Operating Temperature Range ........................... -40°C to +85°C
Junction Temperature ......................................................+150°C
Storage Temperature Range ............................ -65°C to +150°C
Lead Temperature (soldering, 10s) ................................. +300°C
Soldering Temperature (reflow) .......................................+260°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these
or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Package Thermal Characteristics
(Note 1)
TDFN
Junction-to-Ambient Thermal Resistance (θ
JA
) ..........84°C/W
Junction-to-Case Thermal Resistance (θ
JC
) ...............37°C/W
Note 1:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
Electrical Characteristics
(V
CC
= 3.0V to 5.5V, T
A
= T
MIN
to T
MAX
, unless otherwise noted. Typical values are at V
CC
= 5.0V, T
A
= +25°C.) (Note 2)
PARAMETER
POWER SUPPLY
Power-Supply Range
V
CC
V
CB0
> V
IH
(Note 6)
V
CB0
= 0V (Note 3)
V
CB0
= V
CB1
= V
CC
= 5.25V, CM mode
Supply Current
I
CC
V
CB0
= V
CC
= 5.25V, V
CB1
= 0V, PM mode
V
CB0
= 0V, V
CB1
= V
CC
= 5.25V (MAX14618)
V
CB0
= V
CB1
= 0V, AM mode
ANALOG SWITCH
Analog-Signal Range
On-Resistance TDP/TDM Switch
On-Resistance Match Between
Channels TDP/TDM Switch
On-Resistance Flatness
TDP/TDM Switch
On-Resistance of DP/DM Short
Off-Leakage Current
On-Leakage Current
DYNAMIC PERFORMANCE (Note 4)
Turn-On Time
t
ON
V
TDP
or V
TDM
= 1.5V, R
L
= 300Ω,
C
L
= 35pF, V
IH
= V
CC,
V
IL
= 0V, Figure 1
300
800
µs
V
DP
, V
DM
R
ON
∆R
ON
R
FLAT
R
SHORT
I
TDPOFF,
I
TDMOFF
I
DPON
,
I
DMON
V
TDP
= V
TDM
= 0V to V
CC
,
I
TDP
= I
TDM
= 10mA
V
CC
= 5.0V, V
DP
= V
DM
= 400mV,
I
DP
= I
DM
= 10mA
V
CC
= 5.0V, V
DP
= V
DM
= 0 to V
CC
,
I
DP
= I
DM
= 10mA
V
CB0
= 0V, V
CB1
= V
CC
, V
DP
= 1V,
R
DM
= 20kΩ
V
CC
= 3.6V, V
DP
= V
DM
= 0.3V to 3.3V,
V
TDP
= V
TDM
= 3.3V to 0.3V
V
CC
= 3.6V, V
DP
= V
DM
= 3.3V to 0.3V,
V
CB_
= V
CC
-250
-250
0
3.5
0.1
0.1
70
120
+250
+250
V
CC
6.5
V
Ω
Ω
Ω
Ω
nA
nA
V
CB0
= 0V, V
CB1
= V
CC
= 5.25V, FM mode
3.0
4.75
50
4
10
130
130
5.5
5.25
100
20
50
200
200
µA
V
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
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Maxim Integrated
│
2
MAX14600–MAX14605/
MAX14618
Electrical Characteristics (continued)
USB Host Charger Identification/
Adapter Emulators
(V
CC
= 3.0V to 5.5V, T
A
= T
MIN
to T
MAX
, unless otherwise noted. Typical values are at V
CC
= 5.0V, T
A
= +25°C.) (Note 2)
PARAMETER
Turn-Off Time
TDP, TDM Switch Propagation
Delay
Output Skew
TDP, TDM Off-Capacitance
DP, DM On-Capacitance
(Connected to TDP, TDM)
-3dB Bandwidth
Off-Isolation
Crosstalk
DPC INTERNAL RESISTORS
DP/DM Short Pulldown
RP1/RP2 Ratio
RP1 + RP2 Resistance
RM1/RM2 Ratio
RM1 + RM2 Resistance
DPC COMPARATORS (Note 4)
DM1 Comparator Threshold
DM1 Comparator Hysteresis
DM2 Comparator Threshold
DM2 Comparator Hysteresis
DP Comparator Threshold
DP Comparator Hysteresis
CDP INTERNAL RESISTORS
DP Pulldown Resistor
DM Pulldown Resistor
V
DM_SRC
Voltage
V
DAT_REF
Voltage
V
LGC
Voltage
I
DP_SINK
Current
R
DP_DWN
R
DM_DWN
V
DM_SRC
V
DAT_REF
V
LGC
I
DP_SINK
V
DP
= 0.15V to 3.6V
I
LOAD
= 0 to 200µA
0.5
0.25
0.8
50
14.25
14.25
24.8
24.8
0.7
0.4
2.0
150
kΩ
kΩ
V
V
V
µA
V
DPR
DP rising
45
V
DM2F
DM falling
6.31
V
DM1F
DM falling
40
41
1
7
1
46
1
47
7.6
42
%V
CC
%
%V
CC
%
%V
CC
%
R
PD
RT
RP
R
RP
RT
RM
R
RM
320
1.4
85
0.85
60
500
1.5
125
0.86
93
730
1.55
170
0.87
125
kΩ
—
kΩ
—
kΩ
SYMBOL
t
OFF
t
PLH
, t
PHL
t
SK
C
OFF
C
ON
BW
V
ISO
V
CT
CONDITIONS
V
TDP
or V
TDM
= 1.5V, R
L
= 300Ω,
C
L
= 35pF, V
IH
= V
CC,
V
IL
= 0V, Figure 1
(Note 5)
R
L
= R
S
= 50Ω
Skew between DP and DM when
connected to TDP and TDM,
R
L
= R
S
= 50Ω, Figure 2
f
SW
= 1MHz, V
BIAS
= 0V, V
IN
= 500mV
P-P
f
SW
= 240MHz, V
BIAS
= 0V
,
V
IN
= 500mV
P-P
R
L
= R
S
= 50Ω
V
TDP
or V
DP
= 0dBm, R
L
= R
S
= 50Ω,
f
SW
= 250MHz, Figure 3
V
TDP
or V
DP
= 0dBm, R
L
= R
S
= 50Ω,
f
SW
= 250MHz, Figure 3
MIN
TYP
1
MAX
5
UNITS
µs
60
40
2.0
4.0
1000
-20
-25
5.5
ps
ps
pF
pF
MHz
dB
dB
CDP LOW-SPEED COMPARATORS
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Maxim Integrated
│
3
MAX14600–MAX14605/
MAX14618
Electrical Characteristics (continued)
USB Host Charger Identification/
Adapter Emulators
(V
CC
= 3.0V to 5.5V, T
A
= T
MIN
to T
MAX
, unless otherwise noted. Typical values are at V
CC
= 5.0V, T
A
= +25°C.) (Note 2)
PARAMETER
LOGIC INPUTS (CB0, CB1)
CB0/CB1 Input Logic-High
CB0/CB1 Input Logic-Low
CB0/CB1 Input Leakage Current
CEN/CEN
OUTPUTS
V
BUS
Toggle Time
CEN
Output Logic-High Voltage
CEN
Output Leakage Current
CEN Output Logic-Low Voltage
CEN Output Leakage Current
ESD PROTECTION
ESD Protection Level
V
ESD
HBM
±2
kV
Note 2:
All units are 100% production tested at T
A
= +25°C. Specifications over temperature are guaranteed by design.
Note 3:
The device is operational from 3.0V to 5.5V. However, to have the valid Apple resistor-divider network, the V
CC
supply must
stay within 4.75V to 5.25V.
Note 4:
Guaranteed by design.
Note 5:
Does not include the delay by the state machine.
Note 6:
For BC1.2 CDP compliance, VCC,MIN = 4.75V, VCC,MAX = 5.25V.