MCP1640/B/C/D
0.65V Start-up Synchronous Boost Regulator with True
Output Disconnect or Input/Output Bypass Option
Features
• Up to 96% Typical Efficiency
• 800 mA Typical Peak Input Current Limit:
- I
OUT
> 100 mA @ 1.2V V
IN
, 3.3V V
OUT
- I
OUT
> 350 mA @ 2.4V V
IN
, 3.3V V
OUT
- I
OUT
> 350 mA @ 3.3V V
IN
, 5.0V V
OUT
• Low Start-up Voltage: 0.65V, typical 3.3V V
OUT
@ 1 mA
• Low Operating Input Voltage: 0.35V, typical
3.3V
OUT
@ 1 mA
• Adjustable Output Voltage Range: 2.0V to 5.5V
• Maximum Input Voltage
V
OUT
< 5.5V
• Automatic PFM/PWM Operation (MCP1640C):
- PFM Operation Disabled (MCP1640B/D)
- PWM Operation: 500 kHz
• Low Device Quiescent Current: 19 µA, typical
PFM Mode
• Internal Synchronous Rectifier
• Internal Compensation
• Inrush Current Limiting and Internal Soft-Start
• Selectable, Logic Controlled, Shutdown States:
- True Load Disconnect Option (MCP1640B)
- Input to Output Bypass Option (MCP1640C/D)
• Shutdown Current (All States): < 1 µA
• Low Noise, Anti-Ringing Control
• Overtemperature Protection
• Available Packages:
- 6-Lead SOT23
- 8-Lead 2x3 DFN
General Description
The MCP1640/B/C/D is a compact, high-efficiency,
fixed frequency, synchronous step-up DC-DC con-
verter. It provides an easy-to-use power supply solution
for applications powered by either one-cell, two-cell, or
three-cell alkaline, NiCd, NiMH, one-cell Li-Ion or
Li-Polymer batteries.
Low-voltage technology allows the regulator to start up
without high inrush current or output voltage overshoot
from a low 0.65V input. High efficiency is accomplished
by integrating the low resistance N-Channel Boost
switch and synchronous P-Channel switch. All
compensation and protection circuitry are integrated to
minimize external components. For standby
applications, the MCP1640 operates and consumes
only 19 µA while operating at no load, and provides a
true disconnect from input to output while shut down
(EN = GND). Additional device options are available
that operate in PWM-only mode and connect input to
output bypass while shut down.
A “true” load disconnect mode provides input to output
isolation while disabled by removing the normal boost
regulator diode path from input to output. A Bypass
mode option connects the input to the output using the
integrated low resistance P-Channel MOSFET, which
provides a low bias keep-alive voltage for circuits
operating in Deep Sleep mode. Both options consume
less than 1 µA of input current.
Output voltage is set by a small external resistor
divider. Two package options are available, 6-Lead
SOT23 and 8-Lead 2x3 DFN.
Package Types
Applications
• One, Two and Three Cell Alkaline and NiMH/NiCd
Portable Products
• Single Cell Li-Ion to 5V Converters
• Li Coin Cell Powered Devices
• Personal Medical Products
• Wireless Sensors
• Handheld Instruments
• GPS Receivers
• Bluetooth Headsets
• +3.3V to +5.0V Distributed Power Supply
MCP1640
6-Lead SOT23
SW 1
GND 2
EN 3
6 V
IN
5 V
OUT
4 V
FB
MCP1640
8-Lead 2x3 DFN*
V
FB
1
S
GND
2
P
GND
3
EN 4
EP
9
8 V
IN
7 V
OUTS
6 V
OUTP
5 SW
* Includes Exposed Thermal Pad (EP); see
Table 3-1.
2011 Microchip Technology Inc.
DS22234B-page 1
MCP1640/B/C/D
L
1
4.7
µ
H
V
IN
0.9V to 1.7V
SW V
OUT
V
IN
V
OUT
3.3V @ 100 mA
ALKALINE
+
-
C
IN
4.7
µ
F
976 K
EN
V
FB
562 K
C
OUT
10
µ
F
GND
L
1
4.7
µ
H
V
IN
3.0V to 4.2V
SW V
V
IN
V
OUT
5.0V @ 300 mA
OUTS
V
OUTP
V
FB
+
LI-ION
C
IN
4.7
µ
F
976 K
EN
C
OUT
10
µ
F
309 K
-
P
GND
S
GND
Efficiency vs. I
OUT
for 3.3V
OUT
100.0
V
IN
= 2.5V
Efficiency (%)
80.0
V
IN
= 0.8V
V
IN
= 1.2V
60.0
40.0
0.1
1.0
10.0
Output Current (mA)
100.0
1000.0
DS22234B-page 2
2011 Microchip Technology Inc.
MCP1640/B/C/D
1.0
ELECTRICAL
CHARACTERISTICS
†
Notice:
Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
Absolute Maximum Ratings †
EN, FB, V
IN,
V
SW
, V
OUT
- GND ........................... +6.5V
EN, FB ...........<greater of V
OUT
or V
IN
> (GND - 0.3V)
Output Short Circuit Current....................... Continuous
Output Current Bypass Mode........................... 400 mA
Power Dissipation ............................ Internally Limited
Storage Temperature .........................-65
o
C to +150
o
C
Ambient Temp. with Power Applied......-40
o
C to +85
o
C
Operating Junction Temperature........-40
o
C to +125
o
C
ESD Protection On All Pins:
HBM........................................................ 3 kV
MM........................................................ 300 V
DC CHARACTERISTICS
Electrical Characteristics:
Unless otherwise indicated, V
IN
= 1.2V, C
OUT
= C
IN
= 10 µF, L = 4.7 µH, V
OUT
= 3.3V, I
OUT
= 15 mA,
T
A
= +25°C.
Boldface
specifications apply over the T
A
range of -40
o
C to +85
o
C.
Parameters
Input Characteristics
Minimum Startup Voltage
Minimum Input Voltage After
Start-Up
Output Voltage Adjust Range
Maximum Output Current
Sym
V
IN
V
IN
V
OUT
I
OUT
Min
—
—
2.0
Typ
0.65
0.35
Max
0.8
—
5.5
Units
V
V
V
mA
mA
mA
V
pA
µA
Note 1
Note 1
Conditions
V
OUT
V
IN
;
Note 2
1.2V V
IN
, 2.0V V
OUT
1.5V V
IN
, 3.3V V
OUT
3.3V V
IN
, 5.0V V
OUT
—
—
Measured at V
OUT
= 4.0V;
EN = V
IN
, I
OUT
= 0 mA;
Note 3
Measured at V
OUT
; EN = V
IN
I
OUT
= 0 mA;
Note 3
V
OUT
= EN = GND;
Includes N-Channel and
P-Channel Switch Leakage
V
IN
= V
SW
= 5V;
V
OUT
= 5.5V
V
EN
= V
FB
= GND
V
IN
= VS
W
= GND;
V
OUT
= 5.5V
V
IN
= 3.3V, I
SW
= 100 mA
150
100
150
350
1.21
10
19
—
—
—
1.245
—
30
Feedback Voltage
Feedback Input Bias Current
Quiescent Current – PFM
Mode
Quiescent Current – PWM
Mode
Quiescent Current – Shutdown
V
FB
I
VFB
I
QPFM
1.175
—
—
I
QPWM
I
QSHDN
—
—
220
0.7
—
2.3
µA
µA
NMOS Switch Leakage
I
NLK
—
0.3
1
µA
PMOS Switch Leakage
NMOS Switch ON Resistance
Note 1:
2:
3:
4:
5:
I
PLK
R
DS(ON)N
—
—
0.05
0.6
0.2
—
µA
3.3 K resistive load, 3.3V
OUT
(1 mA).
For V
IN
> V
OUT
, V
OUT
will not remain in regulation.
I
Q
is measured from V
OUT
; V
IN
quiescent current will vary with boost ratio. V
IN
quiescent current can be
estimated by: (I
QPFM
* (V
OUT
/V
IN
)), (I
QPWM
* (V
OUT
/V
IN
)).
220 resistive load, 3.3V
OUT
(15 mA).
Peak current limit determined by characterization, not production tested.
2011 Microchip Technology Inc.
DS22234B-page 3
MCP1640/B/C/D
DC CHARACTERISTICS (CONTINUED)
Electrical Characteristics:
Unless otherwise indicated, V
IN
= 1.2V, C
OUT
= C
IN
= 10 µF, L = 4.7 µH, V
OUT
= 3.3V, I
OUT
= 15 mA,
T
A
= +25°C.
Boldface
specifications apply over the T
A
range of -40
o
C to +85
o
C.
Parameters
PMOS Switch ON Resistance
NMOS Peak Switch Current
Limit
V
OUT
Accuracy
Line Regulation
Sym
R
DS(ON)P
I
N(MAX)
V
OUT
%
V
OUT
/
V
OUT
) /
V
IN
|
V
OUT
/
V
OUT
|
DC
MAX
f
SW
V
IH
V
IL
I
ENLK
t
SS
T
SD
T
SDHYS
Min
—
600
-3
-1
Typ
0.9
850
—
0.01
Max
—
—
+3
1
Units
mA
%
%/V
Note 5
Conditions
V
IN
= 3.3V, I
SW
= 100 mA
Includes Line and Load
Regulation; V
IN
= 1.5V
V
IN
= 1.5V to 3V
I
OUT
= 25 mA
I
OUT
= 25 mA to 100 mA;
V
IN
= 1.5V
Load Regulation
Maximum Duty Cycle
Switching Frequency
EN Input Logic High
EN Input Logic Low
EN Input Leakage Current
Soft-start Time
Thermal Shutdown Die
Temperature
Die Temperature Hysteresis
Note 1:
2:
3:
4:
5:
-1
88
425
90
—
—
—
—
—
0.01
90
500
—
—
0.005
750
150
10
1
—
575
—
20
—
—
—
—
%
%
kHz
%of V
IN
I
OUT
= 1 mA
%of V
IN
I
OUT
= 1 mA
µA
µS
C
C
V
EN
= 5V
EN Low to High, 90% of
V
OUT
;
Note 4
3.3 K resistive load, 3.3V
OUT
(1 mA).
For V
IN
> V
OUT
, V
OUT
will not remain in regulation.
I
Q
is measured from V
OUT
; V
IN
quiescent current will vary with boost ratio. V
IN
quiescent current can be
estimated by: (I
QPFM
* (V
OUT
/V
IN
)), (I
QPWM
* (V
OUT
/V
IN
)).
220 resistive load, 3.3V
OUT
(15 mA).
Peak current limit determined by characterization, not production tested.
TEMPERATURE SPECIFICATIONS
Electrical Specifications:
Parameters
Temperature Ranges
Operating Junction Temperature
Range
Storage Temperature Range
Maximum Junction Temperature
Package Thermal Resistances
Thermal Resistance, 5L-TSOT23
Thermal Resistance, 8L-2x3 DFN
JA
JA
—
—
192
93
—
—
°C/W
°C/W
EIA/JESD51-3 Standard
T
J
T
A
T
J
-40
-65
—
—
—
—
+125
+150
+150
°C
°C
°C
Transient
Steady State
Sym
Min
Typ
Max
Units
Conditions
DS22234B-page 4
2011 Microchip Technology Inc.
MCP1640/B/C/D
2.0
Note:
TYPICAL PERFORMANCE CURVES
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note:
Unless otherwise indicated,
V
IN
= EN = 1.2V, C
OUT
= C
IN
= 10 µF, L = 4.7 µH, V
OUT
= 3.3V, I
LOAD
= 15 mA, T
A
= +25°C.
27.5
25.0
V
IN
= 1.2V
V
OUT
= 5.0V
100
90
80
V
OUT
= 2.0V
V
IN
= 1.6V
I
Q
PFM Mode (µA)
22.5
20.0
17.5
15.0
12.5
10.0
-40
-25
-10
5
20
35
50
65
80
V
OUT
= 2.0V
V
OUT
= 3.3V
Efficiency (%)
70
60
50
40
30
20
10
0
0.01
0.1
1
V
IN
= 0.8V
V
IN
= 1.2V
PWM / PFM
PWM ONLY
10
100
1000
Ambient Temperature (°C)
I
OUT
(mA)
FIGURE 2-1:
V
OUT
I
Q
vs. Ambient
Temperature in PFM Mode.
300
V
OUT
= 5.0V
275
250
225
200
175
150
-40
-25
-10
5
20
35
50
65
80
V
OUT
= 3.3V
V
IN
= 1.2V
FIGURE 2-4:
2.0V V
OUT
PFM / PWM
Mode Efficiency vs. I
OUT
.
100
90
80
V
OUT
= 3.3V
V
IN
= 2.5V
I
Q
PWM Mode (µA)
Efficiency (%)
70
60
50
40
30
20
10
0
0.01
0.1
1
V
IN
= 0.8V
V
IN
= 1.2V
PWM / PFM
PWM ONLY
10
100
1000
Ambient Temperature (°C)
I
OUT
(mA)
FIGURE 2-2:
V
OUT
I
Q
vs. Ambient
Temperature in PWM Mode.
600
V
OUT
= 5.0V
500
400
300
200
100
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
V
OUT
= 2.0V
V
OUT
= 3.3V
FIGURE 2-5:
3.3V V
OUT
PFM / PWM
Mode Efficiency vs. I
OUT
.
100
90
80
V
OUT
= 5.0V
V
IN
= 2.5V
Efficiency (%)
70
60
50
40
30
20
10
0
0.01
0.1
1
V
IN
= 1.2V
V
IN
= 1.8V
I
OUT
(mA)
PWM / PFM
PWM ONLY
10
100
1000
V
IN
(V)
I
OUT
(mA)
FIGURE 2-3:
Maximum I
OUT
vs. V
IN
.
FIGURE 2-6:
5.0V V
OUT
PFM / PWM
Mode Efficiency vs. I
OUT
.
2011 Microchip Technology Inc.
DS22234B-page 5
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