MMDT5210W…MMDT521ZW
NPN Silicon Epitaxial Planar Digital Transistor
Collector
(Output)
Base
(Input)
R1
R2
Emitter
(Common)
Resistance Values
Type
MMDT5210W
MMDT5211W
MMDT5212W
MMDT5213W
MMDT5214W
MMDT5215W
MMDT5216W
MMDT5217W
MMDT5218W
MMDT5219W
R1 (KΩ)
47
10
22
47
10
10
4.7
22
0.51
1
R2 (KΩ)
-
10
22
47
47
-
-
-
5.1
10
Type
MMDT521DW
MMDT521EW
MMDT521FW
MMDT521KW
MMDT521LW
MMDT521MW
MMDT521NW
MMDT521TW
MMDT521VW
MMDT521ZW
R1 (KΩ)
47
47
4.7
10
4.7
2.2
4.7
22
2.2
4.7
R2 (KΩ)
10
22
10
4.7
4.7
47
47
47
2.2
22
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
V
CBO
V
CEO
I
C
P
tot
T
j
T
S
Value
50
50
100
200
150
- 55 to + 150
Unit
V
V
mA
mW
O
C
C
O
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 06/06/2007
MMDT5210W…MMDT521ZW
Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at V
CE
= 10 V, I
C
= 5 mA
MMDT5218/521K/521L/521VW
MMDT5219/521D/521FW
MMDT5211W
MMDT5212/521EW
MMDT521ZW
MMDT5213/5214/521MW
MMDT521N/521TW
1)
MMDT5210/5215/5216/5217W
Symbol
Min.
20
30
35
60
60
80
80
160
-
-
-
-
-
-
-
-
-
50
50
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
250
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-
200
-
400
460
100
0.01
0.1
0.2
0.4
0.5
1
1.5
2
-
-
0.3
-
3
2.5
2.5
5
4
3
3
3
1.1
1.7
1.3
1.4
Unit
-
-
-
-
-
-
-
-
nA
h
FE
Collector Base Cutoff Current
at V
CB
= 50 V
Emitter Base Cutoff Current
at V
EB
= 6 V
MMDT5210/5215/5216/5217W
MMDT5213W
MMDT5212/5214/521D/521E/521M/521N/521TW
I
CBO
MMDT521ZW
MMDT5211W
MMDT521F/521KW
MMDT5219W
MMDT5218/521L/521VW
Collector Base Breakdown Voltage
at I
C
= 10 µA
Collector Emitter Breakdown Voltage
at I
C
= 2 mA
Collector Emitter Saturation Voltage
at I
C
= 10 mA, I
B
= 0.5 mA
Transition Frequency
at V
CB
= 10 V, -I
E
= 5 mA, f = 100 MHz
Input Voltage (ON)
at V
O
= 0.3 V, I
O
= 20 mA
MMDT521V/521L/5219/5218W
at V
O
= 0.3 V, I
O
= 20 mA
MMDT521FW
at V
O
= 0.3 V, I
O
= 2 mA
MMDT521TW
at V
O
= 0.3 V, I
O
= 2 mA
MMDT521DW
at V
O
= 0.3 V, I
O
= 2 mA
MMDT521EW
at V
O
= 0.3 V, I
O
= 10 mA
MMDT5211W
at V
O
= 0.2 V, I
O
= 5 mA
MMDT5212W
at V
O
= 0.3 V, I
O
= 2 mA
MMDT5213/521KW
at V
O
= 0.3 V, I
O
= 5 mA
MMDT521MW
at V
O
= 0.2 V, I
O
= 5 mA
MMDT521ZW
at V
O
= 0.3 V, I
O
= 5 mA
MMDT521NW
at V
O
= 0.3 V, I
O
= 1 mA
MMDT5214W
1)
I
EBO
mA
V
(BR)CBO
V
(BR)CEO
V
CEsat
f
T
V
V
V
MHz
-V
I(ON)
V
h
FE
Rank Classification: Q: 160~260, R: 210~340, S: 290~460, No-rank: 160~460
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 06/06/2007
MMDT5210W…MMDT521ZW
Characteristics at T
a
= 25
O
C
Parameter
Input Voltage (OFF)
at V
CC
= 5 V, I
O
= 100 µA
MMDT521V/521L/5211/5212/5213W
MMDT5218/5219/521M/521Z/521NW
MMDT521F/5214W
MMDT521TW
MMDT521DW
MMDT521K/521EW
MMDT5218W
MMDT5219W
MMDT521M/521V
MMDT5216/521F/521L/521N/521ZW
MMDT5211/5214/5215/521KW
MMDT5212/5217/521TW
MMDT5210/5213/521D/521EW
MMDT521MW
MMDT521NW
MMDT5218/5219W
MMDT521ZW
MMDT5214W
MMDT521TW
MMDT521FW
MMDT521VW
MMDT5211/5212/5213/521LW
MMDT521KW
MMDT521EW
MMDT521DW
Symbol
Min.
0.5
0.5
0.3
0.4
1
0.8
Typ.
-
-
-
-
-
-
0.51
1
2.2
4.7
10
22
47
0.047
0.1
0.1
0.21
0.21
0.47
0.47
1
1
2.13
2.14
4.7
Max.
-
-
-
-
-
-
Unit
-V
I(OFF)
V
Input Resistance
R1
- 30%
+ 30%
KΩ
Resistance Ratio
R1/R2
-
-
0.08
-
0.17
-
0.37
-
0.8
1.7
1.7
3.7
-
-
0.12
-
0.25
-
0.57
-
1.2
2.6
2.6
5.7
-
-
-
-
-
-
-
-
-
-
-
-
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 06/06/2007
单片机
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
