AP30N30W
Pb Free Plating Product
Advanced Power
Electronics Corp.
▼
100% Avalanche Test
▼
Simple Drive Requirement
▼
Lower On-resistance
▼
RoHS Compliant
G
S
D
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
BV
DSS
R
DS(ON)
I
D
250V
68mΩ
36A
Description
AP30N30 from APEC provide the designer with the best combination of fast
switching , low on-resistance and cost-effectiveness .
The TO-3P package is preferred for commercial & industrial applications
with higher power level preclusion than TO-220 device.
G
D
S
TO-3P
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@T
C
=25℃
I
D
@T
C
=100℃
I
DM
P
D
@T
C
=25℃
E
AS
I
AR
T
STG
T
J
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
1
Total Power Dissipation
Linear Derating Factor
Single Pulse Avalanche Energy
3
Avalanche Current
Storage Temperature Range
Operating Junction Temperature Range
Rating
250
±30
36
23
144
208
1.7
450
30
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
mJ
A
℃
℃
Thermal Data
Symbol
Rthj-c
Rthj-a
Parameter
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Value
0.6
40
Units
℃/W
℃/W
Data and specifications subject to change without notice
200916052-1/4
AP30N30W
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
BV
DSS
ΔBV
DSS
/ΔT
j
Parameter
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
2
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (T
j
=25 C)
Drain-Source Leakage Current (T
j
=150
o
C)
o
Test Conditions
V
GS
=0V, I
D
=1mA
Min.
250
-
-
1.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Min.
-
-
-
Typ.
-
0.24
-
-
23
-
-
-
63
19
14
28
36
84
45
550
6
1.9
Typ.
-
235
2.24
Max. Units
-
-
68
3.5
-
10
100
±1
100
-
-
-
-
-
-
-
-
3
V
V/℃
mΩ
V
S
uA
uA
uA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
Ω
Breakdown Voltage Temperature Coefficient
Reference to 25℃, I
D
=1mA
R
DS(ON)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
R
g
Symbol
V
SD
t
rr
Q
rr
V
GS
=10V, I
D
=15A
V
DS
=V
GS
, I
D
=250uA
V
DS
=10V, I
D
=15A
V
DS
=250V, V
GS
=0V
V
DS
=200V ,V
GS
=0V
V
GS
= ±30V
I
D
=15A
V
DS
=200V
V
GS
=10V
V
DS
=125V
I
D
=15A
R
G
=10Ω,V
GS
=10V
R
D
=8.3Ω
V
GS
=0V
V
DS
=25V
f=1.0MHz
f=1.0MHz
Test Conditions
I
S
=36A, V
GS
=0V
I
S
=15A, V
GS
=0V
dI/dt=100A/µs
Gate-Source Leakage
Total Gate Charge
2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Parameter
Forward On Voltage
2
Reverse Recovery Time
2
4290 6900
Source-Drain Diode
Max. Units
1.5
-
-
V
ns
µC
Reverse Recovery Charge
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
3.Starting T
j
=25
o
C , V
DD
=50V , L=1mH , R
G
=25Ω , I
AS
=30A.
2/4
AP30N30W
50
40
T
C
= 25 C
40
o
I
D
, Drain Current (A)
10V
7.0V
6.0V
T
C
= 150
o
C
30
I
D
, Drain Current (A)
10V
7.0V
6.0V
5.0V
30
20
20
5.0V
V
G
=4. 5 V
10
10
V
G
=4. 5 V
0
0
2
4
6
8
0
0
2
4
6
8
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
160
2.8
I
D
=15A
T
C
=25
o
C
R
DS(ON)
(m
Ω
)
Normalized R
DS(ON)
120
2.3
I
D
=15A
V
G
=10V
1.8
1.3
80
0.8
40
2
4
6
8
10
0.3
-50
0
50
100
150
V
GS
Gate-to-Source Voltage (V)
T
j
, Junction Temperature ( C)
o
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2
15
12
I
S
(A)
9
Normalized V
GS(th)
(V)
1.2
1.5
T
j
=150
o
C
6
1
T
j
=25 C
o
0.5
3
0
0
0.2
0.4
0.6
0.8
1
0
-50
0
50
100
150
V
SD
, Source-to-Drain Voltage (V)
T
j
,Junction Temperature ( C)
o
Fig 5. Forward Characteristic of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3/4
AP30N30W
f=1.0MHz
16
10000
I
D
= 15 A
V
GS
, Gate to Source Voltage (V)
12
C
iss
1000
V
DS
= 120 V
V
DS
= 160 V
V
DS
= 200 V
C (pF)
C
oss
8
100
4
10
C
rss
0
0
20
40
60
80
1
1
5
9
13
17
21
25
29
Q
G
, Total Gate Charge (nC)
V
DS
,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
100
0.2
I
D
(A)
100us
10
0.1
0.1
0.05
1
T
c
=25 C
Single Pulse
0.1
o
1ms
10ms
100ms
1s
DC
0.02
P
DM
t
0.01
T
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
Single Pulse
0.01
1
10
100
1000
0.00001
0.0001
0.001
0.01
0.1
1
10
V
DS
, Drain-to-Source Voltage (V)
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
40
V
DS
=5V
30
V
G
T
j
=25
o
C
T
j
=150 C
o
Q
G
4.5V
I
D
, Drain Current (A)
20
Q
GS
Q
GD
10
Charge
0
0
2
4
6
8
Q
V
GS
, Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4/4
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