'jeis.eu
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Lproaucti
t
One.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MRF230
(SILICON)
The RF Line
1.5 W -90MHz
RF POWER
TRANSISTOR
NPN SILICON
NPN SILICON RF POWER TRANSISTORS
. . designed for 12.5 Volt, mid-band targe-signal amplifier appli-
cations in industrial and commercial FM equipment operating in the
40 to 100 MHz range.
• Specified 12.5 Volt, 90 MHz Characteristics -
Output Power = 1.5 Watts
Minimum Gain = 10 dB
Efficiency - 55%
• 100% Tested for Load Mismatch at all Phase Angles with
30:1 VSWR
• Characterized with Series Equivalent Large-Signal Impedance
Parameters
• Characterized with Parallel Equivalent Large-Signal Impedance
Parameters
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltege
Emitter-Base Volt*
Collector Current — Continuous
Total Device Dissipation S> T
c
- 25°C (II
Derate above 25°C
Storage Temperature Range
Tstg
Symbol
VCEO
VCBO
VEBO
5.0
28.6
Watts
STYLE 1
PIN 1 EMITTER
2. BASE
3-COLLECTOR
MILLIMETERS
MIN
MAX
8.89
9.40
8.51
8.00
610
680
0.406 O.S33
0.229
3.18
0.406 0.48T
4.83
5,33
0.711 I
0.884
1
_&!2i
1.02
K
12.7tP
_
L
6.35
4S°NOM
M
F
-
[ 1.27
0
WNOM
R
2.54
-
INCHES
MIN
MAX
0.350 D.370
0315
0.335
0.240 0260
0.01C 0.021
0.009
0.125
0016
J3!3-
0190
rb.210
0028 0.034
0.029 OJJ40
0.500
_
0,250
4S
D
I
1M
-
O.OSO
90° MOM
0.100 1 -
mW/°C
D
THERMAL CHARACTERISTICS
Character istic
Thermal Resistance, Junction to Case
Symbol
°c/w
(1) These devices are designed for RF operation. The total device dissipation rating applies
only when the devices are operated as Class C RF Amplifiers.
All JEOEC dimtnttoni ind rwtit ipply.
CASE 79 OZ
TO 39
NJ Setni-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice, Information furnished b> NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use
VI Semi-Conductors enanir.iges customers to verify that datasheets nre current before placing orders.
MR F230
(continued)
ELECTRICAL CHARACTERISTICS(T
C
= 2o°C
unless otherwise, noted)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
<l
c
-25mAdc. I
B
- 0 )
Collector-Emitter Breakdown Voltage
<I
C
- 25 mAdc, V
BE
- 0)
Emitter-Ban Breakdown Voltage
(Ig- 0.26 mAdc, l
c
- 0)
Collector Cutoff Current
IVca- 15 Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain
(1C = 250 mAdc, VCE - 5.0 Vdcl
DYNAMIC CHARACTERISTICS
Output Capacitance
(V
c
e - 12.5 Vdc, IE - 0, f - 1.0 MHz)
FUNCTIONAL TESTS {Figure 1)
Common-Emitter Amplifier Power Gain
IVcc" 12.5 Vdc, P
out
- 1.5W, f -90MHz)
Collector Efficiency
( V c c - 1 2 5 Vdc. P
ou
, - 1.5W,*»90MHz)
Load Mismatch
(V
CC
. 12.5 Vdc, P
ou
, - 1.5W,
f .90MHz.Tc<25°C)
G
PE
:
Symbol
ev
CEO
BVCES
BV
EBO
'CBO
18
36
4.0
—
-
—
—
0.5
Vdc
Vdc
Vdc
mAdc
"FE
5.0
-
-•
Cob
-
25
pP
to
55
-
—
as
%
n
'VSWR >30:1 Through All Phaie
Angles tn 3 Second Interval
After Which Devices Will Meet
GPE Test Limits
FIGURE 1 - 90 MHz TEST CIRCUIT SCHEMATIC
RF
V
Input >
^^ \
Q-Jf
C1
S.O.SOpF.
ARCO4I.2
C2.C6 2S-380 pf. ARCO 484
C3
2?OpFUNELCO
C4
lOpFUNELCO
C5
9.0 180 pp. AHCO 463
C7
1000 pF
UNELCO
C8
0.47
Mf ERIE
Oiic
C.r»mi<
C9
Ul
L2
L3
L4
L5
Rl
20 i«F. IS Vdo TANTALUM
2 Turn»,
m& MNG.
3/8" I.O. 3/8" U>n
8
2.6Turni,
#70
AWQ. on Ferrite Bead.
FERROXCUBE 56-5BQ-S5-3B
3 Turn,, W18 AWG. 3/8" I.D.. 1/2" Lena
0.68 0H, 9230-16 MILLER Molded Choke
Ferrita Bead, FERROXCUBE 56-590-95-36
4.7 OHM. 1/2 W, IDS Carbon
Input/Output
Connectors
-~
Type BNC
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