®
April 2005
Preliminary
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LVS2100N N-Channel PowerJFET
®
Product Summary
Typical
V
DS
R
DS(ON)
@ 0 V
GS
11.5
Features
Max
24
14
V
mΩ
•
Device is fully on @ V
GS
= 0V.
•
Bidirectional blocking when off (no body diode)
Applications
•
Notebook battery switch:
Each JFET replaces 2 P-Channel series MOSFETs
Pinouts
SO-8
Absolute Maximum Ratings
Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional
operation under these conditions is not implied.
Symbol
V
DSS
V
GS
V
DG
I
D
T
J
T
STG
P
D
Parameter
Drain to Source voltage
Gate to Source voltage
Drain to Gate voltage
Drain Current
Junction Temperature
Storage Temperature
Lead Soldering Temperature
Power Dissipation
Conditions
Rating
24
–12
–28
11
50
–55 to 150
–65 to 150
260
2.5
1.3
Units
V
V
V
A
A
°C
°C
°C
W
W
Continuous, T
C
= 25°C
Pulsed, 300µS
10 seconds, 1.6mm from case
T
A
= 25°C, Note 1
T
A
= 25°C, Note 2
Thermal Resistance
Symbol
R
θ
JA
R
θ
JC
Resistance from:
Junction to Ambient
Junction to Case
Conditions
Note 1
Note 2
Rating
50
96
25
Units
°C/W
°C/W
°C/W
Note 1. Mounted on 1 in.
2
, 2 oz copper on FR-4
Note 1. Mounted on 0.05 in.
2
, 0.5 oz. copper on FR-4
©2005
Lovoltech Inc.
REV. 0.8.0 04/14/05
®
LVS2100N
Preliminary
Electrical Specifications
Symbol
Static
BV
DSX
BV
GDO
BV
GSO
R
DS(ON)
V
GS(OFF)
@T
J
= 25°C (unless otherwise specified)
Conditions
I
D
= 0.5 mA, V
GS
= –4 V
I
G
= –50µA
I
G
= –50µA
V
GS
= 0V, I
D
= –7A
V
GS
= 0V, I
D
= 7A
V
DS
= 16 V, I
D
= 250µA
∆V
GS
= 5V, V
DS
= 15V
∆V
DS
= 12V
Parameter
Breakdown Voltage Drain to Source
Breakdown Voltage Gate to Drain
Breakdown Voltage Gate to Source
Drain to Source On Resistance
Gate Threshold Voltage
Total Gate Charge
Gate to Drain charge
Gate to Source Charge
Gate resistance
Turn-on Delay
Turn-off Delay
Rise Time
Fall Time
Input Capacitance
Output Capacitance
Gate-Source Capacitance
Gate-Drain Capacitance
Drain-Source Capacitance
Min
24
Typ
28
–32
–14
11.5
13
–2.5
9.3
6.1
3.2
3
4
9
2
7
860
350
588
272
15
Max
Units
V
V
V
mΩ
mΩ
V
nC
nC
nC
Ω
nS
–28
–12
14
17
Dynamic
Q
G
Q
GD
Q
GS
R
G
T
D(ON)
T
D(OFF)
T
R
T
F
C
ISS
C
OSS
C
GS
C
GD
C
DS
I
D
=15A
Circuit of Figure 1
pF
pF
pF
pF
pF
15V
I
D
R
L
5V
2.2Ω
D.U.T.
G
D
S
Figure 1. Switching test circuit.
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2
®
LVS2100N
Preliminary
Typical Characteristics
15
@T
J
= 25°C (unless otherwise specified)
1.3
14
Normalized R
DS(ON)
-10
-5
0
5
10
1.2
R
DS (ON)
13
12
1.1
11
10
1
0
20
40
60
80
100
120
140
160
I
D
(A)
Die temperature (T
J
) °C
Figure 2. R
DS(ON)
vs. Drain Current @V
GS
= 0V
Figure 3. Normalized R
DS(ON)
vs. junction temperature
@ I
D
= –7A
4.5
4.0
3.5
Normalized R
DS(ON)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-0.8
-0.6
-0.4
-0.2
0
0.2
0.4
0.6
V
GS
Figure 4. Normalized R
DS(ON)
vs. @ I
D
= –7A
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3
®
LVS2100N
Preliminary
Dimensional Outline Drawing
SO-8
Dim
A
A1
B
C
D
E
e
H
h
L
q
8-lead narrow SOIC
Millimeters
Min
Max
1.35
1.75
0.10
0.20
0.35
0.51
0.19
0.25
4.80
5.00
3.80
4.00
1.27 BSC
5.80
6.20
0.25
0.50
0.50
0.93
0°
8°
Inches
Min
Max
0.0530
0.0690
0.0040
0.0080
0.0140
0.0200
0.0075
0.0100
0.1890
0.1960
0.1500
0.1570
0.050 BSC
0.2280
0.2440
0.0100
0.0200
0.0200
0.0370
0°
8°
8
7
6
5
E
H
Recommended minimum pad layout
dimensions in inches (mm)
1
2
3
4
h x 45°
C
0.25 mm (Gage Plane)
0.101 mm
0.004"
L
q
Conforms to JEDEC part number MS-012
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4
®
LVS2100N
Preliminary
Ordering Information
Part Number
LVS2001N
Package
SO-8
Packing
13” Tape and Reel, 2500 units / reel
LIFE SUPPORT POLICY
LOVOLTECH’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE
SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE
PRESIDENT OF LOVOLTECH SEMICONDUCTOR CORPORATION. As used herein:
1.
Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the
body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance
instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the
user.
A critical component in any component of a life support, device or system whose failure to perform can be
reasonably expected to cause the failure of the life support device or system, or to affect its safety or
effectiveness.
2.
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