BFP360W
NPN Silicon RF Transistor
Preliminary data
Low voltage/ low current operation
For low noise amplifiers
For Oscillators up to 3.5 GHz and Pout > 10 dBm
Low noise figure: 1.0 dB at 1.8 GHz
3
4
Junction temperature
Ambient temperature
Storage temperature
Thermal Resistance
Parameter
1
T
is measured on the collector lead at the soldering point to the pcb
S
2For calculation of
R
please refer to Application Note Thermal Resistance
thJA
1
Junction - soldering point
2)
2
1
VPS05605
ESD
:
E
lectro
s
tatic
d
ischarge sensitive device, observe handling precaution!
Type
BFP360W
Maximum Ratings
Parameter
Marking
Pin Configuration
FBs
1=E 2=C 3=E 4=B -
Symbol
V
CEO
V
CES
V
CBO
V
EBO
I
C
I
B
P
tot
T
j
T
A
T
stg
Symbol
R
thJS
Package
-
SOT343
Value
Unit
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation
1)
T
S
6
15
15
2
35
4
210
150
-65 ... 150
-65 ... 150
Value
V
mA
mW
°C
95°C
Unit
260
K/W
Jun-16-2003
BFP360W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
DC Characteristics
typ.
max.
Unit
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
V
(BR)CEO
I
CES
I
CBO
I
EBO
h
FE
6
-
-
-
60
9
-
-
-
130
-
10
100
1
200
V
µA
nA
µA
-
Collector-emitter cutoff current
V
CE
= 15 V,
V
BE
= 0
Collector-base cutoff current
V
CB
= 5 V,
I
E
= 0
Emitter-base cutoff current
V
EB
= 1 V,
I
C
= 0
DC current gain
I
C
= 15 mA,
V
CE
= 3 V
2
Jun-16-2003
BFP360W
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
min.
typ. max.
AC Characteristics
(verified by random sampling)
Transition frequency
f
T
I
C
= 15 mA,
V
CE
= 3 V,
f
= 1 GHz
Collector-base capacitance
V
CB
= 5 V,
f
= 1 MHz, emitter grounded
C
cb
C
ce
C
eb
F
min
Unit
11
-
-
-
-
14
0.3
0.28
0.47
1
-
0.5
-
-
-
GHz
pF
Collector emitter capacitance
V
CE
= 5 V,
f
= 1 MHz, base grounded
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz, collector grounded
Noise figure
I
C
= 3 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
f
= 1.8 GHz
dB
Power gain, maximum stable
1)
I
C
= 15 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 1.8 GHz
G
ms
-
17.5
-
dB
Power gain, maximum available
1)
I
C
= 15 mA,
V
CE
= 3 V,
Z
S
=
Z
Sopt
,
Z
L
=
Z
Lopt
,
f
= 3 GHz
G
ma
-
12
-
dB
Transducer gain
|
S
21e
|
2
,
-
,
-
IP
3
dB
14
9.5
24
-
-
-
dBm
Third order intercept point at output
2)
V
CE
= 3 V,
I
C
= 15 mA,
f
= 1.8 GHz,
Z
S
=
Z
L
= 50
1dB Compression point at output
I
C
= 15 mA,
V
CE
= 3 V,
Z
S
=
Z
L
= 50 ,
f
= 1.8 GHz
1
G
= |S
1/2
ms
21e
/S
12e
|,
G
ma
= |S
21e
/
S
12e
| (k-(k²-1) )
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50
I
C
= 15 mA,
V
CE
= 3 V,
Z
S
=
Z
L
= 50
f
= 3 GHz
I
C
= 15 mA,
V
CE
= 3 V,
Z
S
=
Z
L
= 50
f
= 1.8 GHz
-
P
-1dB
-
9
-
from 0.1 MHz to 6 GHz
3
Jun-16-2003
BFP360W
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transitor Chip Data:
fF
ps
mA
V
ns
-
-
-
-
deg
-
fF
-
-
-
V
fF
-
V
eV
K
1
All parameters are ready to use, no scalling is necessary.
Package Equivalent Circuit:
L
BI
=
L
BO
=
L
EI
=
L
EO
=
L
CI
=
L
CO
=
C
BE
=
C
CB
=
C
CE
=
0.43
0.47
0.26
0.12
0.06
0.36
68
46
232
nH
nH
nH
nH
nH
nH
fF
fF
fF
Valid up to 6GHz
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http//www.infineon.com/silicondiscretes
4
Jun-16-2003
m
V
IS =
VAF =
NE =
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
MJS =
XTI =
AF =
0.0689
20
2.4
60
1.4
7.31
400
9.219
1.336
0.864
1.92
0
0
fA
V
-
V
-
BF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
XTB =
FC =
KF =
147
77.28
6
0.3
0.1
78.2
1.3
0.115
0
0.486
0
0
0.954
1E-14
-
mA
-
A
NF =
ISE =
NR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
NK =
1
150
1
20
74
0.35
0.5
0.198
473
0.129
0.75
1.11
0.5
-
fA
-
fA
µA
FPGA/CPLD
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