
as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in
which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for
any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors
harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or
death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the
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PS No.A2236-5/5
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