They are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration
and are mounted in Jedec TO-3 metal case.
They are intented for use as output devices in complementary general purpose amplifier
applications.
The complementary PNP types are the MJ4030, MJ4031, MJ4032.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
Collector-Base Voltage
Ratings
I
E
=0
MJ4033
MJ4034
MJ4035
MJ4033
MJ4034
MJ4035
MJ4033
MJ4034
MJ4035
Value
60
80
100
60
80
100
5.0
16
0.5
150
200
-65 to +200
Unit
V
V
CEO
Collector-EmitterVoltage
I
B
=0
V
V
EBO
I
C
I
B
P
T
T
J
T
s
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
I
C
=0
V
A
A
W
°C
@ T
C
< 25°
THERMAL CHARACTERISTICS
Symbol
R
thJ-C
Ratings
Thermal Resistance, Junction to Case
Value
1.17
Unit
°C/W
29/10/2012
COMSET SEMICONDUCTORS
1|3
NPN MJ4033 – MJ4034 – MJ4035
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
V
CEO
Ratings
Collector-Emitter
Voltage (*)
Collector Cutoff Current
Test Condition(s)
I
C
=100 mA, I
B
=0
V
CE
=30 Vdc, I
B
=0
V
CE
=40 Vdc, I
B
=0
V
CE
=50 V, I
B
=0
V
BE
=5.0 V, I
C
=0
V
CB
=60 V
R
BE
=1.0 kΩ
V
CB
=80 V
R
BE
=1.0 kΩ
V
CB
=100 V
R
BE
=1.0 kΩ
V
CB
=60 V
R
BE
=1.0 kΩ
T
C
=150°C
V
CB
=80 V
R
BE
=1.0 kΩ
T
C
=150°C
V
CB
=100 V
R
BE
=1.0 kΩ
T
C
=150°C
I
C
=10 A
I
B
=40 mA
I
C
=16 A
I
B
=80 mA
I
C
=10 A
V
CE
=3.0V
V
CE
=10 V
I
C
=3.0 A
MJ4033
MJ4034
MJ4035
MJ4033
MJ4034
MJ4035
MJ4033
MJ4034
MJ4035
MJ4033
MJ4034
MJ4035
MJ4033
Min
60
80
100
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
Max
-
-
Unit
V
I
CEO
3.0
mA
I
EBO
Emitter Cutoff Current
5.0
mA
1.0
I
CER
Collector-Emitter Leakage
Current
-
-
mAdc
MJ4034
-
-
5.0
MJ4035
MJ4033
MJ4034
MJ4035
MJ4033
MJ4034
MJ4035
MJ4033
MJ4034
MJ4035
MJ4033
MJ4034
MJ4035
-
-
2.5
Vdc
V
CE(SAT)
Collector-Emitter saturation
Voltage (*)
-
-
4.0
V
BE
Base-Emitter Voltage (*)
-
-
3
V
h
FE
DC Current Gain (*)
1000
-
-
-
(*) Pulse Width
≈
300
µs,
Duty Cycle
∠
2.0%
29/10/2012
COMSET SEMICONDUCTORS
2|3
NPN MJ4033 – MJ4034 – MJ4035
MECHANICAL DATA CASE TO-3
DIMENSIONS (mm)
min
A
B
C
D
F
G
N
P
R
U
V
11
0.97
1.5
8.32
19
10.70
16.50
25
4
38.50
30
max
13.10
1.15
1.65
8.92
20
11.1
17.20
26
4.09
39.30
30.30
Pin 1 :
Pin 2 :
Case :
Base
Emitter
Collector
Revised September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
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