DSEC 60-03A
HiPerFRED
TM
Epitaxial Diode
with common cathode and soft recovery
I
FAV
= 2x30 A
V
RRM
= 300 V
t
rr
= 30 ns
A
V
RSM
V
300
V
RRM
V
300
Type
A
C
TO-247 AD
A
C
DSEC 60-03A
A
C (TAB)
A = Anode, C = Cathode
Symbol
I
FRMS
I
FAVM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
M
d
Weight
Conditions
T
C
= 145°C; rectangular, d = 0.5
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
T
VJ
= 25°C; non-repetitive
I
AS
= 3 A; L = 180 µH
V
A
= 1.5·V
R
typ.; f = 10 kHz; repetitive
Maximum Ratings
70
30
300
1.2
A
A
w
T
C
= 25°C
mounting torque
typical
-55...+175
175
-55...+150
de
mJ
A
0.3
°C
°C
°C
W
Nm
g
165
0.8...1.2
6
Characteristic Values
typ.
max.
10
1
0.91
1.25
0.9
0.25
30
7
µA
mA
V
V
K/W
K/W
ns
A
I
R
①
V
R
= V
RRM
; T
VJ
= 25°C
T
VJ
= 150°C
fo
Symbol
Conditions
r
ne
R
thJC
R
thCH
t
rr
I
RM
No
I
F
= 1 A; -di/dt = 200 A/µs;
V
R
= 30 V; T
VJ
= 25°C
V
R
= 100 V; I
F
= 50 A; -di
F
/dt = 100 A/µs
T
VJ
= 100°C
t
V
F
②
I
F
= 30 A;
T
VJ
= 150°C
T
VJ
= 25°C
Pulse test:
①
Pulse Width = 5 ms, Duty Cycle < 2.0%
②
Pulse Width = 300 µs, Duty Cycle < 2.0%
Data according to IEC 60747 and per diode unless otherwise specified
Recommended replacement:
DPG 60C300HB
DPG 60C300QB (TO-3P alternative)
20070605a
IXYS reserves the right to change limits, Conditions and dimensions.
© 2007 IXYS All rights reserved
si
A
gn
Features
Applications
Advantages
• International standard package
• Planar passivated chips
• Very short recovery time
• Extremely low switching losses
• Low I
RM
-values
• Soft recovery behaviour
• Epoxy meets UL 94V-0
• Antiparallel diode for high frequency
switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
• Avalanche voltage rated for reliable
operation
• Soft reverse recovery for low EMI/RFI
• Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Dimensions see Outlines.pdf
1-2
DSEC 60-03A
60
A
I
F
40
T
VJ
=150°C
T
VJ
=100°C
T
VJ
= 25°C
20
200
5
0
0.0
0
100
0
10
400
Q
r
800
T
VJ
= 100°C
nC
600
I
F
= 60A
I
F
= 30A
I
F
= 15A
15
V
R
= 150V
I
RM
20
I
F
= 60A
I
F
= 30A
I
F
= 15A
30
A
25
T
VJ
= 100°C
V
R
= 150V
0.5
Fig. 1 Forward current I
F
versus V
F
1.4
90
ns
1.2
K
f
1.0
I
RM
70
t
rr
80
Fig. 2 Reverse recovery charge Q
r
versus -di
F
/dt
T
VJ
= 100°C
V
R
= 150V
si
14
V
V
FR
12
V
FR
t
fr
10
8
0
200
400
gn
i
1
2
3
0.465
0.179
0.256
1.0
V
F
V
1.5
A/μs 1000
-di
F
/dt
0
200
400
600 A/μs 1000
800
-di
F
/dt
Fig. 3 Peak reverse current I
RM
versus -di
F
/dt
T
VJ
= 100°C
I
F
= 30A
1.2
μs
1.0
0.8
0.6
0.4
0.2
0.0
600 A/μs 1000
800
di
F
/dt
t
fr
0.8
Q
r
0.6
60
50
0.4
0
40
80
120 °C 160
T
VJ
40
r
0
ne
200
400
600
-di
F
/dt
800
A/μs 1000
fo
w
de
I
F
= 60A
I
F
= 30A
I
F
= 15A
Fig. 4 Dynamic parameters Q
r
, I
RM
versus T
VJ
1
K/W
0.1
Z
thJC
0.01
Fig. 5 Recovery time t
rr
versus -di
F
/dt
Fig. 6 Peak forward voltage V
FR
and t
fr
versus di
F
/dt
Constants for Z
thJC
calculation:
R
thi
(K/W)
t
i
(s)
0.005
0.0003
0.04
0.001
No
t
DSEP30-03A/DSEC 60-03A
0.0001
0.00001
NOTE: Fig. 2 to Fig. 6 shows typical values
0.0001
0.001
0.01
0.1
t
s
1
Fig. 7 Transient thermal resistance junction to case
20070605a
IXYS reserves the right to change limits, Conditions and dimensions.
© 2007 IXYS All rights reserved
2-2
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