MMDT5110W…MMDT511ZW
PNP Silicon Epitaxial Planar Digital Transistor
Collector
(Output)
Base
(Input)
R1
R2
Emitter
(Common)
Resistance Values
Type
MMDT5110W
MMDT5111W
MMDT5112W
MMDT5113W
MMDT5114W
MMDT5115W
MMDT5116W
MMDT5117W
MMDT5118W
MMDT5119W
R1 (KΩ)
47
10
22
47
10
10
4.7
22
0.51
1
R2 (KΩ)
-
10
22
47
47
-
-
-
5.1
10
Type
MMDT511DW
MMDT511EW
MMDT511FW
MMDT511HW
MMDT511LW
MMDT511MW
MMDT511NW
MMDT511TW
MMDT511VW
MMDT511ZW
R1 (KΩ)
47
47
4.7
2.2
4.7
2.2
4.7
22
2.2
4.7
R2 (KΩ)
10
22
10
10
4.7
47
47
47
2.2
22
Absolute Maximum Ratings (T
a
= 25
O
C)
Parameter
Collector Base Voltage
Collector Emitter Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
-V
CBO
-V
CEO
-I
C
P
tot
T
j
T
S
Value
50
50
100
200
150
- 55 to + 150
Unit
V
V
mA
mW
O
C
C
O
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 06/06/2007
MMDT5110W…MMDT511ZW
Characteristics at T
a
= 25
O
C
Parameter
DC Current Gain
at -V
CE
= 10 V, -I
C
= 5 mA
MMDT5118/511L/511VW
MMDT5119/511D/511F/511HW
MMDT5111W
MMDT5112/511EW
MMDT511ZW
MMDT5113/5114/511MW
MMDT511N/511TW
1)
MMDT5110/5115/5116/5117W
Symbol
Min.
20
30
35
60
60
80
80
160
-
-
-
-
-
-
-
-
-
50
50
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Max.
-
-
-
-
200
-
400
460
100
0.01
0.1
0.2
0.4
0.5
1
1.5
2
-
-
0.3
3
2.5
2.5
5
4
3
3
3
1.1
1.7
1.3
1.4
Unit
-
-
-
-
-
-
-
-
nA
h
FE
Collector Base Cutoff Current
at -V
CB
= 50 V
Emitter Base Cutoff Current
at -V
EB
= 6 V
MMDT5110/5115/5116/5117W
MMDT5113W
MMDT5112/5114/511D/511E/511M/511N/511TW
-I
CBO
MMDT511ZW
MMDT5111W
MMDT511F/511HW
MMDT5119W
MMDT5118/511L/511VW
Collector Base Breakdown Voltage
at -I
C
= 10 µA
Collector Emitter Breakdown Voltage
at -I
C
= 2 mA
Collector Emitter Saturation Voltage
at -I
C
= 10 mA, -I
B
= 0.5 mA
Input Voltage (ON)
at -V
O
= 0.3 V, -I
O
= 20 mA
at -V
O
= 0.3 V, -I
O
= 20 mA
at -V
O
= 0.3 V, -I
O
= 2 mA
at -V
O
= 0.3 V, -I
O
= 2 mA
at -V
O
= 0.3 V, -I
O
= 2 mA
at -V
O
= 0.3 V, -I
O
= 10 mA
at -V
O
= 0.2 V, -I
O
= 5 mA
at -V
O
= 0.3 V, -I
O
= 2 mA
at -V
O
= 0.3 V, -I
O
= 5 mA
at -V
O
= 0.2 V, -I
O
= 5 mA
at -V
O
= 0.3 V, -I
O
= 5 mA
at -V
O
= 0.3 V, -I
O
= 1 mA
1)
-I
EBO
mA
-V
(BR)CBO
-V
(BR)CEO
-V
CEsat
V
V
V
MMDT511V/511L/5119/511H/5118W
MMDT511FW
MMDT511TW
MMDT511DW
MMDT511EW
MMDT5111W
MMDT5112W
MMDT5113W
MMDT511MW
MMDT511ZW
MMDT511NW
MMDT5114W
-V
I(ON)
V
h
FE
Rank Classification: Q: 160~260, R: 210~340, S: 290~460, No-rank: 160~460
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 06/06/2007
MMDT5110W…MMDT511ZW
Characteristics at T
a
= 25
O
C
Parameter
Input Voltage (OFF)
at -V
CC
= 5 V, -I
O
= 100 µA
MMDT511V/511L/5111/5112/5113W
MMDT5118/5119/511M/511Z/511NW
MMDT511H/511F/5114W
MMDT511TW
MMDT511DW
MMDT511EW
Symbol
Min.
0.5
0.5
0.3
0.4
1
0.8
-
Typ.
-
-
-
-
-
-
250
0.51
1
2.2
4.7
10
22
47
0.047
0.1
0.1
0.21
0.21
0.47
0.47
1
1
0.22
2.14
4.7
Max.
-
-
-
-
-
-
-
Unit
-V
I(OFF)
V
Transition Frequency
at -V
CB
= 10 V, -I
E
= 5 mA, f = 100 MHz
Input Resistance
MMDT5118W
MMDT5119W
MMDT511H/511M/511VW
MMDT5116/511F/511L/511N/511ZW
MMDT5111/5114/5115W
MMDT5112/5117/511TW
MMDT5110/5113/511D/511EW
Resistance Ratio
MMDT511MW
MMDT511NW
MMDT5118/5119W
MMDT511ZW
MMDT5114W
MMDT511TW
MMDT511FW
MMDT511VW
MMDT5111/5112/5113/511LW
MMDT511HW
MMDT511EW
MMDT511DW
f
T
MHz
R1
- 30%
+ 30%
KΩ
R1/R2
-
-
0.08
-
0.17
-
0.37
-
0.8
0.17
1.7
3.7
-
-
0.12
-
0.25
-
0.57
-
1.2
0.27
2.6
5.7
-
-
-
-
-
-
-
-
-
-
-
-
SEMTECH ELECTRONICS LTD.
®
(Subsidiary
of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
Dated : 06/06/2007
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