MAX19757
Dual, SiGe, High-Linearity,
1700MHz to 2700MHz Downconversion Mixer
with Advanced Shutdown Features
Benefits and Features
General Description
The MAX19757 dual-channel downconverter is designed
to provide 8.8dB gain, +25.3dBm input IP3 and 10.4dB
NF for a multitude of 1700MHz to 2700MHz basestation
receiver applications. With an optimized LO frequency
range of 1800MHz to 2600MHz, this mixer supports both
high- and low-side LO injection architectures for 1700MHz
to 2200MHz and 2000MHz to 2700MHz RF bands,
respectively. Independent path shutdown allows the user
to save DC power during low-peak usage times or in TDD
TX mode.
The device integrates baluns in the RF and LO ports, an
LO buffer, two double-balanced mixers, and a pair of dif-
ferential IF output amplifiers. The MAX19757 requires a
typical LO drive of 0dBm, and a supply current typically
300mA at band center and 350mA across the LO frequen-
cy band to achieve the targeted linearity performance.
The MAX19757 is available in a compact 36-pin TQFN
package (6mm x 6mm x 0.8mm) with an exposed paddle.
Electrical performance is guaranteed over the extended
-40°C to +105°C temperature range.
● 1700MHz to 2700MHz RF Frequency Range
● 1800MHz to 2600MHz LO Frequency Range
● 50MHz to 500MHz IF Frequency Range
● 25.3dBm IIP3
● 8.8dB Conversion Gain
● 13.1dBm Input 1dB Compression Point
● 10.4dB Noise Figure
● 73dBc 2RF–2LO Spurious Rejection at P
RF
= -10dBm
● Dual Channels Ideal for Diversity Receiver
Applications
● Integrated LO Buffer
● -3dBm to +3dBm LO Drive
● Built-In SPDT LO Switch with 50dB LO-to-LO
Isolation and 240ns Switching Time
● 46dB Channel Isolation
● Optional On-Chip Detector at IF Output Automatically
Adjusts Bias Current for Optimum Power
Management
● External Current-Setting Resistors Allow Tradeoff
Between Power and Performance
● Advanced Shutdown Features Include:
•
Independent Path Power-Down
•
Rapid Power-Down/Power-Up Modes for Toggling
Between On/Off States in TDD Applications
•
Controlled LO Port Impedance Minimizes VCO
Pulling During Power Cycling
Applications
●
●
●
●
●
●
●
●
●
2.3GHz WCS Base Stations
2.5GHz WiMAX®, LTE, TD-LTE Base Stations
2.7GHz MMDS Base Stations
UMTS/WCDMA, TD-SCDMA and cdma2000® 3G
Base Stations
DCS1800 and PCS1900 and EDGE Base Stations
Fixed Broadband Wireless Access
Wireless Local Loop
Private Mobile Radios
Military Systems
Ordering Information
appears at end of data sheet.
For related parts and recommended products to use with this part, refer
to
www.maximintegrated.com/MAX19757.related.
WiMAX is a registered certification mark and registered
service mark of WiMAX Forum.
cdma2000 is a registered trademark of Telecommunications
Industry Association.
19-6280; Rev 0; 12/12
MAX19757
Dual, SiGe, High-Linearity,
1700MHz to 2700MHz Downconversion Mixer with
Advanced Shutdown Features
RFMAIN, RFDIV, LO1, LO2 Input Power .......................+20dBm
Continuous Power Dissipation (Note 1) ..............................8.7W
Operating Case Temperature Range (Note 2)... -40°C to +105°C
Maximum Junction Temperature .....................................+150°C
Storage Temperature Range ............................ -65°C to +150°C
Lead Temperature (soldering 10s) ..................................+300°C
Soldering Temperature (reflow) .......................................+260°C
V
CC
.......................................................................-0.3V to +5.5V
RFMAIN, RFDIV, LO1, LO2,
IFM+, IFM-, IFD+, IFD- ......................... -0.3V to (V
CC
+ 0.3V)
IF_RADJ, LO_VADJ, LOSEL,
LO_TUNE1, LO_TUNE2 ...................... -0.3V to (V
CC
+ 0.3V)
RFMAIN to RFM_RTN, RFDIV to RFD_RTN.....................20mA
PD1, PD2, STBY, IF_DET_OUT,
IF_DET_CEXT ...................................... -0.3V to (V
CC
+ 0.3V)
Absolute Maximum Ratings
Note 1:
Based on junction temperature T
J
= T
C
+ (θ
JC
x V
CC
x I
CC
). This formula can be used when the temperature of the
exposed pad is known while the device is soldered down to a PCB. See the
Applications Information
section for details. The
junction temperature must not exceed +150°C.
Note 2:
T
C
is the temperature on the exposed pad of the package. T
A
is the ambient temperature of the device and PCB.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Package Thermal Characteristics
TQFN
Junction-to-Ambient Thermal Resistance θ
JA
(Notes 3, 4) ................................................................+36°C/W
Junction-to-Case Thermal Resistance θ
JC
(Notes 1, 4) ...............................................................+7.4°C/W
Note 3:
Junction temperature T
J
= T
A
+ (θ
JA
x V
CC
x I
CC
). This formula can be used when the ambient temperature of the PCB is
known. The junction temperature must not exceed +150°C.
Note 4:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
5V DC Electrical Characteristics
(Typical
Application Circuit,
V
CC
= 4.75V to 5.25V, R1 = 4.87kΩ, R3 = 154kΩ to V
CC
, RF and IF single ended ports = 50Ω to GND,
LO1 port driven from 50Ω source, P
LO
= 0dBm, f
LO
= 2350MHz, LOSEL = 5V, LO_TUNE1 = LO_TUNE2 = 1, PD1 = PD2 = STBY = 0,
T
C
= -40°C to +105°C. Typical values are at V
CC
= 5.0V, P
LO
= 0dBm, f
LO
= 2350MHz, LO_TUNE1 = LO_TUNE2 = 1, T
C
= +25°C,
unless otherwise noted.) (Notes 5, 6)
PARAMETER
Supply Voltage
SYMBOL
V
cc
f
LO
= 1800MHz,
LO_TUNE1 = 0, LO_TUNE2 = 1
f
LO
= 1900MHz,
LO_TUNE1 = 0, LO_TUNE2 = 1
Dual-Channel Operation
Supply Current
f
LO
= 2100MHz,
LO_TUNE1 = 0, LO_TUNE2 = 0
f
LO
= 2300MHz,
LO_TUNE1 = 1, LO_TUNE2 = 1
f
LO
= 2350MHz,
LO_TUNE1 = 1, LO_TUNE2 = 1
f
LO
= 2500MHz,
LO_TUNE1 = 1, LO_TUNE2 = 0
CONDITIONS
MIN
4.75
TYP
5.00
350
324
305
293
290
285
MAX
5.25
420
395
365
mA
350
350
345
UNITS
V
I
DUALCH
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Maxim Integrated
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2
MAX19757
Dual, SiGe, High-Linearity,
1700MHz to 2700MHz Downconversion Mixer with
Advanced Shutdown Features
5V DC Electrical Characteristics (continued)
(Typical
Application Circuit,
V
CC
= 4.75V to 5.25V, R1 = 4.87kΩ, R3 = 154kΩ to V
CC
, RF and IF single ended ports = 50Ω to GND,
LO1 port driven from 50Ω source, P
LO
= 0dBm, f
LO
= 2350MHz, LOSEL = 5V, LO_TUNE1 = LO_TUNE2 = 1, PD1 = PD2 = STBY = 0,
T
C
= -40°C to +105°C. Typical values are at V
CC
= 5.0V, P
LO
= 0dBm, f
LO
= 2350MHz, LO_TUNE1 = LO_TUNE2 = 1, T
C
= +25°C,
unless otherwise noted.) (Notes 5, 6)
PARAMETER
Single-Channel Operation
Supply Current
Power-Down Supply Current
Standby (STBY) Supply Current
LOSEL, PD1, PD2, STBY,
LO_TUNE1, LO_TUNE2,
Input High Voltage
LOSEL, PD1, PD2, STBY
LO_TUNE1, LO_TUNE2,
Input Low Voltage
Control Logic Input Current
SYMBOL
CONDITIONS
MIN
TYP
163
5.3
35
1.17
MAX
197
8.5
49
UNITS
mA
mA
mA
V
I
SINGLECH
PD1 = 0, PD2 = 1 or PD1 = 1, PD2 = 1
I
PD
I
STBY
V
IH
PD1 = 1, PD2 = 0
STBY = 1 in any power-down mode
V
IL
I
IL
and I
IH
V
IL
> -0.25; V
IH
< V
CC
+ 0.25V;
internal 50kΩ pulldown resistors
-50
0.5
+250
V
µA
3.3V DC Electrical Characteristics
(Typical
Application Circuit,
V
CC
= 3.1V to 3.5V, R1 = 4.87kΩ, R3 = 154kΩ to V
CC
, RF and IF single-ended ports = 50Ω to GND, LO1
port driven from 50Ω source, P
LO
= 0dBm, f
LO
= 2350MHz, LOSEL = 5V, LO_TUNE1 = LO_TUNE2 = 1, PD1 = PD2 = STBY = 0,
T
C
= -40°C to +105°C. Typical values are at V
CC
= 3.3V, P
LO
= 0dBm, f
LO
= 2350MHz, LO_TUNE1 = LO_TUNE2 = 1, T
C
= +25°C,
unless otherwise noted.) (Notes 5, 6)
PARAMETER
Supply Voltage
Dual-Channel Operation
Supply Current
Single-Channel Operation
Supply Current
Power-Down Supply Current
Standby (STBY) Supply Current
LOSEL, PD1, PD2, STBY,
LO_TUNE1, LO_TUNE2,
Input High Voltage
LOSEL, PD1, PD2, STBY,
LO_TUNE1, LO_TUNE2,
Input Low Voltage
Control Logic Input Current
SYMBOL
V
CC
I
DUALCH
Total supply current
CONDITIONS
MIN
3.1
TYP
3.3
305
163
3.5
33
1.0
MAX
3.5
385
UNITS
V
mA
mA
mA
mA
V
I
SINGLECH
PD1 = 0, PD2 = 1 or PD1 = 1, PD2 = 1
I
PD
I
STBY
V
IH
PD1 = 1, PD2 = 0
STBY = 1 in any power-down mode
V
IL
I
IL
and I
IH
V
IL
> -0.25; V
IH
< V
CC
+ 0.25V;
internal 50kΩ pulldown resistors
0.75
0 to 100
V
µA
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Maxim Integrated
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3
MAX19757
Dual, SiGe, High-Linearity,
1700MHz to 2700MHz Downconversion Mixer with
Advanced Shutdown Features
SYMBOL
f
RF
f
LO
(Note 7)
(Note 7)
Using Mini-Circuits TC4-1W-17 4:1
transformer as defined in the Typical
Application Circuit;
IF matching components
affect the IF frequency range
Using alternative Mini-Circuits
TC4-1W-7A 4:1 transformer as defined in
the
Typical Application Circuit,
IF matching
components affect the IF frequency range
CONDITIONS
MIN
1700
1800
TYP
MAX
2700
2600
UNITS
MHz
MHz
Recommended AC Operating Conditions
PARAMETER
RF Frequency
LO Frequency
100
500
MHz
IF Frequency (Note 7)
f
IF
50
250
LO Drive Level
P
LO
-3
+3
dBm
5V AC Electrical Characteristics (Low-Side LO)
(Typical
Application Circuit, R1 = 4.87kΩ, R3 = 154kΩ to V
CC
, V
CC
= 4.75V to 5.25V, RF and LO ports are driven from 50Ω sources,
P
RF
= -5dBm, f
RF
= 2550MHz, f
LO
= 2350MHz, f
IF
= 200MHz, P
LO1
= -3dBm to +3dBm, LOSEL = 1
,
LO_TUNE1 = LO_TUNE2 = 1,
PD1 = PD2 = STBY = 0, T
C
= -40°C to +105°C. Typical values are at V
CC
= 5.0V, P
RF
= -5dBm, P
LO
= 0dBm, f
RF
= 2550MHz,
f
LO
= 2350MHz, LO_TUNE1 = LO_TUNE2 = 1, f
IF
= 200MHz, and T
C
= +25°C.) (Notes 5, 6)
PARAMETER
Conversion Gain
RF Gain Flatness
Conversion Gain Flatness
Gain Variation Over Temperature
1σ Gain Deviation
Input 1dB Compression Point
Output 1dB Compression Point
Input 0.1dB Compression Point
Small-Signal Compression Under
Blocking Conditions
Input Third-Order Intercept Point
Input Third-Order Intercept Point
1σ Deviation
Input Third-Order Intercept Point
Variation Over Temperature
Output Third-Order Intercept
Point
IIP3
IIP3
dev
TC
IIP3
OIP3
IP
1dB
OP
1dB
IP
0.1dB
G
FREQ
TC
CG
SYMBOL
G
C
T
C
= +25°C
Flatness over any 120MHz portion of the RF
band, f
IF
= 200MHz
Flatness over a 100MHz RF band,
f
IF
= 200 ±50MHz (Note 9)
T
C
= -40°C to +105°C
T
C
= -40°C to +105°C
(Notes 8, 9)
(Notes 8, 9)
(Note 9)
P
RF
= -5dBm, f
BLOCKER
= 2545MHz,
P
BLOCKER
= 8dBm (Note 8)
f
RF1
-f
RF2
= 1MHz,
P
RF
= -5dBm/tone
(Notes 9,10)
T
C
= +25°C
23.9
23.5
11
17
4
CONDITIONS
MIN
7.4
8.1
TYP
8.8
8.8
0.10
0.34
-0.010
0.082
13.1
20.9
5.6
0.4
25.3
25.3
0.17
0.0035
30.8
30.4
34.1
34.1
0.55
MAX
9.9
9.7
UNITS
dB
dB
dB
dB/°C
dB
dBm
dBm
dBm
dB
dBm
dBm
dB/°C
dBm
f
RF1
-f
RF2
= 1MHz, P
RF
= -5dBm/tone
f
RF1
-f
RF2
= 1MHz, P
RF
= -5dBm/tone,
T
C
= -40°C to +105°C
f
RF1
-f
RF2
= 1MHz,
P
RF
= -5dBm/tone
(Notes 9, 10)
T
C
= +25°C
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Maxim Integrated
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4
MAX19757
Dual, SiGe, High-Linearity,
1700MHz to 2700MHz Downconversion Mixer with
Advanced Shutdown Features
5V AC Electrical Characteristics (Low-Side LO) (continued)
(Typical
Application Circuit, R1 = 4.87kΩ, R3 = 154kΩ to V
CC
, V
CC
= 4.75V to 5.25V, RF and LO ports are driven from 50Ω sources,
P
RF
= -5dBm, f
RF
= 2550MHz, f
LO
= 2350MHz, f
IF
= 200MHz, P
LO1
= -3dBm to +3dBm, LOSEL = 1
,
LO_TUNE1 = LO_TUNE2 = 1,
PD1 = PD2 = STBY = 0, T
C
= -40°C to +105°C. Typical values are at V
CC
= 5.0V, P
RF
= -5dBm, P
LO
= 0dBm, f
RF
= 2550MHz,
f
LO
= 2350MHz, LO_TUNE1 = LO_TUNE2 = 1, f
IF
= 200MHz, and T
C
= +25°C.) (Notes 5, 6)
PARAMETER
Noise Figure, Single Sideband
(Note 9)
Noise Figure Temperature
Coefficient
1σ NF deviation
SYMBOL
NF
SSB
CONDITIONS
T
C
= +25°C, no blockers present, RF trace
de-embedded
No blockers present, RF trace de-
embedded, T
C
= -40°C to +100°C
Single sideband, no blockers present,
T
C
= -40°C to +105°C
P
BLOCKER
= 8dBm, f
BLOCKER
= 2300MHz,
f
RF
= 2200MHz, f
LO
= 1950MHz,
f
IFDESIRED
= 250MHz, f
IFBLOCKER
=
350MHz P
LO
= 0dBm, V
CC
= 5.0V,
T
C
= +25°C (Notes 9, 11)
f
SPUR
= f
LO
+
100MHz
f
SPUR
= f
LO
+
66.667MHz
P
LO
= 3dBm (Note 9)
P
LO
= 3dBm (Note 9)
P
LO
= 3dBm (Note 9)
P
LO
= 3dBm (Note 9)
P
LO
= 3dBm (Notes 9, 10)
P
LO
= 3dBm, F
LO
= 2150MHz
,
(Note 10)
P
LO
= 3dBm
(Notes 9, 10)
P
LO1
= 3dBm, P
LO2
= 3dBm, f
LO1
-f
LO2
=
1MHz, P
RF
= -5dBm (Note 12)
P
RF
= -10dBm, RFMAIN (RFDIV) power
measured at IFDIV (IFMAIN), relative to
IFMAIN (IFDIV), all unused ports terminated
to 50Ω (Notes 9, 10)
50% of LOSEL to IF settled within two
degrees
0dBm at RF & LO ports; IF output power
reduction from PD1 and PD2 switched from
0 to 1
40
30
30
P
RF
= -10dBm
P
RF
= -5dBm
(Note 10)
P
RF
= -10dBm
P
RF
= -5dBm
(Note 10)
63
58
75
65
MIN
TYP
10.4
10.4
0.0166
0.09
MAX
10.9
dB
12.2
dB/°C
dB
UNITS
TC
NF
NF
STD
Noise Figure with Blocker
NF
B
18.3
20
dB
2RF - 2LO Spur Rejection
(Note 9)
3RF - 3LO Spur Rejection
(Note 9)
LO Leakage at RF Port
2LO Leakage at RF Port
3LO Leakage at RF Port
4LO Leakage at RF Port
LO Leakage at IF Port
LO Leakage at IF Port
2LO Leakage at IF Port
RF to IF Isolation
LO1 to LO2 Isolation
73
68
91
81
-39.8
-24.3
-46
-31
-25.5
-19.9
-37
37.3
50
-34
-20
-40
-22
-23
dBc
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dB
dB
dBc
2x2
3x3
Channel-to-Channel Isolation
40
46
dB
LO Switching Time
Power-Down IF Attenuation
0.24
61
µs
dB
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