AP30G120BSW-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
Features
▼
High Speed Switching
▼
Low Saturation Voltage
V
CE(sat)
=2.9V@I
C
=30A
▼
CO-PAK, IGBT With FRD
▼
RoHS Compliant & Halogen-Free
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR WITH FRD.
V
CES
I
C
C
G
C
E
TO-3P
G
E
Parameter
Rating
1200
+30
60
30
1
1200V
30A
Absolute Maximum Ratings
Symbol
V
CES
V
GE
I
C
@T
C
=25℃
I
C
@T
C
=100℃
I
CM
I
F
@T
C
=25℃
I
FM
P
D
@T
C
=25℃
T
STG
T
J
T
L
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Diode Forward Current
Diode Pulse Forward Current
Maximum Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Lead Temp. for Soldering Purposes
, 1/8" from case for 5 seconds .
Collector-Emitter Voltage
Units
V
V
A
A
A
A
A
W
℃
℃
℃
120
8
40
208
-55 to 150
-55 to 150
300
Notes:
1.Pulse width limited by max . junction temperature .
Thermal Data
Symbol
Rthj-c(IGBT)
Rthj-a
Parameter
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Value
0.6
5
40
Units
℃/W
℃/W
℃/W
Rthj-c(Diode) Thermal Resistance Junction-Case
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
I
GES
I
CES
V
CE(sat)
V
GE(th)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oes
C
res
V
F
t
rr
Q
rr
Parameter
Gate-to-Emitter Leakage Current
Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate Threshold Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GE
=0V
V
CE
=30V
f=1.0MHz
I
F
=8A
I
F
=8A
di/dt = 100 A/µs
Test Conditions
V
GE
=+30V, V
CE
=0V
V
CE
=1200V, V
GE
=0V
V
GE
=15V, I
C
=30A
V
GE
=15V, I
C
=60A
V
CE
=V
GE
, I
C
=250uA
I
C
=30A
V
CC
=500V
V
GE
=15V
V
CC
=600V,
I
c
=30A,
V
GE
=15V,
R
G
=5Ω,
Inductive Load
Min.
-
-
-
-
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
2.7
3.7
-
63
12
32
40
45
125
430
1.3
3.1
1400
120
15
2.5
70
170
Max. Units
+500 nA
1
3.4
-
7
100
-
-
-
-
-
860
-
-
2240
-
-
3.2
-
-
mA
V
V
V
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
pF
pF
pF
V
ns
nC
1
201107251
Electrical Characteristics of Diode@T
j
=25℃(unless otherwise specified)
Data and specifications subject to change without notice
AP30G120BSW-HF
160
120
T
C
=25 C
I
C
, Collector Current (A)
120
o
20V
18V
15V
I
C
, Collector Current (A)
100
T
C
=150 C
o
20V
18V
15V
80
12V
60
80
12V
40
V
GE
=10V
40
V
GE
=10V
20
0
0
4
8
12
16
20
0
0
4
8
12
16
V
CE
, Collector-Emitter Voltage (V)
V
CE
, Collector-Emitter Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
120
6
V
GE
=15V
100
V
GE
= 15 V
V
CE(sat) ,
Saturation Voltage(V)
5
I
C ,
Collector Current(A)
80
T
C
=25
℃
60
I
C
= 60 A
4
T
C
=150
℃
I
C
=30A
3
40
2
20
0
0
2
4
6
8
10
1
0
40
80
120
160
V
CE
, Collector-Emitter Voltage (V)
Junction Temperature (
o
C)
Fig 3. Typical Saturation Voltage
Characteristics
2
2400
Fig 4. Typical Collector- Emitter Voltage
v.s. Junction Temperature
f=1.0MHz
I
C
=1mA
2000
1.6
Normalized V
GE(th)
(V)
Capacitance (pF)
1600
1.2
C
ies
1200
0.8
800
0.4
400
0
-50
0
50
100
150
0
1
5
9
13
17
21
25
29
C
oes
C
res
33
37
Junction Temperature ( C )
o
V
CE
, Collector-Emitter Voltage (V)
Fig 5. Gate Threshold Voltage
Fig 6. Typical Capacitance Characterisitics
v.s. Junction Temperature
2
AP30G120BSW-HF
1000
1
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
100
I
C
,Collctor Current(A)
0.2
10
10us
100us
0.1
0.1
0.05
1
P
DM
0.02
t
T
1ms
0.1
0.01
T
c
=25
o
C
Single Pulse
0.01
1
10
100
1000
Single Pulse
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
10ms
0.01
10000
0.00001
0.0001
0.001
0.01
0.1
1
10
V
CE
,Collector - Emitter Voltage(V)
t , Pulse Width (s)
Fig 7. SOA Characteristics
Fig 8. Effective Transient Thermal
Impedance
10
10
T
C
=25 C
V
CE
, Collector-Emitter Voltage(V)
V
CE
, Collector-Emitter Voltage(V)
8
8
o
T
C
=150 C
o
6
6
I
C
= 60 A
4
4
I
C
= 60 A
I
C
= 30 A
I
C
= 30 A
2
2
I
C
= 15 A
I
C
= 15 A
0
0
4
8
12
16
20
0
0
4
8
12
16
20
V
GE
, Gate-Emitter Voltage(V)
V
GE
, Gate-Emitter Voltage(V)
Fig 9. Saturation Voltage vs. V
GE
Fig 10. Saturation Voltage vs. V
GE
10
16
V
GE
, Gate -Emitter Voltage (V)
I
C
= 30 A
V
CC
=500V
12
I
F
, Forward Current (A)
T
j
=150
o
C
1
T
j
=25
o
C
8
4
0.1
0
0.8
1.6
2.4
3.2
0
0
20
40
60
80
V
F
, Forward Voltage (V)
Q
G
, Gate Charge (nC)
Fig11. Forward Characteristic of
Fig 12. Gate Charge Characterisitics
Diode
3
AP30G120BSW-HF
80
I
C
, Maximum DC Collector Current (A)
60
40
20
0
25
50
75
100
125
150
T
C
, Case Temperature ( C)
o
Fig 13. Maximum Collector Current VS.
Case Temperature
4
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