MMBZ5225-V to MMBZ5267-V
Vishay Semiconductors
Small Signal Zener Diodes
Features
• Silicon Planar Power Zener Diodes.
• Standard Zener voltage tolerance is ± 5 %
e3
with a "B" suffix (e.g.: MMBZ5225B-V),
suffix “C” is ± 2 % tolerance.
• High temperature soldering guaranteed:
260 °C/4X10 seconds at terminals.
• These diodes are also available in MiniMELF case
with the type designation ZMM5225...ZMM5267,
SOD-123 case with the type designation
MMSZ5225-V... MMSZ5267-V.
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
3
1
2
18078
Mechanical Data
Case:
SOT-23 Plastic case
Weight:
approx. 8.8 mg
Packaging Codes/Options:
GS18 / 10 k per 13 " reel (8 mm tape), 10 k/box
GS08 / 3 k per 7 " reel (8 mm tape), 15 k/box
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Zener current (see Table
"Characteristics")
Power dissipation
T
A
= 25 °C
P
tot
P
tot
1)
2)
Test condition
Symbol
Value
Unit
225
1)
300
2)
mW
mW
On FR - 5 board using recommended solder pad layout
On alumina substrate
Thermal Characteristics
T
amb
= 25 °C, unless otherwise specified
Parameter
Thermal resistance junction to
ambient air
Maximum junction temperature
Storage temperature range
1)
Test condition
Symbol
R
thJA
T
j
T
S
Value
556
1)
150
-65 to + 175
Unit
°C/W
°C
°C
On FR - 5 board using recommended solder pad layout
Document Number 85772
Rev. 1.4, 21-Oct-05
www.vishay.com
1
MMBZ5225-V to MMBZ5267-V
Vishay Semiconductors
Electrical Characteristics
T
amb
= 25 ° unless otherwise noted
Maximum V
F
= 0.9 V at I
F
= 10 mA
Partnumber
Marking
Code
Nominal
Zener
Voltage
V
Z
@ I
ZT1
V
MMBZ5225-V
MMBZ5226-V
MMBZ5227-V
MMBZ5228-V
MMBZ5229-V
MMBZ5230-V
MMBZ5231-V
MMBZ5232-V
MMBZ5233-V
MMBZ5234-V
MMBZ5235-V
MMBZ5236-V
MMBZ5237-V
MMBZ5238-V
MMBZ5239-V
MMBZ5240-V
MMBZ5241-V
MMBZ5242-V
MMBZ5243-V
MMBZ5244-V
MMBZ5245-V
MMBZ5246-V
MMBZ5247-V
MMBZ5248-V
MMBZ5249-V
MMBZ5250-V
MMBZ5251-V
MMBZ5252-V
MMBZ5253-V
MMBZ5254-V
MMBZ5255-V
MMBZ5256-V
MMBZ5257-V
MMBZ5258-V
MMBZ5259-V
MMBZ5260-V
MMBZ5261-V
MMBZ5262-V
MMBZ5263-V
MMBZ5264-V
MMBZ5265-V
MMBZ5266-V
MMBZ5267-V
1)
The
Test
Current
Maximum Dynamic
Impedance
1)
Typical
Temp.
of
Coefficient
α
VZ
%/°C
-0.075
-0.07
-0.065
-0.06
-0.055
±0.030
±0.030
0.038
0.038
0.045
0.05
0.058
0.062
0.065
0.068
0.075
0.076
0.077
0.079
0.082
0.082
0.083
0.084
0.085
0.086
0.086
0.087
0.087
0.089
0.090
0.091
0.091
0.092
0.093
0.094
0.095
0.095
0.096
0.096
0.097
0.097
0.097
0.098
Maximum Reverse
Leakage Current
I
ZT1
mA
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
9.5
9
8.5
7.8
7.4
7
6.6
6.2
5.6
5.2
5
4.6
4.5
4.2
3.8
3.4
3.2
3
2.7
2.5
2.2
2.1
2
1.8
1.7
Z
ZT
@ I
ZT
Ω
30
28
24
23
22
19
17
11
7
7
5
6
8
8
10
17
22
30
13
15
16
17
19
21
23
25
29
33
35
41
44
49
58
70
80
93
105
125
150
170
185
230
270
Z
ZK
@ I
ZK
=
0.25 mA
Ω
1600
1600
1700
1900
2000
1900
1600
1600
1600
1000
750
500
500
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
600
700
700
800
900
1000
1100
1300
1400
1400
1600
1700
I
R
μA
50
25
15
10
5
5
5
5
5
5
3
3
3
3
3
3
2
1
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
R
V
1
1
1
1
1
2
2
3
3.5
4
5
6
6.5
6.5
7
8
8.4
9.1
9.9
10
11
12
13
14
14
15
17
18
19
21
21
23
25
27
30
33
36
39
43
46
47
52
56
18E
8A
8B
8C
8D
8E
8F
8G
8H
8J
8K
8L
8M
8N
8P
8Q
8R
8S
8T
8U
8V
8W
8X
8Y
8Z
81A
81B
81C
81D
81E
81F
81G
81H
81J
81K
18F
81M
81N
81P
81Q
81R
81S
81T
3
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6
6.2
6.8
7.5
8.2
8.7
9.1
10
11
12
13
14
15
16
17
18
19
20
22
24
25
27
28
30
33
36
39
43
47
51
56
60
62
68
75
Zener Impedance is derived from the 1 kHZ AC voltage which results when an AC current having an RMS value equal to 10 % of
the Zener current (I
ZT
or I
ZK
) is superimposed on I
ZT
or I
ZK
. Zener Impedance is measured at two points to insure a sharp knee on the
breakdown curve and to eliminate unstable units.
3)
Measured at thermal equilibrium.
Document Number 85772
Rev. 1.4, 21-Oct-05
www.vishay.com
2
MMBZ5225-V to MMBZ5267-V
Vishay Semiconductors
Typical Characteristics (Tamb = 25
°C
unless otherwise specified)
mA
10
3
10
2
°C/W
10
3
7
5
4
3
2
I
F
10
T
J
= 100 °C
1
10
-1
r
thA
0.5
0.2
0.1
0.05
0.02
0.01
=0
10
2
7
5
4
3
2
T
J
= 25 °C
10
-2
10
-3
10
7
5
4
3
2
tp
10
-4
10
-5
0
18114
tp
T
T
P
I
0.2
0.4
0.6
0.8
1
V
1
10
-5
18116
10
-4
10
-3
10
-2
10
-1
1
10 s
V
F
tp
Figure 1. Forward characteristics
Figure 4. Pulse Thermal Resistance vs. Pulse Duration
pF
1000
7
T
J
= 25 °C
V
R
= 1
V
V
R
= 2
V
C
tot
5
4
3
2
100
7
5
4
3
2
V
R
= 1
V
V
R
= 2
V
10
1
18118
2
3
4
5
10
2
3
4
5
100
V
V
Z
at I
Z
= 5 mA
Figure 2. Capacitance vs. Zener Voltage
mW
250
P
tot
200
150
100
50
0
0
18672
100
200 °C
T
amb
Figure 3. Admissible Power Dissipation vs. Ambient Temperature
Document Number 85772
Rev. 1.4, 21-Oct-05
www.vishay.com
3
MMBZ5225-V to MMBZ5267-V
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as
their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Document Number 85772
Rev. 1.4, 21-Oct-05
www.vishay.com
5
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