Dual N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 7.6A, R
DS(ON)
= 22mΩ @V
GS
= 10V.
R
DS(ON)
= 33mΩ @V
GS
= 4.5V.
20V, 6A, R
DS(ON)
= 27mΩ @V
GS
= 4.5V.
R
DS(ON)
= 40mΩ @V
GS
= 2.5V.
Super high dense cell design for extremely low R
DS(ON)
.
High power and current handing capability.
Lead-free plating ; RoHS compliant.
Surface mount Package.
SO-8
1
1
S
1
2
G
1
D
1
8
D
1
7
CEM26138
PRELIMINARY
D
2
6
D
2
5
3
S
2
4
G
2
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
a
T
A
= 25 C unless otherwise noted
Symbol
V
DS
V
GS
I
D
I
DM
P
D
T
J
,T
stg
Channel 1
30
Channel 2
20
Units
V
V
A
A
W
C
±
20
7.6
30
2.0
-55 to 150
±
12
6
24
Maximum Power Dissipation
Operating and Store Temperature Range
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Ambient
b
Symbol
R
θJA
Limit
62.5
Units
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 2. 2012.Aug
http://www.cetsemi.com
CEM26138
N-Channel(Q1) Electrical Characteristics
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Static Drain-Source
On-Resistance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
d
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Forward Current
b
Drain-Source Diode Forward Voltage
c
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
V
GS
= 0V, I
S
= 1.6A
V
DS
= 15V, I
D
= 6A,
V
GS
= 5V
V
DD
= 15V, I
D
= 1A,
V
GS
= 10V, R
GEN
= 6Ω
10
4
25
4
13
2
3.5
1.6
1.2
ns
ns
ns
ns
nC
nC
nC
A
V
d
c
T
A
= 25 C unless otherwise noted
Min
30
1
100
-100
1
17
27
590
125
95
3
22
33
Typ
Max
Units
V
µA
Symbol
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
C
iss
C
oss
C
rss
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 30V, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
GS
= -20V, V
DS
= 0V
V
GS
= V
DS
, I
D
= 250µA
V
GS
= 10V, I
D
= 6.3A
V
GS
= 4.5V, I
D
= 5.0A
nA
nA
V
mΩ
mΩ
pF
pF
pF
Gate Threshold Voltage
V
DS
= 15V, V
GS
= 0V,
f = 1.0 MHz
Drain-Source Diode Characteristics and Maximun Ratings
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2
CEM26138
N-Channel(Q2) Electrical Characteristics
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
Static Drain-Source
On-Resistance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
d
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Forward Current
b
Drain-Source Diode Forward Voltage
c
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
I
S
V
SD
V
GS
= 0V, I
S
= 1.7A
V
DS
= 10V, I
D
= 6A,
V
GS
= 4.5V
V
DD
= 10V, I
D
= 1A,
V
GS
= 4.5V, R
GEN
= 6Ω
10
7
34
6
6.8
0.5
1.8
1.7
1.2
ns
ns
ns
ns
nC
nC
nC
A
V
d
c
T
A
= 25 C unless otherwise noted
Min
20
1
100
-100
0.5
21
32
720
130
95
1.5
27
40
Typ
Max
Units
V
µA
Symbol
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS(th)
R
DS(on)
C
iss
C
oss
C
rss
Test Condition
V
GS
= 0V, I
D
= 250µA
V
DS
= 20V, V
GS
= 0V
V
GS
= 12V, V
DS
= 0V
V
GS
= -12V, V
DS
= 0V
V
GS
= V
DS
, I
D
= 250µA
V
GS
= 4.5V, I
D
= 6A
V
GS
= 2.5V, I
D
= 5.2A
nA
nA
V
mΩ
mΩ
pF
pF
pF
Gate Threshold Voltage
V
DS
= 8V, V
GS
= 0V,
f = 1.0 MHz
Drain-Source Diode Characteristics and Maximun Ratings
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
3
CHANNEL 1
25
20
15
10
5
0
V
GS
=10,8,6,5V
V
GS
=4V
CEM26138
15
12
9
6
25 C
3
0
T
J
=125 C
-55 C
2
4
6
I
D
, Drain Current (A)
V
GS
=3V
0
1
2
3
4
I
D
, Drain Current (A)
0
V
DS
, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
R
DS(ON),
Normalized
R
DS(ON)
, On-Resistance(Ohms)
900
750
600
450
300
150
0
Coss
Crss
0
3
6
9
12
15
Ciss
2.2
1.9
1.6
1.3
1.0
0.7
0.4
-100
V
GS
, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
I
D
=6.3A
V
GS
=10V
C, Capacitance (pF)
-50
0
50
100
150
200
V
DS
, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
V
DS
=V
GS
T
J
, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
I
S
, Source-drain current (A)
V
GS
=0V
10
1
V
TH
, Normalized
Gate-Source Threshold Voltage
I
D
=250µA
10
0
-25
0
25
50
75
100
125
150
10
-1
0.4
0.6
0.8
1.0
1.2
1.4
T
J
, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
V
SD
, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
4
CHANNEL 2
10
8
6
4
2
0
0.0
V
GS
=4.5,3.5,2.5V
CEM26138
15
V
GS
=2.0V
I
D
, Drain Current (A)
I
D
, Drain Current (A)
12
9
6
3
T
J
=125 C
0
0.0
25 C
-55 C
1.5
2.0
2.5
3.0
V
GS
=1.5V
0.5
1.0
1.5
2.0
2.5
3.0
0.5
1.0
V
DS
, Drain-to-Source Voltage (V)
Figure 7. Output Characteristics
R
DS(ON),
Normalized
R
DS(ON)
, On-Resistance(Ohms)
900
750
600
450
300
150
0
Coss
Crss
0
2
4
6
8
10
Ciss
2.2
1.9
1.6
1.3
1.0
0.7
0.4
-100
V
GS
, Gate-to-Source Voltage (V)
Figure 8. Transfer Characteristics
I
D
=6A
V
GS
=4.5V
C, Capacitance (pF)
-50
0
50
100
150
200
V
DS
, Drain-to-Source Voltage (V)
Figure 9. Capacitance
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
-50
V
DS
=V
GS
T
J
, Junction Temperature( C)
Figure 10. On-Resistance Variation
with Temperature
I
S
, Source-drain current (A)
V
GS
=0V
10
1
V
TH
, Normalized
Gate-Source Threshold Voltage
I
D
=250µA
10
0
10
-25
0
25
50
75
100
125
150
-1
0.4
0.6
0.8
1.0
1.2
1.4
T
J
, Junction Temperature( C)
Figure 11. Gate Threshold Variation
with Temperature
V
SD
, Body Diode Forward Voltage (V)
Figure 12. Body Diode Forward Voltage
Variation with Source Current
5
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