DSEI 2x 30
DSEI 2x 31
Fast Recovery
Epitaxial Diode (FRED)
I
FAVM
= 2x 28 A
V
RRM
= 1200 V
t
rr
= 40 ns
V
RSM
V
1200
V
RRM
V
1200
Type
miniBLOC, SOT-227 B
DSEI 2x 30-12B
DSEI 2x 31-12B
DSEI 2x 30
DSEI 2x 31
E72873
Symbol
I
FRMS
I
FAVM
①
I
FRM
I
FSM
Test Conditions
Maximum Ratings (per diode)
70
28
375
200
210
185
195
200
180
170
160
-40...+150
150
-40...+150
A
A
A
A
A
A
A
As
A
2
s
A
2
s
A
2
s
°C
°C
°C
W
V~
2
Features
●
T
VJ
= T
VJM
T
C
= 50°C; rectangular, d = 0.5
t
P
< 10
µs;
rep. rating, pulse width limited by T
VJM
T
VJ
= 45°C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
●
●
●
●
T
VJ
= 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
It
2
●
●
●
T
VJ
= 45°C
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
International standard package
miniBLOC (ISOTOP compatible)
Isolation voltage 2500 V~
2 independent FRED in 1 package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
T
VJ
= 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T
VJ
T
VJM
T
stg
P
tot
V
ISOL
M
d
Weight
Symbol
I
R
Test Conditions
T
VJ
= 25°C
T
VJ
= 25°C
T
VJ
= 125°C
I
F
= 30 A;
V
R
= V
RRM
V
R
= 0.8 • V
RRM
V
R
= 0.8 • V
RRM
T
VJ
= 150°C
T
VJ
= 25°C
T
C
= 25°C
50/60 Hz, RMS
I
ISOL
≤
1 mA
Mounting torque
Terminal connection torque (M4)
Applications
●
●
●
100
2500
1.5/13
1.5/13
30
●
●
Nm/lb.in.
Nm/lb.in.
g
●
●
●
Antiparallel diode for high frequency
switching devices
Anti saturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating and melting
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
Characteristic Values (per diode)
typ.
max.
0.75
0.25
7
2.2
2.55
1.65
18.2
1.25
0.05
mA
mA
mA
V
V
V
mΩ
K/W
K/W
ns
A
Advantages
●
●
V
F
V
T0
r
T
R
thJC
R
thCK
t
rr
I
RM
●
●
●
For power-loss calculations only
T
VJ
= T
VJM
High reliability circuit operation
Low voltage peaks for reduced
protection circuits
Low noise switching
Low losses
Operating at lower temperature or
space saving by reduced cooling
I
F
= 1 A; -di/dt = 100 A/µs; V
R
= 30 V; T
VJ
= 25°C
V
R
= 540 V; I
F
= 30 A; -di
F
/dt = 240 A/µs
L
≤
0.05
µH;
T
VJ
= 100°C
40
16
60
18
①
I
FAVM
rating includes reverse blocking losses at T
VJM
, V
R
= 0.8 V
RRM
, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions.
20170315a
© 2017 IXYS All rights reserved
1-3
DSEI 2x 30
DSEI 2x 31
70
60
50
6
5
4
T
VJ
= 25°C
100°C
150°C
T
VJ
= 100°C
V
R
= 540 V
50
T
VJ
= 100°C
V
R
= 540 V
40
I
F
= 30 A
60 A
30 A
15 A
max.
I
F
40
[A]
30
20
10
0
0
Q
rr
[ C]
3
2
I
F
= 30 A
60 A
30 A
15 A
I
RM
30
[A]
20
max.
typ.
1
0
1
2
3
4
1
10
100
10
typ.
0
1000
0
200
400
600
V
F
[V]
Fig. 1 Forward current
versus voltage drop
1.4
1.0
-di
F
/dt [A/ s]
Fig. 2 Recovery charge
versus -di
F
/dt
60
T
VJ
= 100°C
V
R
= 540 V
-di
F
/dt [A/ s]
Fig.3 Peak reverse current
versus di
F
/dt
1200
1.2
0.8
max.
I
F
= 30 A
60 A
30 A
15 A
50
40
1000
800
T
VJ
= 125°C
I
F
= 30 A
1.0
t
rr
0.6
V
FR
30
K
f
0.8
I
RM
t
fr
[ns]
400
[ s]
0.4
[V]
20
t
fr
0.6
Q
R
0.2
typ.
10
V
FR
200
0.4
0
40
80
120
160
0.0
0
200
400
600
0
0
200
400
0
600
T
J
[°C]
Fig. 4 Dynamic parameters vs.
junction temperature
-di
F
/dt [A/ s]
Fig. 5 Recovery time versus
versus -di
F
/dt
-di
F
/dt [A/ s]
Fig.6 Peak forward voltage
versus dt
F
/dt
1
Z
thJC
0.1
[K/W]
0.01
0.0001
0.001
0.01
0.1
1
10
t [s]
Fig. 7 Transient thermal impedance junction to case
IXYS reserves the right to change limits, test conditions and dimensions.
20170315a
© 2017 IXYS All rights reserved
3-3
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