MMBT6028
Silicon programmable unijunction transistors (PUT′s)
in package SOT-23
0.5 max
3
2.55 max
1.4 max
1.9
3.1 max
1.2 max
1
2
Pinouts:
1- Anode, 2- Gate, 3- Cathode
Ratings (T
A
= 25°C)
Symbol
V
AK
V
GKF
V
GKR
V
GAR
I
T
I
TRM
Parameter, units
*Anode to cathode voltage, V
*Gate to cathode forward voltage, V
*Gate to cathode reverse voltage, V
*Gate to anode reverse voltage, V
*DC forward anode current, mA
Repetitive peak forward current, A
100µs Pulse width, 1% duty cycle
*20µs Pulse width, 1% duty cycle
*Power dissipation, mW
*
- Anode positive, R
GA
=1000Ω;
Anode negative, R
GA
=open
Limits
±
40
40
-5
40
150
1
2
300
P
T
Electrical Characteristics (T
A
= 25°C)
Symbol
I
P
I
GAO
I
GKS
V
F
V
O
V
T
I
V
t
R
Parameter, units,
test conditions
Peak current,
µA,
V
S
=10V, R
G
=10kΩ
Gate to anode leakage current, nA,
V
S
=40V, cathode open
Gate to cathode leakage current, nA,
V
S
=40V, anode to cathode shorted
Forward voltage, V,
I
F
=50mA Peak
Peak output voltage, V,
V
G
=20V, C
C
=0.2
µF
Offset voltage, V
V
S
=10V, R
G
=10kΩ
Valley current,
µA,
V
S
=10V, R
G
=10kΩ
Pulse voltage rise time, ns
U
B
=20V, C
C
=0.2
µF
min
Limits
typ
0.7
1
5
0.8
max
1
10
50
1.5
6
0.2
25
11
0.35
150
40
80
0.6
Planeta
Electronic
company
JSC Planeta, 2/13, Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia
Ph/Fax:
+7 (81622) 3-17-36, 3-32-86
E-mail:
planeta@novgorod.net
http://www.novgorod.net/~planeta
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