HRP55N10K
December 2014
BV
DSS
= 100 V
HRP55N10K
100V N-Channel Trench MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Excellent Switching Characteristics
Unrivalled Gate Charge : 190 nC (Typ.)
Extended Safe Operating Area
Lower R
DS(ON)
: 4.5
mΩ
(Typ.) @V
GS
=10V
R
DS(on) typ
=
4.5mΩ
I
D
= 170 A
TO-220
1
2
3
1.Gate 2. Drain 3. Source
100% Avalanche Tested
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
E
AR
P
D
T
J
, T
STG
T
L
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
Gate-Source Voltage
T
C
=25℃ unless otherwise specified
Parameter
Value
100
Units
V
A
A
A
V
mJ
mJ
W
W/℃
℃
℃
– Continuous (T
C
= 25℃)
– Continuous (T
C
= 100℃)
– Pulsed
(Note 1)
170
120
420
±25
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Power Dissipation (T
C
= 25℃)
- Derate above 25℃
Operating and Storage Temperature Range
(Note 2)
(Note 1)
910
30
300
2.0
-55 to +175
300
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Thermal Resistance Characteristics
Symbol
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink
Junction-to-Ambient
Parameter
Typ.
--
0.5
--
Max.
0.5
--
62.5
℃/W
Units
◎
SEMIHOW REV.A0,December 2014
HRP55N10K
Electrical Characteristics
T
J
=25
°C
Symbol
Parameter
unless otherwise specified
Test Conditions
Min
Typ
Max
Units
On Characteristics
V
GS
R
DS(ON)
g
FS
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
V
DS
= V
GS
, I
D
= 250
㎂
V
GS
= 10 V, I
D
= 30 A
V
DS
= 20, I
D
= 30 A
2.0
--
--
--
4.5
100
3.6
5.5
--
V
mΩ
S
Off Characteristics
BV
DSS
I
DSS
I
GSS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
V
GS
= 0 V, I
D
= 250
㎂
V
DS
= 80 V, V
GS
= 0 V
V
DS
= 80 V, T
J
= 125℃
V
GS
=
±25
V, V
DS
= 0 V
100
--
--
--
--
--
--
--
--
1
100
±100
V
㎂
㎂
㎁
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
GS
= 0 V, V
DS
= 0 V, f = 1MHz
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
--
7900
880
540
2
--
--
--
--
㎊
㎊
㎊
Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DS
= 80 V, I
D
= 30 A,
V
GS
= 10 V
V
DS
= 50 V, I
D
= 30 A,
R
G
= 6
Ω
--
--
--
--
--
--
--
90
110
330
80
190
34
72
--
--
--
--
--
--
--
㎱
㎱
㎱
㎱
nC
nC
nC
Source-Drain Diode Maximum Ratings and Characteristics
I
S
I
SM
V
SD
trr
Qrr
Continuous Source-Drain Diode Forward Current
Pulsed Source-Drain Diode Forward Current
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
= 30 A, V
GS
= 0 V
I
S
= 30 A, V
GS
= 0 V
di
F
/dt = 100 A/μs
--
--
--
--
--
--
--
--
70
150
170
A
420
1.3
--
--
V
㎱
nC
Notes :
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L=1mH, I
AS
=33A, V
DD
=40V, R
G
=25Ω, Starting T
J
=25°C
◎
SEMIHOW REV.A0,December 2014
HRP55N10K
Typical Characteristics
I
D
, Drain Current [A]
10
2
I
D
, Drain Current [A]
V
GS
15 V
10 V
8V
7V
6V
5.5 V
5V
Bottom : 4.5 V
Top :
100
10
175
o
C
25
o
C
1
* Notes :
1. V
DS
= 20V
2. 300us Pulse Test
10
1
10
0
* Notes :
1. 300us Pulse Test
2. T
C
= 25
o
C
10
1
0.1
0
2
4
6
8
10
V
DS
, Drain-Source Voltage [V]
V
GS
, Gate-Source Voltage [V]
Figure 1. On Region Characteristics
Figure 2. Transfer Characteristics
7.0
V
GS
= 10V
I
DR
, Reverse Drain Current [A]
R
DS(ON)
[mΩ],
Drain-Source On-Resistance
6.5
6.0
5.5
5.0
4.5
4.0
∗
Note : T
J
= 25 C
o
100
10
1
175
o
C 25
o
C
* Notes :
1. V
GS
= 0V
2. 300us Pulse Test
3.5
0
50
100
150
200
250
300
350
400
0.1
0.0
0.4
0.8
1.2
1.6
2.0
I
D
, Drain Current [A]
V
SD
, Source-Drain Voltage [V]
Figure 3. On Resistance Variation vs
Drain Current and Gate Voltage
12000
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
C
iss
V
GS
, Gate-Source Voltage [V]
10000
10
Capacitances [pF]
8000
8
6000
* Note ;
1. V
GS
= 0 V
2. f = 1 MHz
6
4000
C
oss
C
rss
4
2000
2
V
DS
= 80V
I
D
= 30A
0
10
-1
0
10
0
10
1
0
30
60
90
120
150
180
210
V
DS
, Drain-Source Voltage [V]
Q
G
, Total Gate Charge [nC]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
◎
SEMIHOW REV.A0,December 2014
HRP55N10K
Typical Characteristics
(continued)
1.2
2.5
BV
DSS
, (Normalized)
Drain-Source Breakdown Voltage
R
DS(ON)
, (Normalized)
Drain-Source On-Resistance
2.0
1.1
1.5
1.0
1.0
0.9
∗
Note :
1. V
GS
= 0 V
2. I
D
= 250µA
0.5
∗
Note :
1. V
GS
= 10 V
2. I
D
= 30 A
0.8
-100
-50
0
50
100
150
200
0.0
-100
-50
0
50
100
o
150
200
T
J
, Junction Temperature [
o
C]
T
J
, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs Temperature
180
Figure 8. On-Resistance Variation
vs Temperature
10
3
Operation in This Area
is Limited by R
DS(on)
100
µs
150
I
D
, Drain Current [A]
I
D
, Drain Current [A]
10
2
1 ms
10 ms
DC
120
10
1
90
10
0
* Notes :
1. T
C
= 25
o
C
2. T
J
= 175
o
C
3. Single Pulse
60
10
-1
30
10
-2 -1
10
10
0
10
1
10
2
0
25
50
75
100
125
o
150
175
V
DS
, Drain-Source Voltage [V]
T
C
, Case Temperature [ C]
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs Case Temperature
10
0
Z
θJC
(t), Thermal Response
D=0.5
10
-1
0.2
0.1
0.05
0.02
0.01
* Notes :
1. Z
θJC
(t) = 0.5
o
C/W Max.
2. Duty Factor, D=t
1
/t
2
3. T
JM
- T
C
= P
DM
* Z
θJC
(t)
P
DM
single pulse
10
-2
t
1
10
-2
10
-1
t
2
10
1
10
-5
10
-4
10
-3
10
0
t
1
, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
◎
SEMIHOW REV.A0,December 2014
HRP55N10K
Fig 12. Gate Charge Test Circuit & Waveform
50KΩ
12V
200nF
300nF
Same Type
as DUT
V
DS
V
GS
Q
g
10V
V
GS
Q
gs
Q
gd
DUT
3mA
Charge
Fig 13. Resistive Switching Test Circuit & Waveforms
V
DS
R
G
R
L
V
DD
( 0.5 rated V
DS
)
V
DS
90%
10V
DUT
V
in
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
L
V
DS
V
DD
I
D
R
G
DUT
V
DD
BV
DSS
I
AS
BV
DSS
1
E
AS
= ---- L
L
I
AS2
--------------------
2
BV
DSS
-- V
DD
I
D
(t)
V
DS
(t)
t
p
10V
Time
◎
SEMIHOW REV.A0,December 2014
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
