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MJE13003

产品描述1.5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
产品类别半导体    分立半导体   
文件大小273KB,共3页
制造商MCC
官网地址http://www.mccsemi.com
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MJE13003概述

1.5 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB

1.5 A, 400 V, NPN, 硅, 功率晶体管, TO-220AB

MJE13003规格参数

参数名称属性值
端子数量3
晶体管极性NPN
最大集电极电流1.5 A
最大集电极发射极电压400 V
加工封装描述塑料, TO-220, 3 PIN
状态DISCONTINUED
包装形状矩形的
包装尺寸凸缘安装
端子形式THROUGH-孔
端子涂层锡 铅
端子位置单一的
包装材料塑料/环氧树脂
结构单一的
元件数量1
晶体管元件材料
晶体管类型通用电源
最小直流放大倍数8
额定交叉频率5 MHz

文档预览

下载PDF文档
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
MJE13003
Features
Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates
RoHS Compliant. See ordering information)
Capable of 1.5Watts of Power Dissipation.
Collector-current 1.5A
Collector-base Voltage 700V
Operating and storage junction temperature range: -55
O
C to +150
O
C
NPN Silicon
Plastic-Encapsulate
Transistor
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
TO-220
Min
400
700
9.0
1000
500
1000
Max
Units
F
B
C
S
Q
T
A
U
1 2
3
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Collector-Emitter Breakdown Voltage
(I
C
=10mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=1000uAdc, I
E
=0)
Emitter-Base Breakdown Voltage
(I
E
=1000uAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=700Vdc, I
E
=0)
Collector Cutoff Current
(V
CE
=400Vdc,I
B
=0)
Emitter Cutoff Current
(V
EB
=9.0Vdc, I
C
=0)
DC Current Gain
(I
C
=0.5Adc, V
CE
=2.0Vdc)
DC Current Gain
(I
C
=0.5mAdc, V
CE
=10Vdc)
Collector-Emitter Saturation Voltage
(I
C
=1000mAdc, I
B
=250mAdc)
Base-Emitter Saturation Voltage
(I
C
=1000mAdc, I
B
=250mAdc)
Base-Emitter Voltage
(I
E
=2000mAdc)
Trans istor Frequency
(I
C
=100mAdc, V
CE
=10Vdc, f=1.0MHz)
Fall Time
V
CC
=100V,I
C
=1.0
A,I
B1
=I
2
=0.2A
Storage Time
B
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
Vdc
Vdc
Vdc
uAdc
uAdc
uAdc
H
K
ON CHARACTERISTICS
h
FE(1)
h
FE(2)
V
CE(sat)
V
BE(sat)
V
BE
8.0
5.0
1.0
1.2
3.0
Vdc
Vdc
Vdc
DIM
A
B
C
D
F
G
H
J
K
L
N
Q
R
S
T
U
V
L
V
D
J
R
PIN 1.
PIN 2.
PIN 3.
BASE
COLLECTOR
EMITTER
40
G
N
DIMENSIONS
INCHES
MM
MIN
MAX
MIN
MAX
.560
.625
14.22
15.88
.380
.420
9.65
10.67
.140
.190
3.56
4.82
.020
.139
.190
---
.012
.500
.045
.190
.100
.080
.045
.230
-----
.045
.045
.161
.110
.250
.025
.580
.060
.210
.135
.115
.055
.270
.050
-----
0.51
3.53
2.29
---
0.30
12.70
1.14
4.83
2.54
2.04
1.14
5.84
-----
1.15
1.14
4.09
2.79
6.35
0.64
14.73
1.52
5.33
3.43
2.92
1.39
6.86
1.27
-----
NOTE
SMALL-SIGNAL CHARACTERISTICS
f
T
t
F
t
S
5.0
0.5
2.5
MHz
uS
uS
Notes:1.High Temperature Solder Exemption Applied, see EU Directive Annex 7.
www.mccsemi.com
Revision: A
1 of 3
2011/01/01

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