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MA3X727_13

产品描述Silicon epitaxial planar type For super high speed switching For small current rectification
文件大小338KB,共3页
制造商Panasonic(松下)
官网地址http://www.panasonic.co.jp/semicon/e-index.html
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MA3X727_13概述

Silicon epitaxial planar type For super high speed switching For small current rectification

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This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA3X727
(MA727)
Silicon epitaxial planar type
Unit: mm
For super high speed switching
For small current rectification
Features
0.40
+0.10
–0.05
3
1.50
+0.25
–0.05
2.8
+0.2
–0.3
0.16
+0.10
–0.06
M
ain
Di
sc te
on na
tin nc
ue e/
d
Reverse voltage V
R
=
50 V is guaranteed
Forward current (Average) I
F(AV)
=
200 mA rectification is
possible
1
2
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
10˚
1.1
+0.2
–0.1
Reverse voltage
V
R
50
50
V
V
0 to 0.1
Parameter
Symbol
Rating
Unit
1.1
+0.3
–0.1
Absolute Maximum Ratings
T
a
=
25°C
Repetitive peak reverse voltage
Peak forward current
V
RRM
I
FM
I
F(AV)
I
FSM
T
j
Forward current (Average)
Non-repetitive peak forward
surge current
*
Junction temperature
Storage temperature
T
stg
−55
to
+150
Note) *: The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
on
Parameter
tin
Symbol
V
F1
V
F2
I
R
t
rr
C
t
ue
Electrical Characteristics
T
a
=
25°C
±
3°C
isc
Forward voltage
an
Reverse current
en
Terminal capacitance
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body
and the leakage of current from the operating equipment.
3. Absolute frequency of input and output is 1 GHz.
4. *: t
rr
measurement circuit
Bias Application Unit (N-50BU)
t
r
10%
Input Pulse
t
p
t
I
F
t
rr
t
I
rr
=
10 mA
I
F
=
100 mA
I
R
=
100 mA
R
L
=
100
Output Pulse
Ma
int
Reverse recovery time
*
A
V
R
Pulse Generator
(PG-10N)
R
s
=
50
Wave Form Analyzer
(SAS-8130)
R
i
=
50
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300
200
1
mA
mA
A
EIAJ: SC-59
(0.65)
1: Anode
2: N.C.
3: Cathode
Mini3-G1 Package
Marking Symbol: M1Z
Internal Connection
150
°C
°C
3
1
2
Conditions
Min
Typ
Max
0.36
Unit
V
I
F
=
30 mA
V
R
=
50 V
/D
I
F
=
200 mA
0.55
200
ce
µA
pF
ns
V
R
=
0 V, f
=
1 MHz
30
I
F
=
I
R
=
100 mA
I
rr
=
10 mA, R
L
=
100
3.0
90%
t
p
=
2
µs
t
r
=
0.35 ns
δ =
0.05
Note) The part number in the parenthesis shows conventional part number.
Publication date: April 2004
SKH00082CED
0.4
±0.2
V
1
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