Operating Temperature Range .........................-40°C to +125°C
Junction Temperature ......................................................+150°C
Storage Temperature Range .............................-60°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Soldering Temperature (reflow) .......................................+260°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V
IN
= 14V, C
GATE
= 6nF, T
A
= -40°C to +125°C, unless otherwise noted. Typical values are at T
A
= +25°C.) (Note 1)
PARAMETER
Supply Voltage Range
SYMBOL
V
IN
SHDN
= high
SHDN
= low (MAX6497/MAX6498/
MAX6499)
SHDN
= low (MAX6495/MAX6496)
IN Undervoltage Lockout
IN Undervoltage Lockout
Hysteresis
OVSET Threshold Voltage
(MAX6495/MAX6496)
OVSET Threshold Hysteresis
(MAX6495/MAX6496)
OVSET Threshold Voltage
(MAX6497/MAX6498)
OVSET Threshold Voltage
(MAX6499)
UVSET Threshold Voltage
(MAX6499)
OVSET/UVSET Threshold
Hysteresis (MAX6499)
POKSET Threshold Voltage
(MAX6497/MAX6498)
POKSET Threshold
Hysteresis (MAX6497/
MAX6498)
OVSET, UVSET, POKSET
Input Current
Startup Response Time
GATE Rise Time
V
TH+
V
TH-
V
HYST
V
TH+
V
TH-
V
TH+
V
TH-
V
TH+
V
TH-
V
HYST
V
IN
rising, enables GATE
V
IN
falling, disables GATE
OVSET rising
OVSET falling
OVSET falling
OVSET rising
OVSET falling
OVSET rising
OVSET falling
UVSET rising
UVSET falling
OVSET falling
1.22
1.22
1.22
0.494
1.22
4.75
CONDITIONS
MIN
5.5
100
15
24
5
155
1.24
1.18
5
0.505
0.13
1.24
1.18
1.24
1.18
5
1.24
1.18
5
1.26
1.26
1.26
0.518
1.26
TYP
MAX
72.0
150
24
32
5.25
V
mV
V
%
V
V
V
%
V
µA
UNITS
V
Input Supply Current
I
IN
No load
V
POKSET+
POKSET rising
V
POKSET-
POKSET falling
V
HYST
POKSET falling
%
I
SET
t
START
SHDN
rising (Note 2)
GATE rising from GND to V
OUTFB
+ 8V,
OUTFB = GND
-50
100
1
+50
nA
µs
ms
2
72V, Overvoltage-Protection Switches/
Limiter Controllers with an External MOSFET
ELECTRICAL CHARACTERISTICS (continued)
(V
IN
= 14V, C
GATE
= 6nF, T
A
= -40°C to +125°C, unless otherwise noted. Typical values are at T
A
= +25°C.) (Note 1)
PARAMETER
OVSET to GATE Propagation
Delay
UVSET to GATE, POKSET to
POK Propagation Delay
GATE Output High Voltage
GATE Output Low Voltage
GATE Charge-Pump Current
GATE to OUTFB Clamp
Voltage
IN to GATEP Output Low
Voltage
IN to GATEP Clamp Voltage
SHDN, CLEAR
Logic-High
Input Voltage
SHDN, CLEAR
Logic-Low
Input Voltage
SHDN
Input Pulse Width
CLEAR
Input Pulse Width
SHDN, CLEAR
Input
Pulldown Current
Thermal Shutdown
Thermal-Shutdown
Hysteresis
POKSET to POK Delay
(MAX6497/MAX6498)
POK Output Low Voltage
(MAX6497/MAX6498)
POK Leakage Current
(MAX6497/MAX6498)
V
OL
V
IN
≥
14V, POKSET = GND, I
SINK
= 3.2mA
V
IN
≥
2.8V, POKSET = GND, I
SINK
= 100µA
V
POKSET
= 14V
SHDN
is Internally pulled down to GND
(Note 3)
0.6
V
IH
V
IL
7
0.5
1.0
+160
20
35
0.4
0.4
100
1.4
V
OH
V
OL
I
GATE
V
CLMP
I
GATEP
_
SINK
= 75µA, I
GATEP
_
SOURCE
= 1µA
V
IN
= 24V, I
GATEP
_
SOURCE
= 10µA
SYMBOL
t
OV
CONDITIONS
SET rising from V
TH
- 100mV to V
TH
+ 100mV
POKSET, UVSET falling from V
TH
+ 100mV to
V
TH
- 100mV
V
OUTFB
= V
IN
= 5.5V, R
GATE
to IN = 1MΩ
V
OUTFB
= V
IN,
V
IN
≥
14V, R
GATE
to IN = 1MΩ
GATE sinking 15mA, OUTFB = GND
V
IN
= 5.5V, GATE sinking 1mA, OUTFB = GND
GATE = GND
12
7.5
12
1.4
V
0.4
µs
µs
µA
°C
°C
µs
V
nA
100
18
11.7
18
20
V
IN
+ 3.4 V
IN
+ 3.8 V
IN
+ 4.2
V
IN
+ 8 V
IN
+ 10 V
IN
+ 11
1
0.9
MIN
TYP
MAX
0.6
UNITS
µs
µs
V
V
µA
V
V
V
MAX6495–MAX6499
Note 1:
Specifications to T
A
= -40°C are guaranteed by design and not production tested.
Note 2:
The MAX6495–MAX6499 power up with the external MOSFET in off mode (V
GATE
= GND). The external MOSFET turns on
t
START
after all input conditions are valid.
Note 3:
For accurate overtemperature-shutdown performance, place the device in close thermal contact with the external MOSFET.
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