High Reliability Series Serial EEPROMs
SPI BUS
BR25□□□□family
BR25S
□□□
Series
●Description
BR25S
□□□
series is a serial EEPROM of SPI BUS interface method.
●Features
1) High speed clock action up to 20MHz (Max.)
2) Wait function by HOLDB terminal
3) Part or whole of memory arrays settable as read only memory area by program
4) 1.7½5.5V single power source action most suitable for battery use
5) Page write mode useful for initial value write at factory shipment
6) Highly reliable connection by Au pad and Au wire
7) For SPI bus interface (CPOL, CPHA) = (0, 0), (1, 1)
8) Auto erase and auto end function at data rewrite
9) Low current consumption
At write action (5V)
: 1.5mA (Typ.)
At read action (5V)
: 1.0mA (Typ.)
At standby action (5V)
: 0.1μA (Typ.)
10) Address auto increment function at read action
11) Write mistake prevention function
Write prohibition at power on
Write prohibition by command code (WRDI)
Write prohibition by WPB pin
Write prohibition block setting by status registers (BP1, BP0)
Write mistake prevention function at low voltage
12) SOP8/SOP-J8/SSOP-B8/TSSOP-B8/MSOP8/TSSOP-B8J/VSON008X2030 Package
13) Data at shipment Memory array: FFh, status register WPEN, BP1, BP0 : 0
14) Data kept for 40 years
15) Data rewrite up to 1,000,000 times
No.10001EBT08
●Page
Write
Page
Part Number
32Byte
BR25S320-W
BR25S640-W
64Byte
BR25S128-W
BR25S256-W
●BR25S
□□□
series
Capacity Bit format
32Kbit
64Kbit
128Kbit
256Kbit
4K×8
8K×8
16K×8
32K×8
Power source
voltage
1.7V½5.5V
1.7V½5.5V
1.7V½5.5V
1.7V½5.5V
SOP8
●
●
●
●
SOP-J8
●
●
●
●
SSOP-B8 TSSOP-B8 MSOP8
●
●
●
●
●
●
●
●
TSSOP-B8J
●
●
VSON008
X2030
●
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
1/18
2010.12 - Rev.B
BR25S
□□□
Series
●Absolute
maximum ratings (Ta=25°C)
Parameter Symbol
Limits
Impressed
Vcc
-0.3½+6.5
voltage
450(SOP8)
450(SOP-J8)
300(SSOP-B8)
Permissible
dissipation
Pd
330(TSSOP-B8)
310(MSOP8)
310(TSSOP-B8J)
300(VSON008X2030)
Storage
temperature
range
Operating
temperature
range
Terminal
voltage
Tstg
-65½+125
Technical Note
●Memory
cell characteristics (Ta=25°C , Vcc=1.7V½5.5V)
Unit
V
*1
*2
*3
*4
*5
*6
*7
Parameter
Number of
data rewrite times
*1
Data hold years
*1
Limits
Min.
1,000,000
40
Min.
－
－
Min.
－
－
Unit
Time
Year
mW
*
1
Not 100% TESTED
●Recommended
action conditions
Parameter
Power source voltage
℃
Input voltage
Symbol
V
CC
V
IN
Limits
1.7½5.5
0½Vcc
Unit
V
●Input
/ output capacity (Ta=25°C, frequency=5MHz)
Topr
－
-40½+85
-0.3½Vcc+0.3
℃
V
Parameter
Input capacity
*1
*1
*1
Symbol Conditions
C
IN
C
OUT
V
IN
=GND
V
OUT
=GND
Min.
－
－
Max.
8
8
Unit
pF
Output capacity
* When using at Ta=25℃ or higher, 4.5mW(*1, *2),
3.0mW(*3, *7),3.3mW(*4), 3.1mW(*5, *6) to be reduced per 1℃
Not 100% TESTED.
●Electrical
characteristics (Unless otherwise specified, Ta=-40½+85°C, Vcc=1.7½5.5V)
Limits
Parameter
Symbol
Unit
Min.
Typ.
Max.
“H” Input Voltage1
“L” Input Voltage1
“L” Output Voltage1
“L” Output Voltage2
“H” Output Voltage1
“H” Output Voltage2
Input Leakage Current
Output Leakage Current
VIH1
VIL1
VOL1
VOL2
VOH1
VOH2
ILI
ILO
ICC1
Operating Current Write
ICC2
ICC3
ICC4
ICC5
ICC6
Operating Current Read
ICC7
ICC8
ICC9
ICC10
Standby Current
ISB
0.7xVcc
-0.3
0
0
Vcc-0.2
Vcc-0.2
-1
-1
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
－
Vcc+0.3
0.3xVcc
0.4
0.2
Vcc
Vcc
1
1
0.5
1
1
1.5
2
3
1
1
1.5
2
2
4
8
2
*1
*2
*1
*2
*1
*2
Conditions
V
V
V
V
V
V
μA
μA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
μA
1.7≦Vcc≦5.5V
1.7≦Vcc≦5.5V
IOL=2.1mA, 2.5≦Vcc<5.5V
IOL=1.0mA, 1.7≦Vcc<2.5V
IOH=-0.4mA, 2.5V≦Vcc<5.5V
IOH=-100µA, 1.7≦Vcc<2.5V
V
IN
=0½Vcc
V
OUT
=0½Vcc, CSB=Vcc
Vcc=1.8V, fSCK=5MHz, tE/W=5ms
Byte Write, Page Write, Write Status register
Vcc=2.5V, fSCK=10MHz, tE/W=5ms
Byte Write, Page Write, Write Status register
Vcc=5.5V, fSCK=20MHz, tE/W=5ms
Byte Write, Page Write, Write Status register
Vcc=1.8V, fSCK=5MHz, SO=OPEN
Read, Read Status Register
Vcc=2.5V, fSCK=2MHz, SO=OPEN
Read, Read Status Register
Vcc=2.5V, fSCK=5MHz, SO=OPEN
Read, Read Status Register
Vcc=2.5V, fSCK=10MHz, SO=OPEN
Read, Read Status Register
Vcc=5.5V, fSCK=5MHz, SO=OPEN
Read, Read Status Register
Vcc=5.5V, fSCK=10MHz, SO=OPEN
Read, Read Status Register
Vcc=5.5V, fSCK=20MHz, SO=OPEN
Read, Read Status Register
Vcc=5.5V, SO=OPEN
CSB=HOLDB=WPB=Vcc, SCK=SI=Vcc or GND
*1 BR25S320/640-W
*2 BR25S128/256-W
○
Radiation resistance design is not made
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
2/18
2010.12 - Rev.B
BR25S
□□□
Series
●Block
diagram
Technical Note
CSB
1
INSTRUCTION DECODE
CONTROL CLOCK
GENERATION
WRITE
VOLTAGE
DETECTION
8 Vcc
HIGH VOLTAGE
GENERATOR
SO
2
INSTRUCTION
REGISTER
INHIBITION
7 HOLDB
STATUS REGISTER
WPB
3
ADDRESS
REGISTER
12½15bit
*
1
ADDRESS
DECODER
12½15bit
*
1
6 SCK
32½256K
EEPROM
*1 12bit: BR25S320-W
13bit: BR25S640-W
14bit: BR25S128-W
15bit: BR25S256-W
DATA
GND
4
REGISTER
8bit
READ/WRITE
AMP
8bit
5 SI
Fig.1 Block diagram
●Operating
timing characteristics (Ta=-40½+85°C, unless otherwise specified, load capacity C
L
=30pF)
1.7≦Vcc<2.5V 1.8≦Vcc<2.5V 2.5≦Vcc<4.5V 4.5≦Vcc<5.5V
Symbol
Unit
Parameter
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
f
SCK
-
-
3
-
-
5
-
-
10
-
-
20 MHz
SCK frequency
t
SCKWH
125
-
-
80
-
-
40
-
-
20
-
-
ns
SCK high time
t
SCKWL
125
-
-
80
-
-
40
-
-
20
-
-
ns
SCK low time
t
CS
250
-
-
90
-
-
40
-
-
20
-
-
ns
CSB high time
t
CSS
100
-
-
60
-
-
30
-
-
15
-
-
ns
CSB setup time
100
-
-
60
-
-
30
-
-
15
-
-
ns
t
CSH
CSB hold time
t
SCKS
100
-
-
50
-
-
20
-
-
15
-
-
ns
SCK setup time
t
SCKH
100
-
-
50
-
-
20
-
-
15
-
-
ns
SCK hold time
t
DIS
30
-
-
20
-
-
10
-
-
5
-
-
ns
SI setup time
t
DIH
50
-
-
20
-
-
10
-
-
5
-
-
ns
SI hold time
t
PD
-
-
125
-
-
80
-
-
40
-
-
20
ns
Data output delay time
t
OH
0
-
-
0
-
-
0
-
-
0
-
-
ns
Output hold time
t
OZ
-
-
200
-
-
80
-
-
40
-
-
20
ns
Output disable time
100
-
-
0
-
-
0
-
-
0
-
-
ns
t
HFS
HOLDB setting setup time
t
HFH
100
-
-
20
-
-
10
-
-
5
-
-
ns
HOLDB setting hold time
t
HRS
100
-
-
0
-
-
0
-
-
0
-
-
ns
HOLDB release setup time
100
-
-
20
-
-
10
-
-
5
-
-
ns
t
HRH
HOLDB release hold time
t
HOZ
-
-
100
-
-
80
-
-
40
-
-
20
ns
Time from HOLDB to output High-Z
t
HPD
-
-
100
-
-
80
-
-
40
-
-
20
ns
Time from HOLDB to output change
*1
t
RC
-
-
1
-
-
1
-
-
1
-
-
1
μs
SCK rise time
*1
t
FC
-
-
1
-
-
1
-
-
1
-
-
1
μs
SCK fall time
*1
t
RO
-
-
100
-
-
50
-
-
40
-
-
20
ns
OUTPUT rise time
*1
t
FO
-
-
100
-
-
50
-
-
40
-
-
20
ns
OUTPUT fall time
Write time
t
E/W
-
-
5
-
-
5
-
-
5
-
-
5
ms
*1 NOT 100% TESTED
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
3/18
2010.12 - Rev.B
BR25S
□□□
Series
●Pin
assignment and description
Vcc
HOLDB
SCK
SI
Technical Note
Terminal
name
Vcc
GND
CSB
SCK
SI
SO
Input
/Output
-
-
Input
Input
Input
Output
Input
Function
Power source to be connected
All input / output reference voltage, 0V
Chip select input
Serial clock input
Start bit, ope code, address, and serial data input
Serial data output
Hold input
Command communications may be suspended temporarily
(HOLD status)
Write protect input
Write command is prohibited
Write status register command is prohibited
BR25S320-W
BR25S640-W
BR25S128-W
BR25S256-W
CSB
SO
WPB
GND
HOLDB
Fig.2 Pin assignment diagram
WPB
Input
●Sync
data input / output timing
tCS
tCSS
tCS
CSB
tSCKS
tSCKWL
tSCKWH
tRC
tFC
CSB
SCK
tCSH tSCKH
SCK
tDIS tDIH
SI
SI
SO
High-Z
tPD
tOH
tRO,tFO
tOZ
High-Z
SO
Fig.3 Input timing
SI is taken into IC inside in sync with data rise edge of
SCK. Input address and data from the most significant bit
MSB
"H"
Fig.4
Input / Output timing
SO is output in sync with data fall edge of SCK. Data is
output from the most significant bit MSB.
CSB
"L"
tHFS
tHFH
tHRS tHRH
SCK
tDIS
SI
n+1
tHOZ
tHPD
High-Z
Dn+1
Dn
n
n-1
SO
Dn
Dn-1
HOLDB
Fig.5
HOLD timing
●AC
timing characteristics conditions
Parameter
Load capacity
Input rise time
Input fall time
Input voltage
Input / Output judgment voltage
Symbol
C
L
-
-
-
-
Limits
Min.
-
-
-
Typ.
-
-
-
0.2Vcc/0.8Vcc
0.3Vcc/0.7Vcc
Max.
30
50
50
Unit
pF
ns
ns
V
V
●Characteristic
data (The following characteristic data are Typ. Values.)
6
5
4
VIH[V]
3
2
1
0
0
1
2
3
Vcc[V]
4
5
6
6
1
Ta=-40℃
Ta=25℃
Ta=85℃
5
SPEC
VIL[V]
Ta=-40℃
Ta=25℃
Ta=85℃
VOL1[V]
0.8
0.6
Ta=-40℃
Ta=25℃
Ta=85℃
4
3
2
1
0
0
1
2
3
Vcc[V]
4
5
6
SPEC
0.4
SPEC
0.2
0
0
1
2
3
IOL[mA]
4
5
6
Fig.6
"H" input voltage
VIH(CSB,SCK,SI,HOLDB,WPB) Fig.7
"L"
input voltage VIL(CSB,SCK,SI,HOLDB,WPB)
Fig.8 "L" output voltage VOL1 (Vcc=2.5V)
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
4/18
2010.12 - Rev.B
BR25S
□□□
Series
●Characteristic
data (The following characteristic data are Typ. Values.)
Technical Note
2.6
1.5
1.5
2.5
VOH1[V]
ILI[μA]
1
SPEC
1
ILO[μA]
SPEC
2.4
0.5
Ta=-40℃
Ta=25℃
Ta=85℃
0.5
Ta=-40℃
Ta=25℃
Ta=85℃
SPEC
2.3
Ta=-40℃
Ta=25℃
Ta=85℃
0
0
2.2
0
0.4
IOH[mA]
0.8
1.2
-0.5
0
1
2
3
Vcc[V]
4
5
6
-0.5
0
1
2
3
VOUT[V]
4
5
6
Fig.9 "H" output voltage VOH1 (Vcc=2.5V)
4
Fig.10 Input leak current ILI(CSB,SCK,SI,HOLDB,WPB)
4
10
Fig.11 Output leak current ILO(SO)
DATA=00h
3
ICC3[mA]
DATA=00h
SPEC
3
ICC10[mA]
8
6
4
2
0
DATA=00h
SPEC
2
SPEC
ICC3[mA]
Ta=-40℃
Ta=25℃
Ta=85℃
2
Ta=-40℃
Ta=25℃
Ta=85℃
Ta=-40℃
Ta=25℃
Ta=85℃
1
1
0
3
4
5
6
Vcc[V]
Fig.12 Current consumption at WRITE operation ICC3
(BR25S320/640-W)
5
4
3
ISB[μA]
2
1
0
-1
0
1
2
3
Vcc[V]
4
5
6
0
0
1
2
0
1
2
3
Vcc[V]
4
5
6
0
1
2
3
Vcc[V]
4
5
6
Fig.13 Current Consumption at WRITE operation ICC3
(BR25S128/256-W)
1000
Fig.14 Current Consumption at READ operation ICC10
140
tSCKWH [ns]
SPEC
fSCK[MHz]
Ta=-40℃
Ta=25℃
Ta=85℃
Ta=-40℃
Ta=25℃
Ta=85℃
100
SPEC
120
100
80
60
Ta=-40℃
Ta=25℃
Ta=85℃
SPEC
SPEC
10
SPEC
SPEC
SPEC
SPEC
40
SPEC
20
0
0
1
2
3
Vcc[V]
4
5
6
1
0
1
2
3
Vcc[V]
4
5
6
Fig.15 Current Consumption at standby operation ISB
140
Fig.16 SCK frequency fSCK
300
120
Fig.17 SCK high time tSCKWH
SPEC
120
100
tSCKWL [ns]
80
60
Ta=-40℃
Ta=25℃
Ta=85℃
tCS[ns]
250
200
150
100
SPEC
Ta=-40℃
Ta=25℃
Ta=85℃
tCSS[ns]
100
80
SPEC
Ta=-40℃
Ta=25℃
Ta=85℃
SPEC
SPEC
60
40
SPEC
40
SPEC
SPEC
50
0
0
1
2
3
Vcc[V]
4
5
6
SPEC
SPEC
SPEC
20
0
SPEC
20
0
0
1
2
3
Vcc[V]
4
5
6
0
1
2
3
Vcc[V]
4
5
6
Fig.18 SCK low time tSCKWL
Fig.19 CSB high time tCS
Fig.20 CSB setup time tCSS
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
5/18
2010.12 - Rev.B
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
