High Speed Operational Amplifier
| 参数名称 | 属性值 |
| 是否Rohs认证 | 不符合 |
| 厂商名称 | National Semiconductor(TI ) |
| 零件包装代码 | DIP |
| 包装说明 | DIP, DIP14,.3 |
| 针数 | 14 |
| Reach Compliance Code | unknow |
| ECCN代码 | EAR99 |
| 放大器类型 | OPERATIONAL AMPLIFIER |
| 架构 | VOLTAGE-FEEDBACK |
| 最大平均偏置电流 (IIB) | 1.5 µA |
| 25C 时的最大偏置电流 (IIB) | 1.5 µA |
| 最小共模抑制比 | 74 dB |
| 标称共模抑制比 | 92 dB |
| 频率补偿 | NO |
| 最大输入失调电压 | 7500 µV |
| JESD-30 代码 | R-GDIP-T14 |
| JESD-609代码 | e0 |
| 长度 | 19.43 mm |
| 低-失调 | NO |
| 负供电电压上限 | -18 V |
| 标称负供电电压 (Vsup) | -15 V |
| 功能数量 | 1 |
| 端子数量 | 14 |
| 最高工作温度 | 70 °C |
| 最低工作温度 | |
| 封装主体材料 | CERAMIC, GLASS-SEALED |
| 封装代码 | DIP |
| 封装等效代码 | DIP14,.3 |
| 封装形状 | RECTANGULAR |
| 封装形式 | IN-LINE |
| 峰值回流温度(摄氏度) | NOT SPECIFIED |
| 电源 | +-15 V |
| 认证状态 | Not Qualified |
| 座面最大高度 | 5.08 mm |
| 最小摆率 | 10 V/us |
| 标称压摆率 | 38 V/us |
| 最大压摆率 | 10 mA |
| 供电电压上限 | 18 V |
| 标称供电电压 (Vsup) | 15 V |
| 表面贴装 | NO |
| 技术 | BIPOLAR |
| 温度等级 | COMMERCIAL |
| 端子面层 | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE |
| 端子节距 | 2.54 mm |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 最小电压增益 | 10000 |
| 宽度 | 7.62 mm |
| LM715CJ | LM715 | LM715CH | LM715MH | LM715MJ | |
|---|---|---|---|---|---|
| 描述 | High Speed Operational Amplifier | High Speed Operational Amplifier | High Speed Operational Amplifier | High Speed Operational Amplifier | High Speed Operational Amplifier |
| 是否Rohs认证 | 不符合 | - | 不符合 | 不符合 | 不符合 |
| 厂商名称 | National Semiconductor(TI ) | - | National Semiconductor(TI ) | National Semiconductor(TI ) | National Semiconductor(TI ) |
| 零件包装代码 | DIP | - | BCY | BCY | DIP |
| 包装说明 | DIP, DIP14,.3 | - | TO-100, CAN10,.23 | TO-100, CAN10,.23 | DIP, DIP14,.3 |
| 针数 | 14 | - | 10 | 10 | 14 |
| Reach Compliance Code | unknow | - | unknown | unknow | unknow |
| ECCN代码 | EAR99 | - | EAR99 | EAR99 | EAR99 |
| 放大器类型 | OPERATIONAL AMPLIFIER | - | OPERATIONAL AMPLIFIER | OPERATIONAL AMPLIFIER | OPERATIONAL AMPLIFIER |
| 架构 | VOLTAGE-FEEDBACK | - | VOLTAGE-FEEDBACK | VOLTAGE-FEEDBACK | VOLTAGE-FEEDBACK |
| 最大平均偏置电流 (IIB) | 1.5 µA | - | 1.5 µA | 0.75 µA | 0.75 µA |
| 25C 时的最大偏置电流 (IIB) | 1.5 µA | - | 1.5 µA | 0.75 µA | 0.75 µA |
| 最小共模抑制比 | 74 dB | - | 74 dB | 74 dB | 74 dB |
| 标称共模抑制比 | 92 dB | - | 92 dB | 92 dB | 92 dB |
| 频率补偿 | NO | - | NO | NO | NO |
| 最大输入失调电压 | 7500 µV | - | 7500 µV | 5000 µV | 5000 µV |
| JESD-30 代码 | R-GDIP-T14 | - | O-MBCY-W10 | O-MBCY-W10 | R-GDIP-T14 |
| JESD-609代码 | e0 | - | e0 | e0 | e0 |
| 低-失调 | NO | - | NO | NO | NO |
| 负供电电压上限 | -18 V | - | -18 V | -18 V | -18 V |
| 标称负供电电压 (Vsup) | -15 V | - | -15 V | -15 V | -15 V |
| 功能数量 | 1 | - | 1 | 1 | 1 |
| 端子数量 | 14 | - | 10 | 10 | 14 |
| 最高工作温度 | 70 °C | - | 70 °C | 125 °C | 125 °C |
| 封装主体材料 | CERAMIC, GLASS-SEALED | - | METAL | METAL | CERAMIC, GLASS-SEALED |
| 封装代码 | DIP | - | TO-100 | TO-100 | DIP |
| 封装等效代码 | DIP14,.3 | - | CAN10,.23 | CAN10,.23 | DIP14,.3 |
| 封装形状 | RECTANGULAR | - | ROUND | ROUND | RECTANGULAR |
| 封装形式 | IN-LINE | - | CYLINDRICAL | CYLINDRICAL | IN-LINE |
| 峰值回流温度(摄氏度) | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 电源 | +-15 V | - | +-15 V | +-15 V | +-15 V |
| 认证状态 | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified |
| 最小摆率 | 10 V/us | - | 10 V/us | 15 V/us | 15 V/us |
| 标称压摆率 | 38 V/us | - | 38 V/us | 38 V/us | 38 V/us |
| 最大压摆率 | 10 mA | - | 10 mA | 7 mA | 7 mA |
| 供电电压上限 | 18 V | - | 18 V | 18 V | 18 V |
| 标称供电电压 (Vsup) | 15 V | - | 15 V | 15 V | 15 V |
| 表面贴装 | NO | - | NO | NO | NO |
| 技术 | BIPOLAR | - | BIPOLAR | BIPOLAR | BIPOLAR |
| 温度等级 | COMMERCIAL | - | COMMERCIAL | MILITARY | MILITARY |
| 端子面层 | Tin/Lead (Sn/Pb) | - | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| 端子形式 | THROUGH-HOLE | - | WIRE | WIRE | THROUGH-HOLE |
| 端子位置 | DUAL | - | BOTTOM | BOTTOM | DUAL |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED | - | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| 最小电压增益 | 10000 | - | 10000 | 15000 | 15000 |
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