AP30P10GH-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
▼
Lower Gate Charge
▼
Simple Drive Requirement
▼
Fast Switching Characteristic
▼
RoHS Compliant & Halogen-Free
G
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
D
BV
DSS
R
DS(ON)
I
D
-100V
80mΩ
-25A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low on-
resistance and cost-effectiveness.
The TO-252 package is widely preferred for commercial-industrial
surface mount applications and using infrared reflow technique and
suited for high current application due to the low connection resistance.
G
D
S
TO-252(H)
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
P
D
@T
A
=25℃
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Total Power Dissipation
3
Storage Temperature Range
Operating Junction Temperature Range
Rating
-100
+20
-25
-15
-80
89
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient (PCB mount)
3
Value
1.4
62.5
Units
℃/W
℃/W
1
201203051
Data and specifications subject to change without notice
AP30P10GH-HF
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
R
DS(ON)
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Test Conditions
V
GS
=0V, I
D
=-250uA
V
GS
=-10V, I
D
=-12A
V
GS
=-4.5V, I
D
=-8A
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current
Gate-Source Leakage
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
=V
GS
, I
D
=-250uA
V
DS
=-10V, I
D
=-12A
V
DS
=-80V, V
GS
=0V
V
GS
= +20V, V
DS
=0V
I
D
=-18A
V
DS
=-80V
V
GS
=-10V
V
DS
=-50V
I
D
=-18A
R
G
=3.3Ω
V
GS
=-10V
V
GS
=0V
V
DS
=-25V
f=1.0MHz
Min.
-100
-
-
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
23
-
-
50
7.5
16.5
12
33
61
78
185
140
Max. Units
-
80
100
-3
-
-25
+100
80
-
-
-
-
-
-
-
-
V
mΩ
mΩ
V
S
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
2580 4130
Source-Drain Diode
Symbol
V
SD
t
rr
Q
rr
Parameter
Forward On Voltage
2
Reverse Recovery Time
Reverse Recovery Charge
Test Conditions
I
S
=-18A, V
GS
=0V
I
S
=-18A, V
GS
=0V,
dI/dt=-100A/µs
Min.
-
-
-
Typ.
-
53
125
Max. Units
-1.3
-
-
V
ns
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in
2
copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP30P10GH-HF
80
60
T
C
= 25 C
o
-I
D
, Drain Current (A)
60
-I
D
, Drain Current (A)
-10V
- 7 .0V
- 6 .0V
- 5.0 V
T
C
=150
o
C
50
-10V
-7.0V
-6.0V
-5.0V
V
G
= -4.0V
40
40
V
G
= - 4 .0 V
30
20
20
10
0
0
4
8
12
16
20
0
0
4
8
12
16
20
-V
DS
, Drain-to-Source Voltage (V)
-V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
80
2.0
76
I
D
= -8 A
T
C
=25
℃
Normalized R
DS(ON)
2
4
6
8
10
1.6
I
D
= - 12 A
V
G
= -10V
R
DS(ON)
(m
Ω
)
72
1.2
68
0.8
64
60
0.4
-50
0
50
100
150
-V
GS
, Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
1.4
25
1.2
20
Normalized -V
GS(th)
1.0
-I
S
(A)
15
T
j
=150
o
C
10
T
j
=25
o
C
0.8
0.6
5
0.4
0
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.2
-50
0
50
100
150
-V
SD
, Source-to-Drain Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP30P10GH-HF
f=1.0MHz
12
4000
-V
GS
, Gate to Source Voltage (V)
10
V
DS
= - 80 V
I
D
= - 18 A
3000
8
C
iss
C (pF)
6
2000
4
1000
2
0
0
10
20
30
40
50
60
0
1
5
9
13
17
21
25
C
oss
C
rss
29
Q
G
, Total Gate Charge (nC)
-V
DS
, Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
100
1
100us
10
Normalized Thermal Response (R
thjc
)
Operation in this area
limited by R
DS(ON)
Duty factor=0.5
0.2
-I
D
(A)
1ms
10ms
100ms
DC
T
c
=25 C
Single Pulse
0
0.1
1
10
100
1000
0.1
0.1
0.05
P
DM
0.02
1
t
T
0.01
o
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
-V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
V
DS
90%
V
G
Q
G
-10V
Q
GS
Q
GD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
f
Charge
Q
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
4
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