MGA-675T6
Low Noise Amplifier with Shutdown Mode
in Low Profile Package for 4.9 – 6 GHz Application
Data Sheet
Description
Avago Technologies’ MGA-675T6 is an economical, easy-
to-use wideband GaAs MMIC Low Noise Amplifier (LNA)
with Shutdown mode. The LNA has low noise and high
linearity achieved through the use of Avago Technologies’
proprietary 0.5um GaAs Enhancement-mode pHEMT pro-
cess. The shutdown mode enables the LNA to be turned
off when not in use and reduce current consumption. It
is housed in a low profile 2 x 1.3 x 0.4mm 6-pin Ultra Thin
Package. The compact footprint and low profile coupled
with low noise, high linearity makes the MGA-675T6 an
ideal choice as a low noise amplifier for mobile receiver in
the WLAN applications.
Features
Low operating current
Low Noise Figure
4.9 GHz – 6 GHz operating range
GaAs E-pHEMT Technology
[1]
Best in class linearity and input power compression
Low profile package size: 2.0 x 3.0 x 0.4 mm
3
Excellent uniformity in product specifications
Tape-and-Reel packaging option available
Specifications
5.5 GHz; 3V, 10mA (typ):
17.8 dB Gain
1.75 dB Noise Figure
-3 dBm Input IP3
-10 dBm Input Power at 1dB gain compression
S11 of -8.5dB, S22 of -9dB for NF match.
<0.5mA current consumption in Shutdown Mode
Component Image
2.0 x 1.3 x 0.4 mm
3
6-lead Ultra Thin Package
.
7FYM
Top View
Note:
Package marking provides orientation and identification
“7F” = Product Code
“Y” = Year of Manufacture
“M” = Month of Manufacture
Applications
Low noise amplifier for mobile receiver for WLAN.
Other ultra low noise application in the 4.9 – 6 GHz
band e.g 5.8 GHz WiMax.
Note:
1. Enhancement mode technology employs positive Vgs, thereby
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
Pin Configuration
Pin 1
(Shutdown)
Pin 2
(RF_IN)
Pin 3
(Not Used)
Pin 6
(VDD)
GND
Pin 5
(RF_OUT)
Pin 4
(Not Used)
Top View
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 50 V
ESD Human Body Model = 250 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
Absolute Maximum Ratings
[1]
T
A
= 25 °C
Symbol
V
dd
P
in,max
P
diss
T
j
T
STG
Parameter
Device Voltage
CW RF Input Power
Total Power Dissipation
Junction Temperature
Storage Temperature
Units
V
dBm
mW
°C
°C
Absolute Max.
3.6
12
45
150
-65 to 150
Thermal Resistance
[2,3]
(Vdd = 3.0V, Id = 10mA) , θjc = 65 °C/W
Notes:
1. Operation of this device in excess of any of these limits may cause permanent damage.
2. Thermal resistance measured using Infra-Red Measurement Technique.
3. Board temperature T
B
is 25 °C , for T
B
> 147 °C, Derate the device power at 15.4 mW per °C rise in board ( Package belly) temperature.
Electrical Specifications
[4,5]
T
A
= 25 °C, Vdd = Vshutdown = 3V @ 10mA, RF performance at 5.5 GHz, measured on demo board (see Figure 4) unless other-
wise specified.
Symbol
Vdd
VShutdown
Ids
Gain
IIP3
[5]
NF
IP1dB
S11
S22
Parameter and Test Condition
Supply Voltage
Shutdown Voltage
Supply Current
Gain
Input Third Order Intercept Point
Noise Figure
Input Power at 1dB Gain Compression
Input Return Loss, 50Ω source
Output Return Loss, 50Ω load
Units
V
V
mA
dB
dBm
dB
dBm
dB
dB
Min.
Typ.
3
3
Max.
6.8
16.3
-
-
-
-
-
10
17.8
-3
1.75
-10
-8.5
-9
13
19.3
-
2.1
-
-
-
Notes:
4. Measurements at 5.5GHz obtained using demo board described in Figure 1.
5. LNA Mode IIP3 test condition: F
RF1
= 5.5 GHz, F
RF2
= 5.505 GHz with input power of -30dBm per tone.
The LNA operation configuration
Vdd
LNA Mode
Shutdown Mode
3V
3V
VShutdown
3V
0V
2
Product Consistency Distribution Charts
[1]
LSL = 16.30
Nominal = 17.82
USL = 19.30
CPK = 1.52
Nominal = 1.76
USL = 2.10
CPK = 1.41
18
17
Figure 1. Gain @ 5.5 GHz , Vd 3V; Vshutdown 3 V
19
1.4
1.5
1.6
1.7
1.8
1.9
2
2.1
2.2
Figure 2. NF @ 5.5 GHz , Vd 3V; Vshutdown 3 V
LSL = 6.80
Nominal = 9.90
USL = 13.00
CPK = 2.79
7
8
9
10
11
12
13
Figure 3. Idd @ 5.5 GHz , Vd 3V; Vshutdown 3 V
Notes:
1. Distribution data sample size are 6000 samples taken from 3 different wafers and 3 different lots. Future wafers allocated to this product may have
nominal values anywhere between the upper and lower limits.
3
5.5 GHz Tuned Demo Board Layout
RF OUTPUT
R1
VDD
C4
L2
C3
L1
GND
C2
VSHUTDOWN
J2
J1
C1
RF INPUT
Figure 4 . Demo Board Layout For 5.5 GHz operation
[1.2]
Notes:
1. Performance in a specified frequency band can be optimized by changing component values in the demo board
above to suit the application at that frequency.
2. Jumpers [J1,J2] indicated in the demo board are not needed in actual application board; this is because generic demo board were used for
development.
Demo Board Components
Components
J1,J2
C1
C2
C3
Value
0 ohm
2.4 pF
1.6 pF
3 pF
P/N
RK73Z1E000 (KOA)
Rohm
Rohm
Kyocera
Components
L1
L2
R1
C4
Value
1 nH
10 nH
51 ohm
2pF
P/N
LL1005-FHL1N0S (TOKO)
LL1005-FHL10NJ (TOKO)
RK73B1ETTP (KOA)
Rohm
4
Vdd
L2
10nH
1.6pF
R1
50
MGA-675T6
Vshutdown
1
bias/control
6
L1
1nH
C3
3pF
2pF
RFin
2.4pF
C1
0 ohm
3
4
2
5
C2
RFout
0 ohm
Open 50 ohm
Transmission
Line
Figure 5. Demo Board Schematic Diagram
Notes:
1. The 0 Ohm resistors at the input are inductive, they are used as recommended matching elements in place of inductors. An alternative is to use
shunt transmission lines, but this method is much more repeatable.
2. L2 and R1 are used to isolate the LNA demoboard from external power supply variations. They may not be needed in actual applications.
3. C1, C2, C3 and L1 are input and output matching components.
MGA-675T6 Typical Performance
T
A
= +25
C,
Vdd = 3V, Ids = 10mA, RF measurement at 5.5 GHz, Input Signal = CW unless stated otherwise.
20
(S(2,1))
0
(S(1,1))
-20
dB
-40
-60
-80
3
4
5
6
Freq (GHz)
7
8
(S(2,2))
(S(1,2))
Figure 6. S21,S11,S22, S12 vs Frequency
5
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