MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage
suppression
Rev. 01 — 3 September 2008
Product data sheet
1. Product profile
1.1 General description
Unidirectional double ElectroStatic Discharge (ESD) protection diodes in a common
cathode configuration, encapsulated in a SOT23 (TO-236AB) small Surface-Mounted
Device (SMD) plastic package. The devices are designed for ESD and transient
overvoltage protection of up to two signal lines.
Table 1.
Product overview
Package
NXP
MMBZ12VDL
MMBZ15VDL
MMBZ18VCL
MMBZ20VCL
MMBZ27VCL
MMBZ33VCL
[1]
All types available as /DG halogen-free version.
Type number
[1]
Configuration
JEDEC
TO-236AB
dual common cathode
SOT23
1.2 Features
I
Unidirectional ESD protection of
two lines
I
Bidirectional ESD protection of one line
I
Low diode capacitance: C
d
≤
140 pF
I
Rated peak pulse power: P
PPM
≤
40 W
I
Ultra low leakage current: I
RM
≤
5 nA
I
ESD protection up to 30 kV (contact
discharge)
I
IEC 61000-4-2; level 4 (ESD)
I
IEC 61643-321
I
AEC-Q101 qualified
1.3 Applications
I
Computers and peripherals
I
Audio and video equipment
I
Cellular handsets and accessories
I
Automotive electronic control units
I
Portable electronics
NXP Semiconductors
MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
1.4 Quick reference data
Table 2.
Quick reference data
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
RWM
reverse standoff voltage
MMBZ12VDL
MMBZ12VDL/DG
MMBZ15VDL
MMBZ15VDL/DG
MMBZ18VCL
MMBZ18VCL/DG
MMBZ20VCL
MMBZ20VCL/DG
MMBZ27VCL
MMBZ27VCL/DG
MMBZ33VCL
MMBZ33VCL/DG
C
d
diode capacitance
MMBZ12VDL
MMBZ12VDL/DG
MMBZ15VDL
MMBZ15VDL/DG
MMBZ18VCL
MMBZ18VCL/DG
MMBZ20VCL
MMBZ20VCL/DG
MMBZ27VCL
MMBZ27VCL/DG
MMBZ33VCL
MMBZ33VCL/DG
f = 1 MHz; V
R
= 0 V
-
-
-
-
-
-
110
85
70
65
48
45
140
105
90
80
60
55
pF
pF
pF
pF
pF
pF
-
-
-
-
-
-
-
-
-
-
-
-
8.5
12.8
14.5
17
22
26
V
V
V
V
V
V
Parameter
Conditions
Min
Typ
Max
Unit
2. Pinning information
Table 3.
Pin
1
2
3
Pinning
Description
anode (diode 1)
anode (diode 2)
common cathode
1
2
3
3
Simplified outline
Graphic symbol
1
2
006aaa150
MMBZXVCL_MMBZXVDL_SER_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 3 September 2008
2 of 15
NXP Semiconductors
MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
3. Ordering information
Table 4.
Ordering information
Package
Name
MMBZ12VDL
MMBZ15VDL
MMBZ18VCL
MMBZ20VCL
MMBZ27VCL
MMBZ33VCL
MMBZ12VDL/DG
MMBZ15VDL/DG
MMBZ18VCL/DG
MMBZ20VCL/DG
MMBZ27VCL/DG
MMBZ33VCL/DG
-
plastic surface-mounted package; 3 leads
SOT23
-
Description
plastic surface-mounted package; 3 leads
Version
SOT23
Type number
4. Marking
Table 5.
Marking codes
Marking code
[1]
*MA
*MB
*MC
*MD
*ME
*MF
Type number
MMBZ12VDL/DG
MMBZ15VDL/DG
MMBZ18VCL/DG
MMBZ20VCL/DG
MMBZ27VCL/DG
MMBZ33VCL/DG
Marking code
[1]
TJ*
TL*
TN*
TQ*
TS*
TU*
Type number
MMBZ12VDL
MMBZ15VDL
MMBZ18VCL
MMBZ20VCL
MMBZ27VCL
MMBZ33VCL
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
MMBZXVCL_MMBZXVDL_SER_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 3 September 2008
3 of 15
NXP Semiconductors
MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
P
PPM
I
PPM
rated peak pulse power
rated peak pulse current
MMBZ12VDL
MMBZ12VDL/DG
MMBZ15VDL
MMBZ15VDL/DG
MMBZ18VCL
MMBZ18VCL/DG
MMBZ20VCL
MMBZ20VCL/DG
MMBZ27VCL
MMBZ27VCL/DG
MMBZ33VCL
MMBZ33VCL/DG
Per device
P
tot
T
j
T
amb
T
stg
[1]
[2]
[3]
[4]
Parameter
Conditions
t
p
= 10/1000
µs
t
p
= 10/1000
µs
[1][2]
[1][2]
Min
-
-
-
-
-
-
-
Max
40
2.35
1.9
1.6
1.4
1
0.87
Unit
W
A
A
A
A
A
A
total power dissipation
junction temperature
ambient temperature
storage temperature
T
amb
≤
25
°C
[3]
[4]
-
-
-
−55
−65
350
440
150
+150
+150
mW
mW
°C
°C
°C
In accordance with IEC 61643-321 (10/1000
µs
current waveform).
Measured from pin 1 or 2 to pin 3.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Table 7.
ESD maximum ratings
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
ESD
electrostatic discharge voltage
IEC 61000-4-2
(contact discharge)
machine model
[1]
[2]
Device stressed with ten non-repetitive ESD pulses.
Measured from pin 1 or 2 to pin 3.
[1][2]
Parameter
Conditions
Min
Max
Unit
-
-
30
2
kV
kV
MMBZXVCL_MMBZXVDL_SER_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 3 September 2008
4 of 15
NXP Semiconductors
MMBZxVCL; MMBZxVDL series
Double ESD protection diodes for transient overvoltage suppression
ESD standards compliance
Conditions
> 15 kV (air); > 8 kV (contact)
> 8 kV
Table 8.
Standard
Per diode
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
001aaa631
150
I
PP
(%)
100
100 % I
PP
; 10
µs
006aab319
I
PP
100 %
90 %
50 % I
PP
; 1000
µs
50
10 %
t
r
=
0.7 ns to 1 ns
0
1.0
2.0
3.0
t
p
(ms)
4.0
30 ns
60 ns
t
0
Fig 1.
10/1000
µs
pulse waveform according to
IEC 61643-321
Fig 2.
ESD pulse waveform according to
IEC 61000-4-2
6. Thermal characteristics
Table 9.
Symbol
Per device
R
th(j-a)
R
th(j-sp)
[1]
[2]
[3]
Thermal characteristics
Parameter
Conditions
[1]
[2]
[3]
Min
-
-
-
Typ
-
-
-
Max
350
280
60
Unit
K/W
K/W
K/W
thermal resistance from junction in free air
to ambient
thermal resistance from junction
to solder point
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm
2
.
Soldering point at pin 3.
MMBZXVCL_MMBZXVDL_SER_1
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 01 — 3 September 2008
5 of 15
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