MDO500-20N1
High Voltage Standard Rectifier Module
V
RRM
I
FAV
V
F
=
=
=
2000 V
560 A
0.98 V
Single Diode
Part number
MDO500-20N1
Backside: isolated
2
3
Features / Advantages:
●
Planar passivated chips
●
Very low leakage current
●
Very low forward voltage drop
●
Improved thermal behaviour
Applications:
●
Diode for main rectification
●
For single and three phase
bridge configurations
●
Supplies for DC power equipment
●
Input rectifiers for PWM inverter
●
Battery DC power supplies
●
Field supply for DC motors
Package:
Y1
●
Isolation Voltage: 3600 V~
●
Industry standard outline
●
RoHS compliant
●
Base plate: Copper
internally DCB isolated
●
Advanced power cycling
Disclaimer Notice
Information furnished is believed to be accurate and reliable. However, users should independently
evaluate the suitability of and test each product selected for their own applications. Littelfuse products are not designed for,
and may not be used in, all applications. Read complete Disclaimer Notice at
www.littelfuse.com/disclaimer-electronics.
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191204c
© 2019 IXYS all rights reserved
MDO500-20N1
Rectifier
Symbol
V
RSM
V
RRM
I
R
V
F
Definition
max. repetitive reverse blocking voltage
reverse current
Ratings
Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 140°C
T
VJ
= 25°C
T
VJ
= 125 °C
T
VJ
= 140 °C
d = 0.5
T
VJ
= 140 °C
0.80
0.38
0.024
T
C
= 25°C
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 140 °C
V
R
= 0 V
T
VJ
= 45°C
V
R
= 0 V
T
VJ
= 140 °C
V
R
= 0 V
T
VJ
= 25°C
576
1600
15.0
16.2
12.8
13.8
min.
typ.
max. non-repetitive reverse blocking voltage
max. Unit
2100
V
2000
1
30
1.09
1.24
0.98
1.17
560
V
mA
mA
V
V
V
V
A
A
V
mΩ
K/W
W
kA
kA
kA
kA
V
R
= 2000 V
V
R
= 2000 V
I
F
= 500 A
I
F
= 1000 A
I
F
= 500 A
I
F
= 1000 A
forward voltage drop
I
FAV
I
F(RMS)
V
F0
r
F
R
thJC
R
thCH
P
tot
I
FSM
average forward current
RMS forward current
threshold voltage
slope resistance
T
C
= 85 °C
180° sine
for power loss calculation only
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
max. forward surge current
0.072 K/W
I²t
value for fusing
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
1.13 MA²s
1.09 MA²s
812.8 kA²s
788.8 kA²s
pF
C
J
junction capacitance
V
R
= 700 V; f = 1 MHz
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191204c
© 2019 IXYS all rights reserved
MDO500-20N1
Package
Symbol
I
RMS
T
VJ
T
op
T
stg
Weight
M
D
M
T
d
Spp/App
d
Spb/Apb
V
ISOL
isolation voltage
t = 1 second
t = 1 minute
50/60 Hz, RMS; I
ISOL
≤
1 mA
mounting torque
terminal torque
creepage distance on surface | striking distance through air
terminal to terminal
terminal to backside
Y1
Definition
RMS current
virtual junction temperature
operation temperature
storage temperature
Ratings
Conditions
per terminal
min.
-40
-40
-40
typ.
max.
600
140
125
125
Unit
A
°C
°C
°C
g
Nm
Nm
mm
mm
V
V
650
4.5
11
16.0
25.0
3600
3000
7
13
Production
Index (PI)
Date Code
(DC)
yywwAA
Circuit
Part Number
Lot.No: xxxxxx
Data Matrix:
part no.
(1-19), DC +
PI
(20-25),
lot.no.#
(26-31),
blank
(32),
serial no.#
(33-36)
Ordering
Standard
Ordering Number
MDO500-20N1
Marking on Product
MDO500-20N1
Delivery Mode
Box
Quantity
2
Code No.
467200
Similar Part
MDO500-12N1
MDO500-14N1
MDO500-16N1
MDO500-18N1
Package
Y1-2-CU
Y1-2-CU
Y1-2-CU
Y1-2-CU
Voltage class
1200
1400
1600
1800
MDO500-22N1
Y1-2-CU
2200
Equivalent Circuits for Simulation
I
V
0
R
0
threshold voltage
slope resistance *
Rectifier
* on die level
T
VJ
= 140°C
V
0 max
R
0 max
0.8
0.19
V
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191204c
© 2019 IXYS all rights reserved
MDO500-20N1
Outlines Y1
2x M8
+0
-1,4
49
15
±1
52
10
22.5
35
28.5
4567
50
2
6.2
80
92
3
2
3
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
38
43
20191204c
© 2019 IXYS all rights reserved
MDO500-20N1
Rectifier
14000
12000
10000
50 Hz
80 % V
RRM
T
VJ
= 45°C
T
VJ
= 140°C
10
7
V
R
= 0V
1000
DC
180° sin
120°
60°
30°
800
I
TSM
8000
It
10
6
2
I
FAVM
600
T
VJ
= 45°C
T
VJ
= 140°C
[A]
6000
4000
2000
0
0.001
As
2
[A]
400
200
10
5
0.01
0.1
1
1
10
0
0
25
50
75
100 125 150
t
[s]
Fig. 1 Surge overload current
I
FSM
: Crest value, t: duration
1200
t
[ms]
Fig. 2 I t versus time (1-10 ms)
2
T
C
[°C]
Fig. 3 Maximum forward current
at case temperature
1600
R
thKA
K/W
1000
800
P
tot
600
0.03
0.07
0.12
0.2
0.3
0.4
0.6
DC
180° sin
120°
60°
30°
1400
1200
I
F
1000
[A]
800
600
400
T
VJ
= 125°C
T
VJ
= 25°C
[W]
400
200
0
0
200
400
600
200
800
0
25
50
75
100
125
150
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
I
FAVM
[A]
T
A
[°C]
V
F
[V]
Fig. 5 Forward current
I
F
versus V
F
Fig. 4 Power dissipation vs. forward current and ambient temperature
3200
2800
2400
R
L
R
thKA
K/W
P
tot
[W]
2000
1600
1200
800
400
0
0
300
600
900
1200
0
25
50
75
100
Circuit
B2
4xMDO500
0.015
0.03
0.04
0.05
0.07
0.01
0.14
125
150
I
dAVM
[A]
T
A
[°C]
Fig. 6 Single phase rectifier bridge: Power dissipation vs. direct output current
and ambient temperature. R = resistive load, L = inductive load
IXYS reserves the right to change limits, conditions and dimensions.
Data according to IEC 60747and per semiconductor unless otherwise specified
20191204c
© 2019 IXYS all rights reserved
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