AP30G120SW
RoHS-compliant Product
Advanced Power
Electronics Corp.
Features
▼
High Speed Switching
▼
Low Saturation Voltage
V
CE(sat)
=3.0V@I
C
=30A
▼
CO-PAK, IGBT With FRD
▼
RoHS Complian
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR WITH FRD.
V
CES
I
C
C
G
C
E
Rating
1200
+30
60
30
120
20
10
40
208
-55 to 150
-55 to 150
300
1200V
30A
TO-3P
G
E
Absolute Maximum Ratings
Symbol
V
CES
V
GE
I
C
@T
C
=25℃
I
C
@T
C
=100℃
I
CM
I
F
@T
C
=25℃
I
F
@T
C
=100℃
I
FM
P
D
@T
C
=25℃
T
STG
T
J
T
L
Gate-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Forward Current
Diode Pulse Forward Current
Maximum Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Lead Temp. for Soldering Purposes
, 1/8" from case for 5 seconds .
1
Parameter
Collector-Emitter Voltage
Units
V
V
A
A
A
A
A
A
W
℃
℃
℃
Notes:
1.Pulse width limited by max . junction temperature .
Thermal Data
Symbol
Rthj-c(IGBT)
Rthj-a
Parameter
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Value
0.6
1.5
40
Units
℃/W
℃/W
℃/W
Rthj-c(Diode) Thermal Resistance Junction-Case
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
I
GES
I
CES
V
CE(sat)
V
GE(th)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oes
C
res
V
F
V
F
t
rr
Q
rr
Parameter
Gate-to-Emitter Leakage Current
Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate Threshold Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Voltage
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GE
=0V
V
CE
=30V
f=1.0MHz
I
F
=10A
I
F
=20A
I
F
=10A
di/dt = 100 A/µs
Test Conditions
V
GE
=+30V, V
CE
=0V
V
CE
=1200V, V
GE
=0V
V
GE
=15V, I
C
=30A
V
GE
=15V, I
C
=60A
V
CE
=V
GE
, I
C
=250uA
I
C
=30A
V
CC
=500V
V
GE
=15V
V
CC
=600V,
I
c
=30A,
V
GE
=15V,
R
G
=5Ω,
Inductive Load
Min.
-
-
-
-
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
3
3.8
-
63
12
32
40
45
125
430
1.3
3.1
1400
120
15
1.7
2.1
140
0.8
Max. Units
+500
nA
1
3.6
-
7
100
-
-
-
-
-
860
-
-
2240
-
-
2.5
2.9
-
-
mA
V
V
V
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
pF
pF
pF
V
V
ns
uC
Electrical Characteristics of Diode@T
j
=25℃(unless otherwise specified)
Data and specifications subject to change without notice
1
201211302
AP30G120SW
160
120
T
C
=25 C
I
C
, Collector Current (A)
120
o
20V
18V
15V
I
C
, Collector Current (A)
T
C
=150
o
C
100
20V
18V
15V
12V
80
80
12V
60
40
V
GE
=10V
40
V
GE
=10V
20
0
0
4
8
12
16
20
24
0
0
4
8
12
16
20
V
CE
, Collector-Emitter Voltage (V)
V
CE
, Collector-Emitter Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
120
6
V
GE
=15V
100
V
GE
= 15 V
V
CE(sat) ,
Saturation Voltage(V)
5
I
C ,
Collector Current(A)
80
T
C
=25
℃
T
C
=150
℃
I
C
= 60 A
4
60
I
C
=30A
3
40
2
20
0
0
2
4
6
8
10
1
0
40
80
120
160
V
CE
, Collector-Emitter Voltage (V)
Junction Temperature ( C)
o
Fig 3. Typical Saturation Voltage
Characteristics
1.4
2400
Fig 4. Typical Collector- Emitter Voltage
v.s. Junction Temperature
f=1.0MHz
2000
Normalized V
GE(th)
(V)
1.1
Capacitance (pF)
1600
C
ies
1200
0.8
800
400
0.5
-50
0
50
100
150
0
1
10
C
oes
C
res
100
Junction Temperature (
o
C )
V
CE
, Collector-Emitter Voltage (V)
Fig 5. Gate Threshold Voltage
Fig 6. Typical Capacitance Characterisitics
v.s. Junction Temperature
2
AP30G120SW
1000
1
V
GE
=15V
T
C
=125
o
C
I
C
, Peak Collector Current(A)
100
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
0.2
0.1
0.1
0.05
P
DM
0.02
10
t
T
0.01
Safe Operating Area
1
1
10
100
1000
10000
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
V
CE ,
Collector-Emitter Voltage(V)
t , Pulse Width (s)
Fig 7. Turn-off SOA
Fig 8. Effective Transient Thermal
Impedance
10
10
T
C
= 25 C
V
CE
, Collector-Emitter Voltage(V)
V
CE
, Collector-Emitter Voltage(V)
o
T
C
= 150
o
C
8
8
6
6
I
C
= 60 A
4
4
I
C
= 60 A
I
C
= 30 A
I
C
= 15 A
I
C
= 30 A
I
C
= 15 A
2
2
0
4
8
12
16
20
0
4
8
12
16
20
V
GE
, Gate-Emitter Voltage(V)
V
GE
, Gate-Emitter Voltage(V)
Fig 9. Saturation Voltage vs. V
GE
Fig 10. Saturation Voltage vs. V
GE
20
16
I
C
= 30A
V
CC
=500V
16
V
GE
, Gate -Emitter Voltage (V)
I
F
, Forward Current (A)
12
12
T
j
=150
o
C
T
j
=25
o
C
8
8
4
4
0
0
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
0
0
20
40
60
80
V
F
, Forward Voltage (V)
Q
G
, Gate Charge (nC)
Fig11. Forward Characteristic of
Fig 12. Gate Charge Characterisitics
Diode
3
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