LTC4352C ................................................ 0°C to 70°C
LTC4352I.............................................. –40°C to 85°C
Storage Temperature Range................... –65°C to 150°C
Lead Temperature (Soldering, 10 sec)
MS Package ...................................................... 300°C
PIN CONFIGURATION
TOP VIEW
V
IN
V
CC
UV
OV
STATUS
FAULT
1
2
3
4
5
6
13
12 SOURCE
11 GATE
10 CPO
9 GND
8 OUT
7 REV
V
IN
V
CC
UV
OV
STATUS
FAULT
1
2
3
4
5
6
TOP VIEW
12
11
10
9
8
7
SOURCE
GATE
CPO
GND
OUT
REV
DD PACKAGE
12-PIN (3mm
×
3mm) PLASTIC DFN
T
JMAX
= 125°C,
θ
JA
= 43°C/W
EXPOSED PAD (PIN 13) PCB GND CONNECTION OPTIONAL
MS PACKAGE
12-LEAD PLASTIC MSOP
T
JMAX
= 125°C,
θ
JA
= 164°C/W
ORDER INFORMATION
LEAD FREE FINISH
LTC4352CDD#PBF
LTC4352IDD#PBF
LTC4352CMS#PBF
LTC4352IMS#PBF
TAPE AND REEL
LTC4352CDD#TRPBF
LTC4352IDD#TRPBF
LTC4352CMS#TRPBF
LTC4352IMS#TRPBF
PART MARKING*
LDPJ
LDPJ
4352
4352
PACKAGE DESCRIPTION
12-Pin (3mm
×
3mm) Plastic DFN
12-Pin (3mm
×
3mm) Plastic DFN
12-Lead Plastic MSOP
12-Lead Plastic MSOP
TEMPERATURE RANGE
0°C to 70°C
–40°C to 85°C
0°C to 70°C
–40°C to 85°C
Consult LTC Marketing for parts specified with wider operating temperature ranges. *The temperature grade is identified by a label on the shipping container.
Consult LTC Marketing for information on non-standard lead based finish parts.
For more information on lead free part marking, go to:
http://www.linear.com/leadfree/
For more information on tape and reel specifications, go to:
http://www.linear.com/tapeandreel/
4352f
2
LTC4352
ELECTRICAL CHARACTERISTICS
SYMBOL
Supplies
V
IN
Input Operating Range
With External 2.9V to 4.7V V
CC
Supply
With External 4.7V to 6V V
CC
Supply
V
CC(EXT)
V
CC(INT)
I
IN
I
CC
V
CC(UVLO)
ΔV
CC(HYST)
Ideal Diode Control
V
FWD(REG)
ΔV
GATE
t
ON(GATE)
t
OFF(GATE)
Input/Output Pins
V
UV,OV(TH)
ΔV
UV,OV(HYST)
V
REV(TH)
I
UV,OV
I
REV
I
OUT
I
SOURCE
I
CPO(UP)
I
GATE
UV, OV Threshold Voltage
UV, OV Threshold Hysteresis
REV Threshold Voltage
UV, OV Current
REV Current
OUT Current
SOURCE Current
CPO Pull-Up Current
GATE Fast Pull-Up Current
GATE Fast Pull-Down Current
GATE Off Pull-Down Current
STATUS, FAULT
Leakage Current
STATUS, FAULT
Pull-Up Current
STATUS, FAULT
Output Low Voltage
STATUS, FAULT
Output High Voltage
MOSFET On Detect Threshold
Open MOSFET Threshold (V
IN
– V
OUT
)
V = 0.5V
V
REV
= 1V
V
OUT
= 0V, 12V
V
SOURCE
= 0V
V
CPO
= V
IN
= 2.9V
V
CPO
= V
IN
= 18V
V
FWD
= 0.2V, ΔV
GATE
= 0V, V
CPO
= 17V
V
FWD
= –0.2V, ΔV
GATE
= 5V
V
UV
= 0V, ΔV
GATE
= 2.5V
V = 18V
V = 0V
I = 1.25mA
I = –1μA
STATUS
Pulls Low, V
FWD
= 50mV
FAULT
Pulls Low
V
UV
Falling, V
OV
Rising
l
l
l
l
l
l
l
l
l
l
l
l
l
l
l
l
l
l
l
The
l
denotes the specifications which apply over the full operating
temperature range, otherwise specifications are at T
A
= 25°C. V
IN
= 12V, V
SOURCE
= V
IN
, V
OUT
= V
IN
, V
CC
Open, unless otherwise noted.
PARAMETER
CONDITIONS
MIN
2.9
0
0
2.9
3.5
4.1
1.4
–10
1.25
2.45
50
10
5
2.57
70
25
6.1
0.25
0.2
490
2.5
0.8
7
–13
–85
–60
–50
–90
–75
–1.5
1.5
100
0
–8
–10
0.2
V
CC
– 1 V
CC
– 0.5
0.3
200
0.7
250
1.1
300
500
5
1.0
0
10
TYP
MAX
18
V
CC
18
6
4.7
3
–13
2.5
2.7
90
40
7.5
0.5
0.5
510
8.5
1.2
±1
13
200
–130
–115
–100
UNITS
V
V
V
V
V
mA
μA
mA
V
mV
mV
V
μs
μs
mV
mV
V
μA
μA
μA
μA
μA
μA
A
A
μA
μA
μA
V
V
V
mV
V
CC
External Supply Range
V
CC
Internal Regulator Voltage
V
IN
Supply Current
V
IN
= 0V, V
CC
= 5V, V
OUT
= 18V
External V
CC
Supply Current
V
CC
Undervoltage Lockout Threshold
V
CC
Undervoltage Lockout Hysteresis
Forward Regulation Voltage (V
IN
− V
OUT
)
MOSFET Gate Drive (V
GATE
– V
SOURCE
)
GATE Turn-On Delay
GATE Turn-Off Delay
V
FWD
= 0.1V, I = 0 and –1μA
C
GATE
= 10nF, V
FWD
= 0.2V
C
GATE
= 10nF, V
FWD
= −0.2V
V
CC
= 5V, V
IN
= 0V
V
CC
Rising
l
l
l
l
l
l
l
l
l
l
l
60
145
±1
–12
0.4
I
FLT,STAT(IN)
I
FLT,STAT(UP)
V
OL
V
OH
ΔV
GATE(ST)
V
FWD(FLT)
Note 1:
Stresses beyond those listed under Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to any Absolute
Maximum Rating for extended periods may affect device reliability and
lifetime.
Note 2:
All currents into device pins are positive; all currents out of device
pins are negative. All voltages are referenced to GND unless otherwise
specified.
Note 3:
Internal clamps limit the GATE and CPO pins to a minimum of 5V
above, and a diode below SOURCE. Driving these pins to voltages beyond
the clamp may damage the device.
4352f
3
LTC4352
TYPICAL PERFORMANCE CHARACTERISTICS
V
CC
Open, unless otherwise noted.
V
IN
Current vs Voltage
1.6
300
250
1.2
I
IN
(mA)
200
1.00
0.8
I
IN
(μA)
150
100
50
0
0
–50
0
3
6
9
V
IN
(V)
12
15
18
4352 G01
T
A
= 25°C, V
IN
= 12V, V
SOURCE
= V
IN
, V
OUT
= V
IN
,
V
IN
Current vs Voltage with
External V
CC
V
CC
= 5V
1.50
1.25
V
CC
Current vs Voltage
V
IN
= 0V
I
CC
(mA)
0
1
2
V
IN
(V)
3
4
5
4352 G02
0.75
0.50
0.25
0
0.4
0
1
2
3
V
CC
(V)
4
5
6
4352 G03
OUT Current vs Voltage
300
250
V
CPO
–V
SOURCE
(V)
200
I
OUT
(μA)
150
100
50
0
–50
7
6
5
4
CPO Voltage vs Current
7
V
IN
= 18V
V
GATE
–V
SOURCE
(V)
6
GATE Voltage vs Current
V
OUT
= V
IN
– 0.1V
V
IN
= 18V
5
4
V
IN
= 2.9V
3
2
1
0
V
IN
= 2.9V
3
2
1
0
0
3
6
9
V
OUT
(V)
12
15
18
4352 G04
–1
0
–20
–40
–60
–80
I
CPO
(μA)
–100
–120
–1
0
–20
–40
4352 G05
–60
–80
I
GATE
(μA)
–100
–120
4352 G06
STATUS, FAULT
Output Low
Voltage vs Current
1
4.0
3.5
0.8
3.0
2.5
V
OH
(V)
2.0
1.5
1.0
0.2
0.5
0
0
0
1
2
3
CURRENT (mA)
4
5
4352 G07
STATUS, FAULT
Output High
Voltage vs Current
V
OL
(V)
0.6
0.4
0
–2
–4
–6
–8
CURRENT (μA)
–10
–12
4352 G08
4352f
4
LTC4352
PIN FUNCTIONS
V
IN
(Pin 1):
Voltage Sense and Supply Input. Connect this
pin to the power input side of the MOSFET. The low voltage
supply V
CC
is generated from V
IN
. The voltage sensed at
this pin is used to control the MOSFET gate.
V
CC
(Pin 2):
Low Voltage Supply. Connect a 0.1μF capacitor
from this pin to ground. When V
IN
≥ 2.9V, this pin provides
decoupling for an internal regulator that generates a 4.1V
supply. For applications where V
IN
< 2.9V, connect an ex-
ternal supply voltage in the range 2.9V to 6V to this pin.
UV (Pin 3):
Undervoltage Comparator Input. Connect this
pin to an external resistive divider from V
IN
. If the volt-
age at this pin falls below 0.5V, an undervoltage fault is
detected and the MOSFET is turned off. The comparator
has a built-in hysteresis of 5mV. Tie to V
CC
if unused.
OV (Pin 4):
Overvoltage Comparator Input. Connect this
pin to an external resistive divider from V
IN
. If the volt-
age at this pin rises above 0.5V, an overvoltage fault is
detected and the MOSFET is turned off. The comparator
has a built-in hysteresis of 5mV. Tie to GND if unused.
STATUS
(Pin 5):
MOSFET Status Output. This pin is pulled
low by an open-drain output when the external MOSFET
is on. An internal 10μA current source pulls this pin up to
a diode below V
CC
. It may be pulled above V
CC
using an
external pull-up. Tie to GND or leave open if unused.
FAULT
(Pin 6):
Fault Output. This pin is pulled low by an
open-drain output when a fault occurs. This fault could
either be an undervoltage fault, an overvoltage fault, or
an open MOSFET fault. An internal 10μA current source
pulls this pin up to a diode below V
CC
. It may be pulled
above V
CC
using an external pull-up. Tie to GND or leave
open if unused.
REV (Pin 7):
Reverse Current Enable Input. Connect
this pin to GND for normal diode operation that blocks
reverse current. Driving this pin above 1V fully turns on
the MOSFET gate to allow reverse current. An internal
10μA current source pulls this pin to GND.
OUT (Pin 8):
Output Voltage Sense Input. Connect this pin
to the output side of the MOSFET. The voltage sensed at
this pin is used to control the MOSFET gate.
GND (Pin 9):
Device Ground.
CPO (Pin 10):
Charge Pump Output. Connect a capacitor
from this pin to the SOURCE pin. The value of this capaci-
tor is approximately 10x the gate capacitance (C
ISS
) of the
MOSFET switch. The charge stored on this capacitor is
used to pull-up the gate during a fast turn-on. Leave this
pin open if fast turn-on is not needed.
GATE (Pin 11):
MOSFET Gate Drive Output. Connect this
pin to the gate of the external N-channel MOSFET switch.
An internal clamp limits the gate voltage to 6.1V above,
and a diode below SOURCE. During fast turn-on a 1.5A
pull-up charges GATE to CPO. During fast turn-off a 1.5A
pull-down discharges GATE to SOURCE.
SOURCE (Pin 12):
MOSFET Gate Drive Return. Connect
this pin to the source of the external N-channel MOSFET
与云数据库相比，小型计算机是专门为网络边缘的去中心化坚固计算而构建的。通过将应用程序、分析和处理服务移动到更靠近数据生成源的位置，业务运营可以获得改进的实时计算应用程序性能。 l 从奔腾到酷睿i5的可扩展CPU性能 l 智能电源点火管理和CAN总线网络支持 l 无线局域网和广域网LTE连接 l 丰富的I/O可扩展性，包括PoE、PCI、PCIe、COM l 适用于宽工作温度和宽电压输入的坚固...[详细]
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
