DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
MMBT3906
PNP switching transistor
Product data sheet
Supersedes data of 2000 Apr 11
2003 Mar 18
NXP Semiconductors
Product data sheet
PNP switching transistor
FEATURES
•
Collector current capability I
C
=
−200
mA
•
Collector-emitter voltage V
CEO
=
−40
V.
APPLICATIONS
•
General switching and amplification.
DESCRIPTION
PNP switching transistor in a SOT23 plastic package.
NPN complement: MMBT3904.
MARKING
TYPE NUMBER
MMBT3906
Note
1.
∗
= p: Made in Hong Kong.
∗
= t: Made in Malaysia.
∗
= W: Made in China.
Top view
MMBT3906
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
C
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
PARAMETER
collector-emitter voltage
collector current (DC)
MAX.
−40
−200
UNIT
V
mA
MARKING CODE
(1)
7B∗
handbook, halfpage
3
3
1
2
1
2
MAM256
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
−40
−40
−6
−200
−200
−100
250
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT
2003 Mar 18
2
NXP Semiconductors
Product data sheet
PNP switching transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
=
−30
V
I
C
= 0; V
EB
=
−6
V
V
CE
=
−1
V; see Fig.2
I
C
=
−0.1
mA
I
C
=
−1
mA
I
C
=
−10
mA
I
C
=
−50
mA
I
C
=
−100
mA
V
CEsat
V
BEsat
C
c
C
e
f
T
F
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
I
C
=
−10
mA; I
B
=
−1
mA
I
C
=
−50
mA; I
B
=
−5
mA
I
C
=
−10
mA; I
B
=
−1
mA
I
C
=
−50
mA; I
B
=
−5
mA
I
E
= i
e
= 0; V
CB
=
−5
V; f = 1 MHz
I
C
= i
c
= 0; V
EB
=
−500
mV;
f = 1 MHz
I
C
=
−10
mA; V
CE
=
−20
V;
f = 100 MHz
I
C
=
−100 µA;
V
CE
=
−5
V;
R
S
= 1 kΩ; f = 10 Hz to 15.7 kHz
I
Con
=
−10
mA; I
Bon
=
−1
mA;
I
Boff
= 1 mA
60
80
100
60
30
−
−
−
−
−
−
250
−
−
−
−
−
MIN.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
500
MMBT3906
UNIT
K/W
MAX.
−50
−50
UNIT
nA
nA
300
−
−
−250
−400
−850
−950
4.5
10
−
4
mV
mV
mV
mV
pF
pF
MHz
dB
Switching times (between 10% and 90% levels);
see Fig.7
t
d
t
r
t
s
t
f
delay time
rise time
storage time
fall time
−
−
−
−
35
35
225
75
ns
ns
ns
ns
2003 Mar 18
3
NXP Semiconductors
Product data sheet
PNP switching transistor
MMBT3906
handbook, halfpage
600
MHC459
hFE
(1)
−250
handbook, halfpage
IC
(mA)
−200
MHC460
(3)
(2)
(1)
(4)
400
−150
(5)
(6)
(7)
(2)
−100
(8)
200
(3)
(9)
−50
(10)
0
−10
−1
−1
−10
−10
2
−10
3
IC (mA)
(1)
(2)
(3)
(4)
0
0
−2
−4
−6
−8
−10
VCE (V)
T
amb
= 25
°C.
V
CE
=
−1
V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
I
B
=
−1.5
mA.
I
B
=
−1.35
mA.
I
B
=
−1.2
mA.
I
B
=
−1.05
mA.
(5) I
B
=
−0.9
mA.
(6) I
B
=
−0.75
mA.
(7) I
B
=
−0.6
mA.
(8) I
B
=
−0.45
mA.
(9) I
B
=
−0.3
mA.
(10) I
B
=
−0.15
mA.
Fig.3
Fig.2 DC current gain; typical values.
Collector current as a function of
collector-emitter voltage.
handbook, halfpage
−1200
VBE
(mV)
−1000
MHC461
handbook, halfpage
−1200
VBEsat
(mV)
−1000
MHC462
(1)
(1)
−800
(2)
−800
(2)
−600
(3)
−600
(3)
−400
−400
−200
−10
−1
−1
−10
−10
2
−10
3
IC (mA)
−200
−10
−1
−1
−10
−10
2
−10
3
IC (mA)
V
CE
=
−1
V.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
I
C
/I
B
= 10.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
Fig.4
Base-emitter voltage as a function of
collector current.
Fig.5
Base-emitter saturation voltage as a
function of collector current.
2003 Mar 18
4
NXP Semiconductors
Product data sheet
PNP switching transistor
MMBT3906
handbook, halfpage
−10
3
MHC463
VCEsat
(mV)
(1)
−10
2
(2)
(3)
−10
−10
−1
−1
−10
−10
2
IC (mA)
−10
3
I
C
/I
B
= 10.
(1) T
amb
= 25
°C.
(2) T
amb
= 150
°C.
(3) T
amb
=
−55 °C.
Fig.6
Collector-emitter saturation voltage as a
function of collector current.
handbook, full pagewidth
VBB
VCC
RB
oscilloscope
Vi
R1
(probe)
450
Ω
R2
RC
Vo
(probe)
450
Ω
DUT
oscilloscope
MGD624
V
i
= 5 V; T = 500
µs;
t
p
= 10
µs;
t
r
= t
f
≤
3 ns.
R1 = 56
Ω;
R2 = 2.5 kΩ; R
B
= 3.9 kΩ; R
C
= 270
Ω.
V
BB
= 1.9 V; V
CC
=
−3
V.
Oscilloscope: input impedance Z
i
= 50
Ω.
Fig.7 Test circuit for switching times.
2003 Mar 18
5
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