AP30G120ASW
RoHS-compliant Product
Advanced Power
Electronics Corp.
Features
▼
High Speed Switching
▼
Low Saturation Voltage
V
CE(sat)
=2.9V@I
C
=30A
▼
CO-PAK, IGBT With FRD
▼
RoHS Compliant
N-CHANNEL INSULATED GATE
BIPOLAR TRANSISTOR WITH FRD.
V
CES
I
C
C
G
C
E
TO-3P
G
E
Parameter
Rating
1200
+30
60
30
120
6
40
208
-55 to 150
-55 to 150
300
1200V
30A
Absolute Maximum Ratings
Symbol
V
CES
V
GE
I
C
@T
C
=25℃
I
C
@T
C
=100℃
I
CM
I
F
@T
C
=100℃
I
FM
P
D
@T
C
=25℃
T
STG
T
J
T
L
Gate-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
1
Units
V
V
A
A
A
A
A
W
℃
℃
℃
Collector-Emitter Voltage
Diode Continunous Forward Current
Diode Pulse Forward Current
Maximum Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Maximum Lead Temp. for Soldering Purposes
, 1/8" from case for 5 seconds .
Notes:
1.Pulse width limited by max . junction temperature .
Thermal Data
Symbol
Rthj-c(IGBT)
Rthj-a
Parameter
Thermal Resistance Junction-Case
Thermal Resistance Junction-Ambient
Value
0.6
2
40
Units
℃/W
℃/W
℃/W
Rthj-c(Diode) Thermal Resistance Junction-Case
Electrical Characteristics@T
j
=25
o
C(unless otherwise specified)
Symbol
I
GES
I
CES
V
CE(sat)
V
GE(th)
Q
g
Q
ge
Q
gc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
C
ies
C
oes
C
res
V
F
V
F
t
rr
Q
rr
Parameter
Gate-to-Emitter Leakage Current
Collector-Emitter Leakage Current
Collector-Emitter Saturation Voltage
Gate Threshold Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Forward Voltage
Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GE
=0V
V
CE
=30V
f=1.0MHz
I
F
=6A
I
F
=20A
I
F
=10A
di/dt = 100 A/µs
Test Conditions
V
GE
=+30V, V
CE
=0V
V
CE
=1200V, V
GE
=0V
V
GE
=15V, I
C
=30A
V
GE
=15V, I
C
=60A
V
CE
=V
GE
, I
C
=250uA
I
C
=30A
V
CC
=500V
V
GE
=15V
V
CC
=600V,
I
c
=30A,
V
GE
=15V,
R
G
=5Ω,
Inductive Load
Min.
-
-
-
-
3
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
2.9
3.7
-
63
12
32
40
45
125
430
1.3
3.1
1400
120
15
2.6
-
54
138
Max. Units
+500
nA
1
3.6
-
7
100
-
-
-
-
-
860
-
-
2240
-
-
3
4
-
-
mA
V
V
V
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
pF
pF
pF
V
V
ns
nC
Electrical Characteristics of Diode@T
j
=25℃(unless otherwise specified)
Data and specifications subject to change without notice
1
201107182
AP30G120ASW
160
120
T
C
=25 C
I
C
, Collector Current (A)
120
o
20V
18V
15V
I
C
, Collector Current (A)
100
T
C
=150 C
o
20V
18V
15V
80
12V
60
80
12V
40
V
GE
=10V
40
V
GE
=10V
20
0
0
4
8
12
16
20
0
0
4
8
12
16
V
CE
, Collector-Emitter Voltage (V)
V
CE
, Collector-Emitter Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
120
6
V
GE
=15V
100
V
GE
= 15 V
V
CE(sat) ,
Saturation Voltage(V)
5
I
C ,
Collector Current(A)
80
T
C
=25
℃
60
I
C
= 60 A
4
T
C
=150
℃
I
C
=30A
3
40
2
20
0
0
2
4
6
8
10
1
0
40
80
120
160
V
CE
, Collector-Emitter Voltage (V)
Junction Temperature (
o
C)
Fig 3. Typical Saturation Voltage
Characteristics
2
2400
Fig 4. Typical Collector- Emitter Voltage
v.s. Junction Temperature
f=1.0MHz
I
C
=1mA
2000
1.6
Normalized V
GE(th)
(V)
Capacitance (pF)
1600
1.2
C
ies
1200
0.8
800
0.4
400
0
-50
0
50
100
150
0
1
5
9
13
17
21
25
29
C
oes
C
res
33
37
Junction Temperature ( C )
o
V
CE
, Collector-Emitter Voltage (V)
Fig 5. Gate Threshold Voltage
Fig 6. Typical Capacitance Characterisitics
v.s. Junction Temperature
2
AP30G120ASW
1000
1
V
GE
=15V
T
C
=125
o
C
I
C
, Peak Collector Current(A)
100
Normalized Thermal Response (R
thjc
)
Duty factor=0.5
0.2
0.1
0.1
0.05
P
DM
0.02
10
t
T
0.01
Safe Operating Area
1
1
10
100
1000
10000
Single Pulse
Duty factor = t/T
Peak T
j
= P
DM
x R
thjc
+ T
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
V
CE ,
Collector-Emitter Voltage(V)
t , Pulse Width (s)
Fig 7. Turn-off SOA
Fig 8. Effective Transient Thermal
Impedance
10
10
T
C
=25 C
V
CE
, Collector-Emitter Voltage(V)
V
CE
, Collector-Emitter Voltage(V)
8
8
o
T
C
=150 C
o
6
6
I
C
= 60 A
4
4
I
C
= 60 A
I
C
= 30 A
I
C
= 30 A
2
2
I
C
= 15 A
I
C
= 15 A
0
0
4
8
12
16
20
0
0
4
8
12
16
20
V
GE
, Gate-Emitter Voltage(V)
V
GE
, Gate-Emitter Voltage(V)
Fig 9. Saturation Voltage vs. V
GE
Fig 10. Saturation Voltage vs. V
GE
100
16
V
GE
, Gate -Emitter Voltage (V)
I
C
= 30 A
V
CC
=500V
12
I
F
, Forward Current (A)
10
T
j
=150
o
C
T
j
=25
o
C
8
1
4
0.1
0
1
2
3
4
0
0
20
40
60
80
V
F
, Forward Voltage (V)
Q
G
, Gate Charge (nC)
Fig11. Forward Characteristic of
Fig 12. Gate Charge Characterisitics
Diode
3
AP30G120ASW
80
I
C
, Maximum DC Collector Current (A)
60
40
20
0
25
50
75
100
125
150
T
C
, Case Temperature (
℃
)
Fig 13. Maximum Collector Current VS.
Case Temperature
4
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