PRELIMINARY
MX27C1610
16M-BIT [2M x 8/1M x 16] CMOS OTP ROM
FEATURES
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•
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•
•
2M x 8 or 1M x 16 organization
5V Vcc for Read operation
10V Vpp Programming operation
Fast access time: 100/120 ns
Totally static operation
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•
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Completely TTL compatible
Operating current: 60mA
Standby current: 100uA
Package type:
- 42 pin plastic DIP
GENERAL DESCRIPTION
The MX27C1610 is a 16M-bit, One Time Programmable
Read Only Memory. It is organized as 2M x 8 or 1M x
16 and has a static standby mode, and features fast
programming. For programming outside from the sys-
tem, existing EPROM programmers may be used. The
MX27C1610 supports a intelligent fast programming al-
gorithm which can result in programming time of less
than two minutes.
This One Time Programmable Read Only Memory is
packaged in industry standard 42 pin dual-in-line plas-
tic package.
PIN CONFIGURATIONS
PDIP
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
GND
OE
Q0
Q8
Q1
Q9
Q2
Q10
Q3
Q11
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
A19
A8
A9
A10
A11
A12
A13
A14
A15
A16
BYTE/VPP
GND
Q15/A-1
Q7
Q14
Q6
Q13
Q5
Q12
Q4
VCC
PIN DESCRIPTION
SYMBOL
A0~A19
Q0~Q14
CE
OE
BYTE/VPP
Q15/A-1
VCC
GND
PIN NAME
Address Input
Data Input/Output
Chip Enable Input
Output Enable Input
Word/Byte Selection
/Program Supply Voltage
Q15(Word mode)/LSB addr. (Byte
mode)
Power Supply Pin (+5V)
Ground Pin
MX27C1610
BLOCK DIAGRAM
CE
OE
BYTE/VPP
CONTROL
LOGIC
OUTPUT
BUFFERS
Q0~Q14
Q15/A-1
A0~A19
ADDRESS
INPUTS
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.
.
.
Y-DECODER
X-DECODER
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Y-DECODER
16M BIT
CELL
MAXTRIX
VCC
VSS
P/N:PM0593
REV. 1.4, NOV. 19, 2002
1
MX27C1610
TRUTH TABLE OF BYTE FUNCTION
BYTE MODE(BYTE = GND)
CE
H
L
L
OE
X
H
L
Q15/A-1
X
X
A-1 input
MODE
Non selected
Non selected
Selected
Q0-Q7
High Z
High Z
DOUT
SUPPLY CURRENT
Standby(ICC2)
Operating(ICC1)
Operating(ICC1)
WORD MODE(BYTE = VCC)
CE
H
L
L
OE
X
H
L
Q15/A-1
High Z
High Z
DOUT
MODE
Non selected
Non selected
Selected
Q0-Q7
High Z
High Z
DOUT
SUPPLY CURRENT
Standby(ICC2)
Operating(ICC1)
Operating(ICC1)
NOTE : X = H or L
FUNCTIONAL DESCRIPTION
READ MODE
The MX27C1610 has two control functions, both of which
must be logically satisfied in order to obtain data at the
outputs. Chip Enable (CE) is the power control and
should be used for device selection. Output Enable (OE)
is the output control and should be used to gate data to
the output pins, independent of device selection. As-
suming that addresses are stable, address access time
(tACC) is equal to the delay from CE to output (tCE).
Data is available at the outputs tOE after the falling edge
of OE's, assuming that CE has been LOW and ad-
dresses have been stable for at least tACC - t OE.
WORD-WIDE MODE
With BYTE/VPP at VCC ± 0.2V outputs Q0-7 present
data Q0-7 and outputs Q8-15 present data Q8-15, after
CE and OE are appropriately enabled.
BYTE-WIDE MODE
With BYTE/VPP at GND ± 0.2V, outputs Q8-15 are tri-
stated. If Q15/A-1 = VIH, outputs Q0-7 present data
bits Q8-15. If Q15/A-1 = VIL, outputs Q0-7 present data
bits Q0-7.
STANDBY MODE
The MX27C1610 has a CMOS standby mode which re-
duces the maximum VCC current to 100 uA. It is placed
in CMOS standby when CE is at VCC
±
0.2V. The
MX27C1610 also has a TTL-standby mode which re-
duces the maximum VCC current to 4 mA. It is placed
in TTL-standby when CE is at VIH. When in standby
mode, the outputs are in a high-impedance state, inde-
pendent of the OE input.
TWO-LINE OUTPUT CONTROL FUNCTION
To accommodate multiple memory connections, a two-
line control function is provided to allow for:
1. Low memory power dissipation,
2. Assurance that output bus contention will not occur.
It is recommended that CE be decoded and used as
the primary device-selecting function, while OE be made
a common connection to all devices in the array and
connected to the READ line from the system control
bus. This assures that all deselected memory devices
are in their low-power standby mode and that the out-
put pins are only active when data is desired from a
particular memory device.
P/N:PM0593
REV. 1.4, NOV. 19, 2002
2
MX27C1610
SYSTEM CONSIDERATIONS
During the switch between active and standby condi-
tions, transient current peaks are produced on the ris-
ing and falling edges of Chip Enable. The magnitude of
these transient current peaks is dependent on the out-
put capacitance loading of the device. At a minimum, a
0.1 uF ceramic capacitor (high frequency, low inherent
inductance) should be used on each device between
Vcc and GND to minimize transient effects. In addition,
to overcome the voltage drop caused by the inductive
effects of the printed circuit board traces on One Time
Programmable Read Only Memory arrays, a 4.7 uF
bulk electrolytic capacitor should be used between VCC
and GND for each eight devices. The location of the
capacitor should be close to where the power supply is
connected to the array.
WRITE OPERATIONS
Commands are written to the COMMAND INTERFACE
REGISTER (CIR) using standard microprocessor write
timings. The CIR serves as the interface between the
microprocessor and the internal chip operation. The
CIR can decipher Read Array, Read Silicon ID and Pro-
gram command. In the event of a read command, the
CIR simply points the read path at either the array or
the silicon ID, depending on the specific read command
given. For a program cycle, the CIR informs the write
state machine, and the write state machine and the write
state machine will control the program sequences and
the CIR will only respond to status reads. After the
write state machine has completed its task, it will allow
the CIR to respond to its full command set. The CIR
stays at read status register mode until the microproc-
essor issues another valid command sequence.
Device operations are selected by writing commands
into the CIR. See command definition table below.
MODE SELECT TABLE
BYTE/
MODE
Read (Word) (2)
Read (Upper Byte) (2)
Read (Lower Byte) (2)
Output Disable (2)
Standby (2)
Write Operation (2)
ManufacturerID(3)(1)
Device ID(3)(1)
CE
VIL
VIL
VIL
VIL
VIH
VIL
VIL
VIL
OE
VIL
VIL
VIL
VIH
X
VIH
VIL
VIL
A9
X
X
X
X
X
X
VH
VH
A0
X
X
X
X
X
X
VIL
VIH
Q15/A-1
Q15 Out
VIH
VIL
High Z
High Z
Q15 In
0B
0B
VPP(5)
VIH
VIL
VIL
X
X
VPP
VIH
VIH
Q8-14
Q8-14 Out
High Z
High Z
High Z
High Z
Q8-14 In
00H
00H
Q0-7
Q0-7 Out
Q8-15 Out
Q0-7 Out
High Z
High Z
Q0-7 In
C2H
6AH
NOTES:
1. VH = 10V ± 0.5V
2. X Either VIL or VIH.
3. A1= VIL, other address lines not specified are at "X" states
4. See DC Programming Characteristics for VPP voltages.
5. BYTE/VPP is intended for operation under DC Voltage conditions only. VPP=10V± 0.5V for write operation
P/N:PM0593
REV. 1.4, NOV. 19, 2002
3
MX27C1610
COMMAND DEFINITIONS OF WRITE OPERATION TABLE
Command
Sequence
Bus Write
Cycles Req'd
First Bus
Write Cycle
Second Bus
Write Cycle
Third Bus
Write Cycle
Addr
Data
Addr
Data
Addr
Data
Read/
Reset
4
Silicon
ID Read
4
Page/Byte
Program
4
Read
Status Reg.
4
Clear
Status Reg.
3
5555H
AAH
2AAAH
55H
5555H
F0H
RA
RD
5555H
AAH
2AAAH
55H
5555H
90H
00H/01H
C2H/6AH
5555H
AAH
2AAAH
55H
5555H
A0H
PA
PD
5555H
AAH
2AAAH
55H
5555H
70H
X
SRD
5555H
AAH
2AAAH
55H
5555H
50H
Fourth Bus
Addr
Read/Write Cycle Data
NOTES:
1. In the write operation mode, BYTE/VPP should be set to 10V±0.5V.
2. 5555H and 2AAAH address command codes stand for Hex number starting from A0 to A14.
3. RA=Address of the memory location to be read.
RD=Data read from location RA during read operation.
PA=Address of the memory location to be programmed.
PO=Data to be programmed at location PA.
DEVICE OPERATION
SILICON ID READ
The Silicon ID Read mode allows the reading out of a
binary code from the device and will identify its manu-
facturer and type. This mode is intended for use by
programming equipment for the purpose of automati-
cally matching the device to be programmed with its
corresponding programming algorithm. This mode is
functional over the entire temperature range of the de-
vice.
To activate this mode, the programming equipment must
force VID (10V±o.5V) on address pin A9. Two identifier
bytes may then be sequenced from the device outputs
by toggling address A0 from VIL to VIH. All addresses
are don't cares except A0 and A1.
The manufacturer and device codes may also be read
via the command register, for instances when the
MX27C1610 is programmed in a system without access
to high voltage on the A9 pin.
MX27C1610 Silion ID Codes
Type
Manufacturer Code**
Device Code**
A
19
X
X
A
18
A
17
X
X
X
X
A
16
X
X
A
1
VIL
VIL
A
0
Code(HEX) DQ
7
DQ
6
VIL
VIH
C2H*
6AH*
1
0
1
1
DQ
5
DQ
4
DQ
3
DQ
2
0
1
0
0
0
1
0
0
DQ
1
DQ
0
1
1
0
0
* The high byte of the code will be 00H and low byte of the code will be C2H for Manufacturer code and 6AH of Device code.
** All other address lines not specified are also at "X" state. X=VIH or VIL.
P/N:PM0593
REV. 1.4, NOV. 19, 2002
4
MX27C1610
READ/RESET COMMAND
The read or reset operation is initiated by writing the
read/reset command sequence into the command reg-
ister. Microprocessor read cycles retrieve array data
from the memory. The device remains enabled for reads
until the CIR contents are altered by a valid command
sequence.
The device will automatically power-up in the read/re-
set state. In this case, a command sequence is not
required to read data. Standard microprocessor read
cycles will retrieve array data. This default value en-
sures that no spurious alteration of the memory content
occurs during the power transition. Refer to the AC Read
Characteristics and Waveforms for the specific timing
parameters.
The MX27C1610 is accessed when CE and OE are low
the data stored at the memory location determined by
the address pins is asserted on the outputs. The out-
puts are put in the high impedance state whenever CE
or OE is high. This dual line control gives designers
flexibility in preventing bus contention.
Note that the read/reset command is not valid when pro-
gram is in progress.
WORD-WIDE LOAD
Word loads are used to enter the 128 bytes(64 words)
of a page to be programmed or the software codes for
data protection. A word load is performed by applying a
low pulse on the CE input with CE and OE high. The
address is latched on the falling edge of CE. The data is
latched by the rising edge of CE.
PROGRAM
The device is programmed on a page basis. Once the
bytes of a page are loaded into the device, they are
simultaneously programmed during the internal pro-
gramming period. After the first data word has been
loaded into the device, successive words are entered in
the same manner. The time between word loads must
be less than 30us otherwise the load period could be
teminated. A6 to A19 specify the page address, i.e.,
the device is page-aligned on 128 bytes(64
words)boundary. The page address must be valid dur-
ing each high to low transition of CE. A0 to A5 specify
the word address withih the page. The word may be
loaded in any order; sequential loading is not required.
If a high to low transition of CE is not detected whithin
100us of the last low to high transition, the load period
will end and the internal programming period will start.
The Auto page program terminates when status on Q7
is "1" at which time the device stays at read status reg-
ister mode until the CIR contents are altered by a valid
command sequence.
PAGE PROGRAM
The device is set up in the programming mode when
the programming Voltage Vpp=10V is applied with
Vcc=5V, and OE=VIH.
Any attempt to write to the device without the three-
cycle command sequence will not start the internal Write
State Machine(WSM), no data will be written to the de-
vice.
After three-cycle command (see command table) se-
quence is given, a word load is performed by applying a
low pulse on the CE input with CE low and OE high.
The address is latched on the falling edge of CE The
data is latched by the rising edge of CE . Maximum of
128 bytes of data may be loaded into each page by the
same procedure as outlined in the page program sec-
tion below.
P/N:PM0593
REV. 1.4, NOV. 19, 2002
5
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